HTT1213E
Rev.0, Aug. 2001, page 2 of 4
Absolute Maximum Ratings
(Ta = 25
C)
Ratings
Item
Symbol
Q1 and Q2
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
4
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
Total 200*
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
55 to
+
150
C
*Value on PCB. (FR4(13 x 13 x 0.635 mm))
Electrical Characteristics (Q1 and Q2)
(Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
V
I
C
= 10
A, I
E
= 0
Collector cutoff current
I
CBO
0.1
mA
V
CB
= 15 V, I
E
= 0
Collector cutoff current
I
CEO
1
mA
V
CE
= 4 V, R
BE
= infinite
Emitter cutoff current
I
EBO
0.2
mA
V
EB
= 0.8 V, I
C
= 0
DC current transfer ratio
h
FE
100
130
170
V
CE
= 1 V, I
C
= 5 mA
Reverse transfer capacitance C
re
0.30
0.45
pF
V
CB
= 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
f
T
10
12
GHz
V
CE
= 1 V, I
C
= 5 mA, f = 1 GHz
Forward transfer coefficient
|S
21
|
2
13
16
dB
Noise figure
NF
1.0
2.0
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz,
S
=
L
= 50
HTT1213E
Rev.0, Aug. 2001, page 4 of 4
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