185
HL7859MG
Visible High Power Laser Diode
Description
The HL7859MG is a 0.78
m band GaAlAs laser diode with a multi-quantum well (MQW)structure.
It is suitable as a light source for optical disc memories and various other types of optical equipment.
Hermetic sealing of the small package (
5.6 mm) assures high reliability.
Application
Optical disc memories.
Features
High output power
: 35 mW (CW)
Visible light output
:
p = 775 to 795 nm
Small package
:
5.6 mm dia.
Low astigmatism
: 5
m Typ (P
O
= 5 mW)
HL7859MG
186
Absolute Maximum Ratings (T
C
= 25C)
Item
Symbol
Value
Unit
Optical output power
P
O
35
mW
Pulse optical output power
P
O
(pulse)
42 *
mW
Laser diode reverse voltage
V
R(LD)
2
V
Photo diode reverse voltage
V
R(PD)
30
V
Operating temperature
Topr
10 to +60
C
Storage temperature
Tstg
40 to +85
C
Note:
Pulse condition : Pulse width = 1
s, duty = 50%
Optical and Electrical Characteristics (T
C
= 25C)
Items
Symbols Min
Typ
Max
Units
Test Conditions
Optical output power
P
O
35
--
--
mW
Kink free *
Threshold current
Ith
--
35
60
mA
--
Operating voltage
V
OP
--
2.1
2.5
V
P
O
= 35 mW
Slope efficiency
s
0.35
0.65
0.80
mW/mA 21 (mW) / (I
(28 mW)
I
(7 mW)
)
Lasing wavelength
p
775
785
795
nm
P
O
= 35 mW
Beam divergence parallel
to the junction
//
8
9.5
12
deg.
P
O
= 35 mW
Beam divergence
parpendicular to the junction
18
23
28
deg.
P
O
= 35 mW
Monitor current
Is
0.2
--
2
mA
P
O
= 35 mW, V
R(PD)
= 5 V
Asitgmatism
A
S
--
5
--
m
P
O
= 5 mW, NA = 0.4
Note:
Kink free is confirmed at the temperature of 25C.
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