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MICROWAVE CORPORATION
8 - 188
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC415LP3
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v02.0604
General Description
Features
Functional Diagram
The HMC415LP3 is a high effi ciency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifi er which operates between
4.9 and 5.9 GHz. The amplifi er is packaged in a
low cost, leadless surface mount package with
an exposed base for improved RF and thermal
performance. With a minimum of external compo-
nents, the amplifi er provides 20 dB of gain, +26
dBm of saturated power, and 34% PAE from a
+3.0V supply voltage. Vpd can be used for full
power down or RF output power/current control.
For +15 dBm OFDM output power (64 QAM, 54
Mbps), the HMC415LP3 achieves an error vector
magnitude (EVM) of 3.7% meeting 802.11a lin-
earity requirements.
Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal
Supply Voltage: +3.0 V
Power Down Capability
Low External Part Count
Electrical Specifi cations,
T
A
= +25 C, Vs = 3V, Vpd = 3V
Typical Applications
This amplifi er is ideal for use as a power
amplifi er for 4.9 - 5.9 GHz applications:
802.11a WLAN
HiperLAN WLAN
Access Points
UNII & ISM Radios
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
4.9 - 5.1
5.1 - 5.4
5.4 - 5.9
GHz
Gain
18
20
18.5
20.5
16
19
dB
Gain Variation Over Temperature
0.04
0.05
0.04
0.05
0.04
0.05
dB / C
Input Return Loss
10
9
8
dB
Output Return Loss
10
12
8
dB
Output Power for 1dB Compression (P1dB)
Icq = 285 mA
Icq = 200 mA
20
22.5
22.0
20.5
23.0
22.5
18
21.5
21.0
dBm
Saturated Output Power (Psat)
25.5
26
24
dBm
Output Third Order Intercept (IP3)
28
31
29
32
27
30
dBm
Error Vector Magnitude
(54 Mbps OFDM Signal @ +15 dBm Pout)
Icq = 200 mA
3.7
%
Noise Figure
6
6
6
dB
Supply Current (Icq)
Vpd = 0V/3V
0.002 /
285
0.002 /
285
0.002 /
285
mA
Control Current (Ipd)
Vpd = 3V
7
7
7
mA
Switching Speed
tOn, tOff
45
45
45
ns
MICROWAVE CORPORATION
8 - 189
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
-25
-20
-15
-10
-5
0
5
10
15
20
25
3
4
5
6
7
8
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
24
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC415LP3
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v02.0604
Broadband Gain & Return Loss
Gain vs. Temperature
10
12
14
16
18
20
22
24
26
28
30
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
MICROWAVE CORPORATION
8 - 190
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
0
4
8
12
16
20
24
28
32
36
-12 -10
-8
-6
-4
-2
0
2
4
6
8
10
12
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
22
24
26
28
30
32
34
36
38
40
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
Power Compression @ 5.2 GHz
Output IP3 vs. Temperature
HMC415LP3
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v02.0604
0
1
2
3
4
5
6
7
8
9
10
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage
-50
-40
-30
-20
-10
0
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
-50
-40
-30
-20
-10
0
4.8
5
5.2
5.4
5.6
5.8
6
+25 C
+85 C
-40 C
ISOLATION (dB)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Power Down Isolation vs. Temperature
18
19
20
21
22
23
24
25
26
27
28
2.7
3
3.3
Gain
P1dB
Psat
Gain (dB), P1dB (dBm), Psat (dBm)
Vcc Supply Voltage (Vdc)
MICROWAVE CORPORATION
8 - 191
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC415LP3
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v02.0604
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
30
50
70
90
110
130
150
170
190
210
230
250
270
290
310
330
1.5
1.75
2
2.25
2.5
2.75
3
Gain
P1dB
Psat
Icc
GAIN (dB), P1dB (dBm), Psat (dBm)
Icc (mA)
Vpd (Vdc)
Gain, Power & Quiescent Supply Current
vs. Vpd @ 5.2 GHz
0
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
17
18
+25 C
+85 C
-40 C
ERROR VECTOR MAGNITUDE (%)
OUTPUT POWER (dBm)
EVM vs. Temperature,
Icc = 240 mA, F = 5.2 GHz
0
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
17
18
Icc=160mA
Icc=200mA
Icc=240mA
Icc=280mA
ERROR VECTOR MAGNITUDE (%)
OUTPUT POWER (dBm)
EVM vs. Supply Current,
F = 5.2 GHz
MICROWAVE CORPORATION
8 - 192
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - SMT
8
HMC415LP3
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
v02.0604
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND
PATTERN.
Collector Bias Voltage (Vcc)
+5.0 Vdc
Control Voltage (Vpd)
+3.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +3.0 Vdc)
+20 dBm
Junction Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 17 mW/C above 85 C)
1.105 W
Thermal Resistance
(junction to ground paddle)
59 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
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