2SK1773
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
1
2
3
TO-3P
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
2SK1773
2
Absolute Maximum Ratings (Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
1000
V
Gate to source voltage
V
GSS
30
V
Drain current
I
D
5
A
Drain peak current
I
D(pulse)
*
1
15
A
Body to drain diode reverse drain current
I
DR
5
A
Channel dissipation
P
ch
*
2
100
W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes
1. PW
10
s, duty cycle
1 %
2. Value at Tc = 25
C
2SK1773
3
Electrical Characteristics (Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
1000
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
30
--
--
V
I
G
=
100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
--
10
A
V
GS
=
25 V, V
DS
= 0
Zero gate voltage drain current I
DSS
--
--
250
A
V
DS
= 800 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
2.0
--
3.0
V
I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state
resistance
R
DS(on)
--
1.5
2.0
I
D
= 3 A
V
GS
= 10 V*
1
Forward transfer admittance
|y
fs
|
3.2
5.0
--
S
I
D
= 3 A
V
DS
= 20 V*
1
Input capacitance
Ciss
--
1700
--
pF
V
DS
= 10 V
Output capacitance
Coss
--
700
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
315
--
pF
f = 1 MHz
Turn-on delay time
t
d(on)
--
25
--
ns
I
D
= 3 A
Rise time
t
r
--
110
--
ns
V
GS
= 10 V
Turn-off delay time
t
d(off)
--
210
--
ns
R
L
= 10
Fall time
t
f
--
135
--
ns
Body to drain diode forward
voltage
V
DF
--
0.85
--
V
I
F
= 5 A, V
GS
= 0
Body to drain diode reverse
recovery time
t
rr
--
1050
--
ns
I
F
= 5 A, V
GS
= 0,
di
F
/ dt = 100 A /
s
Note
1. Pulse Test
2SK1773
4
160
120
80
40
0
Channel Dissipation Pch (W)
50
100
150
200
Case Temperature Tc (C)
Power vs. Temperature Derating
50
30
10
3
1
0.3
0.1
0.05
10
30
100
300
1000
3000
10000
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
1 ms
PW = 10 ms (1 shot)
DC Operation (Tc = 25C)
10 s
100 s
Operationm in this area
is limited by R (on)
DS
Ta = 25C
Maximum Safe Operation Area
10
8
6
4
2
0
10
20
30
40
50
Drain Current I (A)
D
Drain to Source Voltage V (V)
DS
10 V
8 V
5.5 V
Pulse Test
5 V
4 V
V = 3.5 V
GS
Typical Output Characteristics
5
4
3
2
1
0
2
4
6
8
10
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Tc = 75C
25C
25C
V = 10 V
Pulse Test
DS
Typical Transfer Characteristics
2SK1773
5
20
16
12
0
8
4
4
8
12
16
20
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage
V (on) (V)
DS
Pulse Test
5 A
2 A
I = 1 A
D
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
20
10
5
2
1
0.5
0.2
0.5
1
2
5
10
20
Drain Current I (A)
D
Static DrainSource on State
Resistance R (on) ( )
DS
Pulse Test
V = 10 V
GS
Static Drain to Source on State
Resistance vs. Drain Current
10
8
6
4
2
0
40
0
40
80
120
160
Case Temperature T (C)
C
Static DrainSource on State
Resistance R (on) ( )
DS
Pulse Test
V = 10 V
2 A
1 A
I = 5 A
D
GS
Static Drain to Source on State
Resistance vs. Temperature
10
5
2
1
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1
2
5
Forward Transfer Admittance
|y | (S)
Drain Current I (A)
D
Tc = 25C
25C
75C
V = 10 V
Pulse Test
DS
fs
Forward Transfer Admittance
vs. Drain Current
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