ChipFind - документация

Электронный компонент: HL6504FM

Скачать:  PDF   ZIP
HL6504FM
Visible High Power Laser Diode for DVD-RAM
ADE-208-825 (Z)
1st Edition
Nov. 1999
Description
The HL6504FM is a 0.66
m band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure.
It is suitable as a light source for large capacity optical disc memories, such as DVD-RAM, and various
other types of optical equipment.
Hermetic sealing of the small package (
5.6 mm) assures high reliability.
Application
Optical disc memories
Optical equipment
Features
High output power
: 50 mW (CW)
Visible light output :
p = 664 nm Typ
Small package
:
5.6 mm
Low astigmatism
: 5
m Typ (P
O
= 5 mW)
Internal Circuit
LD
1
3
Internal Circuit
Package Type
HL6504FM: FM
2
HL6504FM
2
Absolute Maximum Ratings (T
C
= 25
C)
Item
Symbol
Value
Unit
Optical output power
P
O
50
mW
Pulse optical output power
P
O
(pulse)
70 *
mW
Laser diode reverse voltage
V
R(LD)
2
V
Operating temperature
Topr
-
10 to +60
C
Storage temperature
Tstg
-
40 to +85
C
Note:
Pulse condition : Pulse width = 100 ns, duty = 50%
Optical and Electrical Characteristics (T
C
= 25
C)
Items
Symbol
Min
Typ
Max
Unit
Test Conditions
Optical output power
P
O
50
--
--
mW
Kink free *
Pulse optical output power
P
O
(pulse)
70
--
--
mW
Kink free *
Threshold current
Ith
30
45
60
mA
--
Operating current
Iop
--
115
135
mA
P
O
= 50 mW
Operating voltage
V
OP
2.1
2.6
3.0
V
P
O
= 50 mW
Beam divergence parallel
to the junction
//
7
8.5
11
deg.
P
O
= 50 mW
Beam divergence parpendicular
to the junction
18
21
26
deg.
P
O
= 50 mW
Asitgmatism
A
S
--
5
--
m
P
O
= 5 mW, NA = 0.55
Lasing wavelength
p
655
664
667
nm
P
O
= 50 mW
Note:
Kink free is confirmed at the temperature of 25
C.
HL6504FM
3
Typical Characteristic Curves
0
200
160
120
80
40
50
40
30
Optical output power, P
O
(mW)
20
10
0
Forward current, I
F
(mA)
Optical Output Power vs.
Forward Current
Slope efficiency,
S
(mW/mA)
Case temperature, T
C
(
C)
Slope Efficiency vs.
Case Temperature
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
60
70
80
T
C
= 60
C
T
C
= 25
C
T
C
= 0
C
Threshold current, Ith (mA)
Case temprerature, T
C
(
C)
Threshold Current vs.
Case Temperature
80
70
60
50
40
30
20
10
0
100
10
30
50
0
200
160
120
80
40
80
60
40
Optical output power, P
O
(mW)
20
0
Forward current, I
F
(mA)
Pulse Optical Output Power vs.
Forward Current
T
C
= 60
C
T
C
= 25
C
T
C
= 0
C
T
C
= 25
C
pw = 100ns
duty = 50%
HL6504FM
4
Lasing Wavelength,
P
(nm)
Case temperature, T
C
(
C)
Wavelength vs.
Case Temperature
655
665
660
Relative intensity
Wavelength,
p (nm)
Lasing Spectrum
T
C
= 25
C
0
10
20
30
40
50
60
70
80
675
670
665
660
655
650
P
O
= 50mW
P
O
= 50mW
P
O
= 35mW
P
O
= 10mW
P
O
= 5mW
Relative intensity
Angle,
(deg)
Far Field Pattern
-
40
-
10
0
10
20
30
-
20
-
30
40
1.0
0.8
0.6
0.4
0.2
0
P
O
= 50mW
T
C
= 25
C
Astigmatism, A
S
(
m)
Oputical output power, P
O
(mW)
Astigmatism vs.
Optical Output Power
0
50
40
30
20
10
10
6
4
2
0
T
C
= 25
C
NA = 0.55
8
Perpendicular
Parallel
HL6504FM
5
Gain (dB)
Frequency (Hz)
Frequency Response
1M
100M
3G
10M
3dB/div
1G
0
1
100
80
60
Survival rate (%)
40
20
0
Applied voltage (kV)
Electrostatic Destruction (MIL standard)
Forward
N = 5pcs
Iop
10%
2
3
P
O
= 3mW