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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
v00.1104
General Description
Features
Functional Diagram
The HMC441LC3B is an effi cient GaAs PHEMT
MMIC Medium Power Amplifi
er housed in
a leadless "Pb free" RoHS compliant SMT
package. Operating between 6.0 and 18.0 GHz,
the amplifi er provides 17 dB of gain, +22 dBm
of saturated power and 27% PAE from a +5.0 V
supply voltage. This 50 Ohm matched amplifi er
does not require any external components,
making it an ideal linear gain block or driver for
HMC SMT mixers. The HMC441LC3B allows the
use of surface mount manufacturing techniques.
Gain: 17 dB
Saturated Power: +22 dBm @ 27% PAE
Single Supply Voltage: +5.0 V
50 Ohm Matched Input/Output
RoHS Compliant 3 x 3 mm SMT package
Electrical Specifi cations,
T
A
= +25 C, Vdd = +5V
Typical Applications
The HMC441LC3B is ideal for use as a medium
power amplifi er for:
Point-to-Point Radios
Point-to-Multi-Point Radios & VSAT
LO Driver for HMC Mixers
Military EW & ECM
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
6.0 - 8.5
8.5 - 12.5
12.5 - 14.0
14.0 - 18.0
GHz
Gain
10
14
13
17
14
17
10
14
dB
Gain Variation Over Temperature
0.015
0.02
0.015
0.02
0.015
0.02
0.015
0.02
dB/ C
Input Return Loss
10
13
20
13
dB
Output Return Loss
12
15
17
14
dB
Output Power for 1 dB Compression (P1dB)
16
19
17
20
17
20
17
20
dBm
Saturated Output Power (Psat)
20
21.5
22.5
21.5
dBm
Output Third Order Intercept (IP3)
30
32
32
32
dBm
Noise Figure
4.5
4.5
4.5
4.5
dB
Supply Current (Idd)
95
95
95
95
mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
-25
-20
-15
-10
-5
0
5
10
15
20
4
6
8
10
12
14
16
18
20
S21
S11
S22
Response (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
6
7
8
9
10
11
12
13
14
15
16
17
18
+25C
+85C
-40C
GAIN
(dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
6
7
8
9
10
11
12
13
14
15
16
17
18
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
6
7
8
9
10
11
12
13
14
15
16
17
18
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC441LC3B
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
v00.1104
Broadband Gain & Return Loss
Gain vs. Temperature
15
16
17
18
19
20
21
22
23
24
25
6
7
8
9
10
11
12
13
14
15
16
17
18
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
23
24
25
6
7
8
9
10
11
12
13
14
15
16
17
18
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
P1dB vs. Temperature
Psat vs. Temperature
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
v00.1104
0
5
10
15
20
25
30
-10
-8
-6
-4
-2
0
2
4
6
8
10
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
22
24
26
28
30
32
34
36
6
7
8
9
10
11
12
13
14
15
16
17
18
+25C
+85C
-40C
OIP3 (dBm)
FREQUENCY (GHz)
Power Compression @ 11 GHz
Output IP3 vs. Temperature
0
1
2
3
4
5
6
7
8
9
10
6
7
8
9
10
11
12
13
14
15
16
17
18
+25C
+85C
-40C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
Noise Figure vs. Temperature
Gain, Power & OIP3
vs. Supply Voltage @ 11 GHz
-60
-50
-40
-30
-20
-10
0
6
7
8
9
10
11
12
13
14
15
16
17
18
+25C
+85C
-40C
ISOLATION (dBm)
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
14
16
18
20
22
24
26
28
30
32
34
4.5
5
5.5
Gain
P1dB
Psat
OIP3
GAIN
(dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vdd Supply Voltage (Vdd)
0
5
10
15
20
25
30
-10
-8
-6
-4
-2
0
2
4
6
8
10
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
Power Compression @ 15 GHz
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
v00.1104
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+6.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+20 dBm
Channel Temperature
150 C
Continuous Pdiss (T = 85 C)
(derate 10 mW/C above 85 C)
0.65 W
Thermal Resistance
(channel to ground paddle)
100 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-40 to +85 C
ESD Sensitivity (HBM)
Class 1A
Vdd (V)
Idd (mA)
+5.5
96
+5.0
95
+4.5
94
Note: Amplifi er will operate over full voltage range shown above
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: COLD FLASH OVER Ni.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
Typical Supply Current vs. Vdd
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
v00.1104
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 3, 7, 8
GND
Package bottom must also be connected to RF/DC ground
2
RFIN
This pin is AC coupled and matched to 50 Ohms from
6 - 18 GHz.
4 - 6,
10 - 12
N/C
This pin may be connected to RF/DC ground.
Performance will not be affected.
8
RFOUT
This pin is AC coupled and matched to 50 Ohms from
6 -18 GHz.
11
Vdd
Power Supply Voltage for the amplifi er. External bypass
capacitors are required.
Component
Value
C1
100 pF
C2
1,000 pF
C3
2.2 F
Application Circuit
8
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC441LC3B
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6 - 18 GHz
v00.1104
Evaluation PCB
The circuit board used in the fi nal application should
use RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
suffi cient number of VIA holes should be used to con-
nect the top and bottom ground planes. The evaluation
board should be mounted to an appropriate heat sink.
The evaluation circuit board shown is available from
Hittite upon request.
List of Material for Evaluation PCB 109712*
Item
Description
J1 - J2
PC Mount SMA Connector
J3 - J4
DC Pin
C1
100 pF Capacitor, 0402 Pkg.
C2
1000 pF Capacitor, 0603 Pkg.
C3
2.2 F Capacitor, Tantalum
U1
HMC441LC3B Amplifi er
PCB*
109710 Evaluation PCB, 10 mils
** Circuit Board Material: Rogers 4350
** Reference this number when ordering complete evaluation PCB
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