HM62V16258B Series
4 M SRAM (256-kword
16-bit)
ADE-203-975B (Z)
Rev. 2.0
Oct. 14, 1999
Description
The Hitachi HM62V16258B Series is 4-Mbit static RAM organized 262,144-word
16-bit. HM62V16258B
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. It offers low power standby power dissipation; therefore, it is suitable for battery backup
systems. It is packaged in standard 44-pin plastic TSOPII.
Features
Single 3.0 V supply: 2.7 V to 3.6 V
Fast access time: 70 ns/85 ns (max)
Power dissipation:
Active: 9 mW (typ)
Standby: 3 W (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Battery backup operation.
HM62V16258B Series
2
Ordering Information
Type No.
Access time
Package
HM62V16258BLTT-7
HM62V16258BLTT-8
70 ns
85 ns
400-mil 44-pin plastic TSOPII (normal-bend type) (TTP-44DB)
HM62V16258BLTT-7SL
HM62V16258BLTT-8SL
70 ns
85 ns
HM62V16258B Series
5
Operation Table
CS
WE
OE
UB
LB
I/O0 to I/O7
I/O8 to I/O15
Operation
H
High-Z
High-Z
Standby
H
H
High-Z
High-Z
Standby
L
H
L
L
L
Dout
Dout
Read
L
H
L
H
L
Dout
High-Z
Lower byte read
L
H
L
L
H
High-Z
Dout
Upper byte read
L
L
L
L
Din
Din
Write
L
L
H
L
Din
High-Z
Lower byte write
L
L
L
H
High-Z
Din
Upper byte write
L
H
H
High-Z
High-Z
Output disable
Note: H:
V
IH
, L: V
IL
,
: V
IH
or V
IL
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V
SS
V
CC
0.5 to + 4.6
V
Terminal voltage on any pin relative to V
SS
V
T
0.5*
1
to V
CC
+ 0.3*
2
V
Power dissipation
P
T
1.0
W
Storage temperature range
Tstg
55 to +125
C
Storage temperature range under bias
Tbias
10 to +85
C
Notes: 1. V
T
min: 3.0 V for pulse half-width
30 ns.
2. Maximum voltage is +4.6 V.
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
CC
2.7
3.0
3.6
V
V
SS
0
0
0
V
Input high voltage
V
IH
2.0
--
V
CC
+ 0.3
V
Input low voltage
V
IL
0.3
--
0.6
V
1
Ambient temperature range
Ta
0
--
70
C
Note:
1. V
IL
min: 3.0 V for pulse half-width
30 ns.