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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC233G8
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6.0 GHz
v00.0504
General Description
Features
Functional Diagram
The HMC233G8 is a broadband high isolation
non-refl ective GaAs MESFET SPDT switch in a
hermetic surface mount package. Covering DC to
6.0 GHz, the switch features >44 dB isolation up
to 2 GHz and >31 dB isolation up to 6.0 GHz. The
switch operates using complementary negative
control voltage logic lines of -5/0V and requires
no bias supply.
Isolation: 44 dB @ 2.0 GHz
31 dB @ 6.0 GHz
Insertion Loss: 1.5 dB Typical @ 4.0 GHz
Non-Refl ective Design
Hermetic Surface Mount Package
Electrical Specifi cations,
T
A
= +25 C, With 0/-5V Control, 50 Ohm System
Typical Applications
The HMC233G8 is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military Radios, Radar & ECM
Space Systems
Test Instrumentation
Parameter
Frequency
Min.
Typ.
Max.
Units
Insertion Loss
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
1.3
1.5
1.8
1.6
1.8
2.2
dB
dB
dB
Isolation
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
39
30
26
44
35
31
dB
dB
dB
Return Loss
"On State"
DC - 5.0 GHz
DC - 6.0 GHz
17
14
dB
dB
Return Loss RF1, RF2
"Off State"
DC - 4.0 GHz
DC - 6.0 GHz
12
8
dB
dB
Input Power for 1 dB Compression
0.5 - 6.0 GHz
22
27
dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
0.5 - 6.0 GHz
46
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 6.0 GHz
3
6
ns
ns
MICROWAVE CORPORATION
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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14
SWITCHES - SMT
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
Input Third Order Intercept Point
Return Loss
0.1 and 1 dB Input Compression Point
Insertion Loss
Isolation
HMC233G8
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6.0 GHz
v00.0504
-5
-4
-3
-2
-1
0
0
1
2
3
4
5
6
7
+25C
+85C
-40C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
RF1
RF2
Output to Output
ISOLATION (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
1
2
3
4
5
6
7
RFC
RF1, RF2 ON
RF1, RF2 OFF
RETURN LOSS (dB)
FREQUENCY (GHz)
15
20
25
30
35
0
1
2
3
4
5
6
7
1 dB Compression Point
0.1 dB Compression Point
INPUT COMPRESSION (dBm)
FREQUENCY (GHz)
30
35
40
45
50
55
60
0
1
2
3
4
5
6
7
+ 25C
+ 85C
- 40C
INPUT IP3 (dBm)
FREQUENCY (GHz)
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SWITCHES - SMT
14
Truth Table
Absolute Maximum Ratings
Control Voltages
Outline Drawing
Control Input
Signal Path State
A
B
RFC to RF1
RFC to RF2
High
Low
ON
OFF
Low
High
OFF
ON
State
Bias Condition
Low
0 to -0.2V @ 10 uA Max.
High
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
RF Input Power (Vctl= -5V)
(0.5 - 6 GHz)
+30 dBm (@ +85 C)
Control Voltage Range (A & B)
+1.0V to -7.5 Vdc
Hot Switch Power Level
+27 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 4 mW/C above 85 C)
0.25 W
Thermal Resistance
(Insertion Loss Path)
148 C/W
Thermal Resistance
(Terminated Path)
260 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
Caution: Do not "Hot Switch" power levels greater
than +27 dBm (Vctl = 0/-5 Vdc).
HMC233G8
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6.0 GHz
v00.0504
NOTES:
1. PACKAGE MATERIAL: ALUMINA LOADED BOROSILICATE GLASS.
2. LEADS, BASE, COVER MATERIAL: KOVARTM (#7052 CORNING).
3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER
ELECTROLYTIC NICKEL 50 MICROINCHES MIN.
4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. TOLERANCES: .005 [0.13] UNLESS OTHERWISE SPECIFIED.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
Pin Descriptions
Suggested Driver Circuit
Pin Number
Function
Description
Interface Schematic
1, 3
A, B
See truth table and control voltage table.
2, 5, 8
RFC, RF1, RF2
These pins are DC coupled and matched to 50 Ohm. Blocking
capacitors are required if RF line potential is not equal to 0V.
4, 6, 7
GND
Package bottom must also
be connected to PCB RF ground.
HMC233G8
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6.0 GHz
v00.0504
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
SWITCHES - SMT
14
HMC233G8
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6.0 GHz
v00.0504
Evaluation PCB
The circuit board used in the fi nal application should be
generated with proper RF circuit design techniques. Signal
lines at the RF port should have 50 ohm impedance and
the package ground leads and package bottom should be
connected directly to the ground plane similar to that shown
above. The evaluation circuit board shown above is avail-
able from Hittite Microwave Corporation upon request.
List of Materials for Evaluation PCB 107183*
Item
Description
J1 - J3
PC Mount SMA RF Connector
J4 - J6
DC Pin
R1, R2
100 Ohm Resistor, 0603 Pkg.
U1
HMC233G8 SPDT Switch
PCB**
107100 Evaluation PCB
** Circuit Board Material: Rogers 4350
* Reference this number when ordering complete evaluation PCB.
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
14
SWITCHES - SMT
HMC233G8
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6.0 GHz
v00.0504
Notes:
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