HM5116100 Series
16 M FP DRAM (16-Mword
1-bit)
4 k Refresh
ADE-203-646E (Z)
Rev. 5.0
Nov. 1997
Description
The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word
1-bit. It employs the
most advanced 0.5
m CMOS technology for high performance and low power. The HM5116100 offers
Fast Page Mode as a high speed access mode. It is packaged in 26-pin plastic SOJ.
Features
Single 5 V (
10%)
Access time: 60 ns/70 ns (max)
Power dissipation
Active mode: 440 mW/385 mW (max)
Standby mode 11 mW (max)
Fast page mode capability
Refresh cycles
4096 refresh cycles : 64 ms
3 variations of refresh
RAS-only refresh
CAS-before-RAS refresh
Hidden refresh
Test function
16-bit parallel test mode
Ordering Information
Type No.
Access time
Package
HM5116100S-6
HM5116100S-7
60 ns
70 ns
300-mil 26-pin plastic SOJ (CP-26/24DB)
HM5116100 Series
4
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
SS
V
T
1.0 to +7.0
V
Supply voltage relative to V
SS
V
CC
1.0 to +7.0
V
Short circuit output current
Iout
50
mA
Power dissipation
P
T
1.0
W
Operating temperature
Topr
0 to +70
C
Storage temperature
Tstg
55 to +125
C
Recommended DC Operating Conditions (Ta = 0 to +70
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
CC
4.5
5.0
5.5
V
1
Input high voltage
V
IH
2.4
--
6.5
V
1
Input low voltage
V
IL
1.0
--
0.8
V
1
Note:
1. All voltage referred to V
SS
HM5116100 Series
5
DC Characteristics (Ta = 0 to +70
C, V
CC
= 5 V
10%, V
SS
= 0 V)
HM5116100
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Unit
Test conditions
Operating current
*1, *2
I
CC1
--
80
--
70
mA
t
RC
= min
Standby current
I
CC2
--
2
--
2
mA
TTL interface
RAS
,
CAS
= V
IH
Dout = High-Z
--
1
--
1
mA
CMOS interface
RAS
,
CAS
V
CC
0.2V
Dout = High-Z
RAS
-only refresh current
*2
I
CC3
--
80
--
70
mA
t
RC
= min
Standby current
*1
I
CC5
--
5
--
5
mA
RAS
= V
IH
,
CAS
= V
IL
Dout = enable
CAS
-before-
RAS
refresh current
I
CC6
--
80
--
70
mA
t
RC
= min
Fast page mode current
*1, *3
I
CC7
--
70
--
60
mA
t
PC
= min
Input leakage current
I
LI
10
10
10
10
A
0 V
Vin
7 V
Output leakage current
I
LO
10
10
10
10
A
0 V
Vout
7 V
Dout = disable
Output high voltage
V
OH
2.4
V
CC
2.4
V
CC
V
High Iout = 5 mA
Output low voltage
V
OL
0
0.4
0
0.4
V
Low Iout = 4.2 mA
Notes: 1. I
CC
depends on output load condition when the device is selected. I
CC
max is specified at the
output open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Address can be changed once or less while
CAS
= V
IH
.
Capacitance (Ta = 25
C, V
CC
= 5 V
10%)
Parameter
Symbol
Typ
Max
Unit
Notes
Input capacitance (Address, Data-in)
C
I1
--
5
pF
1
Input capacitance (Clocks)
C
I2
--
7
pF
1
Output capacitance (Data-out)
C
O
--
7
pF
1, 2
Notes: 1. Capacitance measured with Booton Meter or effective capacitance measuring method.
2.
CAS
= V
IH
to disable Dout.
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