ChipFind - документация

Электронный компонент: HM621400HCLJP-10

Скачать:  PDF   ZIP
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest
Hitachi's Sales Dept. regarding specification.
HM621400HC Series
4M High Speed SRAM (4-Mword
1-bit)
ADE-203-1199 (Z)
Preliminary
Rev. 0.0
Nov. 30, 2000
Description
The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword
1-bit. It has realized high speed
access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing
technology. It is most appropriate for the application which requires high speed and high density memory,
such as cache and buffer memory in system. The HM621400HC is packaged in 400-mil 32-pin SOJ for high
density surface mounting.
Features
Single 5.0 V supply: 5.0 V 10 %
Access time: 10 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 140 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
Data retension current: 0.8 mA (max) (L-version)
Data retension voltage: 2 V (min) (L-version)
Center V
CC
and V
SS
type pinout
HM621400HC Series
2
Ordering Information
Type No.
Access time
Package
HM621400HCJP-10
10 ns
400-mil 32-pin plastic SOJ (CP-32DB)
HM621400HCLJP-10
10 ns
HM621400HC Series
3
Pin Arrangement
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A0
A1
A2
A3
A4
A5
CS
V
CC
V
SS
Din
WE
A6
A7
A8
A9
A10
A21
A20
A19
A18
A17
A16
OE
V
SS
V
CC
Dout
A15
A14
A13
A12
A11
NC
(Top view)
32-pin SOJ
Pin Description
Pin name
Function
A0 to A21
Address input
Din
Data input
Dout
Data output
CS
Chip select
OE
Output enable
WE
Write enable
V
CC
Power supply
V
SS
Ground
NC
No connection
HM621400HC Series
4
Block Diagram
V
CC
V
SS
1024-row
256-column
16-block
1-bit
(4,194,304 bits)
Internal
voltage
generater
Row
decoder
Column I/O
Column decoder
Din
CS
WE
Dout
(LSB)
(MSB)
CS
OE
CS
(LSB)
CS
(MSB)
A13
A6
A15
A14
A7
A8
A12
A11
A3
A1
A9A10A21A19
A18
A20A17A16A5 A0 A2 A4
HM621400HC Series
5
Operation Table
CS
OE
WE
Mode
V
CC
current
Dout
Ref. cycle
H
Standby
I
SB
, I
SB1
High-Z
--
L
H
H
Output disable
I
CC
High-Z
--
L
L
H
Read
I
CC
Dout
Read cycle (1) to (3)
L
H
L
Write
I
CC
High-Z
Write cycle (1)
L
L
L
Write
I
CC
High-Z
Write cycle (2)
Note:
: H or L
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
V
CC
0.5 to +7.0
V
Voltage on any pin relative to V
SS
V
T
0.5*
1
to V
CC
+0.5*
2
V
Power dissipation
P
T
1.0
W
Operating temperature
Topr
0 to +70
C
Storage temperature
Tstg
55 to +125
C
Storage temperature under bias
Tbias
10 to +85
C
Notes: 1. V
T
(min) = 2.0 V for pulse width (under shoot) 6 ns.
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot) 6 ns.
Recommended DC Operating Conditions (Ta = 0 to +70C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
*
3
4.5
5.0
5.5
V
V
SS
*
4
0
0
0
V
Input voltage
V
IH
2.2
--
V
CC
+ 0.5*
2
V
V
IL
0.5*
1
--
0.8
V
Notes: 1. V
IL
(min) = 2.0 V for pulse width (under shoot) 6 ns.
2. V
IH
(max) = V
CC
+ 2.0 V for pulse width (over shoot) 6 ns.
3. The supply voltage with all V
CC
pins must be on the same level.
4. The supply voltage with all V
SS
pins must be on the same level.