MICROWAVE CORPORATION
1 - 84
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC460
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
v02.0704
General Description
Features
Functional Diagram
The HMC460 is a GaAs MMIC PHEMT Low Noise
Distributed Amplifi er die which operates between
DC and 20 GHz. The amplifi er provides 14 dB of
gain, 2.5 dB noise fi gure and +16 dBm of output
power at 1 dB gain compression while requiring
only 60 mA from a +8V supply. The HMC460
amplifi er can easily be integrated into Multi-Chip-
Modules (MCMs) due to its small size. All data is
with the chip in a 50 Ohm test fi xture connected via
0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils).
Noise Figure: 2.5 dB @ 10 GHz
Gain: 14 dB @ 10 GHz
P1dB Output Power: +16 dBm @ 10 GHz
Supply Voltage: +8.0V @ 60 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
Typical Applications
The HMC460 is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Electrical Specifi cations,
T
A
= +25 C, Vdd= 8V, Idd= 60 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
DC - 6.0
6.0 - 18.0
18.0 - 20.0
GHz
Gain
12
14
12
14
11
13
dB
Gain Flatness
0.5
0.15
0.25
dB
Gain Variation Over Temperature
0.008
0.016
0.01
0.02
0.01
0.02
dB/ C
Noise Figure
4.0
5.0
2.5
3.5
3.0
4.0
dB
Input Return Loss
17
22
15
dB
Output Return Loss
17
15
15
dB
Output Power for 1 dB Compression (P1dB)
14
17
13
16
12
15
dBm
Saturated Output Power (Psat)
18
18
17
dBm
Output Third Order Intercept (IP3)
27.5
28
27
dBm
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.9V Typ.)
60
60
60
mA
* Adjust Vgg between -2 to 0V to achieve Idd= 60 mA typical.
MICROWAVE CORPORATION
1 - 85
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC460
Output Return Loss vs. Temperature
v02.0704
Broadband Gain & Return Loss
Gain vs. Temperature
Low Frequency Gain & Return Loss
Input Return Loss vs. Temperature
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
Noise Figure vs. Temperature
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
GAIN
(dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0
2
4
6
8
10
12
14
16
18
20
22
24
26
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
0.00001
0.0001
0.001
0.01
0.1
1
10
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & Noise Figure
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+ 85C
-55 C
PSAT (dBm)
FREQUENCY (GHz)
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
OUTPUT IP3 (dBm)
FREQUENCY (GHz)
8
9
10
11
12
13
14
15
16
17
18
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
7.5
7.75
8
8.25
8.5
NOISE FIGURE
GAIN
P1dB
GAIN (dB), P1dB (dBm)
NOI
SE FI
GURE (dB)
Vdd (Vdc)
Reverse Isolation vs. Temperature
-70
-60
-50
-40
-30
-20
-10
0
0
2
4
6
8
10
12
14
16
18
20
22
+25 C
+85 C
-55 C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
Outline Drawing
Absolute Maximum Ratings
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +8.0 Vdc)
+23 dBm
Channel Temperature
175 C
Continuous Pdiss (T = 85 C)
(derate 24 mW/C above 85 C)
2.17 W
Thermal Resistance
(channel to die bottom)
41.5 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vdd (V)
Idd (mA)
+7.5
59
+8.0
60
+8.5
62
Typical Supply Current vs. Vdd
MICROWAVE CORPORATION
1 - 88
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC460
v02.0704
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20.0 GHz
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pad is DC coupled and matched to 50 Ohms
from DC - 20.0 GHz
2
Vdd
Power supply voltage for the amplifi er.
External bypass capacitors are required
3
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit herein.
4
RFOUT
This pad is DC coupled and matched to 50 Ohms
from DC - 20.0 GHz
5
ACG2
Low frequency termination. Attach bypass capacitor per
application circuit herein.
6
Vgg
Gate control for amplifi er. Adjust to achieve Idd= 60 mA.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
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