HRF503A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-401B(Z)
Rev 2
Features
Low forward voltage drop and suitable for high effifiency rectifying.
DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HRF503A
503A
DO-214
Outline
1
2
1. Cathode
2. Anode
Cathode mark
Mark
503A
HRF503A
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Value
Unit
Repetitive peak reverse
voltage
V
RRM
*1
35
V
Average rectified current
I
o
*1
5
A
Non-Repetitive peak
forward surge current
I
FSM
*2
100
A
Junction temperature
Tj
125
C
Storage temperature
Tstg
40 to +125
C
Notes: 1. See from Fig.4 to Fig.7
2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F1
--
0.38
--
V
I
F
= 3A
V
F2
--
--
0.45
I
F
= 5A
Reverse current
I
R
--
--
1.0
mA
V
R
= 35V
Thermal resistance
Rth(j-a)
--
75
--
C/W
Glass epoxy board
*1
Rth(j-c)
--
35
--
Tc = 25
C
Note:
1. Glass epoxy board
6.8
Unit: mm
2.0
3.5
Land size
HRF503A
4
Main Characteristic
75
100
25
50
0
125
6
5
4
3
0
5
4
3
2
1
6
5
4
3
0
2
10
8
6
4
2
40
30
20
10
0
0
DC
Sin
D=1/2
D=1/3
D=1/6
t
T
0A
D=
T
t
Sin
t
T
0V
D=
T
t
DC
D=1/3
D=1/6
DC
Sin
D=1/6
1
0
Tj =25C
Tj =125C
12
D=1/2
D=2/3
D=5/6
2
1
-25
D=1/2
Sin
6
5
4
3
0
2
1
75
100
25
50
0
125
-25
D=1/2
D=1/3
VR=15V
Tj =125C
VR=15V
Tj =125C
Glass epoxy PCB
Case temperature
Tc (C)
Average forward current I
O
(A)
Fig.6 Average forward current Vs. Case temperature
Ambient temperature
Ta (C)
Average forward current I
O
(A)
Fig.7 Average forward current Vs. Ambient temperature
Forward current I F (A)
Fig.5 Reverse power dissipation Vs. Reverse voltage
Forward power dissipation P
d
(W)
Fig.4 Forward p ower dissipation Vs. Forward current
Reverse voltage V
R
(V)
Reverse power dissipation P
d
(W)
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