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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC464
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
v02.0704
General Description
Features
Functional Diagram
The HMC464 is a GaAs MMIC PHEMT Distributed
Power Amplifi er die which operates between 2 and
20 GHz. The amplifi er provides 16 dB of gain, +30
dBm Output IP3 and +26 dBm of output power
at 1 dB gain compression while requiring 290 mA
from a +8V supply. Gain fl atness is excellent from
2 - 18 GHz making the HMC464 ideal for EW,
ECM and radar driver amplifi er applications. The
HMC464 amplifi er I/O's are internally matched to
50 Ohms facilitating easy integration into Multi-
Chip-Modules (MCMs). All data is with the chip
in a 50 Ohm test fi xture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
+26 dBm P1dB Output Power
Gain: 16 dB
+30 dBm Output IP3
Supply Voltage: +8.0V @ 290 mA
50 Ohm Matched Input/Output
3.12 mm x 1.63 mm x 0.1 mm
Typical Applications
The HMC464 wideband driver is ideal for:
Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics
Electrical Specifi cations,
T
A
= +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
2.0 - 6.0
6.0 - 18.0
18.0 - 20.0
GHz
Gain
14
16
13
16
11
14
dB
Gain Flatness
0.25
0.5
0.75
dB
Gain Variation Over Temperature
0.02
0.03
0.02
0.03
0.03
0.04
dB/ C
Input Return Loss
15
17
13
dB
Output Return Loss
14
12
11
dB
Output Power for 1 dB Compression (P1dB)
23.5
26.5
22
26
19
22
dBm
Saturated Output Power (Psat)
28
27.5
24.5
dBm
Output Third Order Intercept (IP3)
32
30
24
dBm
Noise Figure
4.0
4.0
6.0
dB
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.5V Typ.)
290
290
290
mA
* Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical.
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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AMPLIFIERS - CHIP
1
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC464
Output Return Loss vs. Temperature
v02.0704
Gain & Return Loss
Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
Noise Figure vs. Temperature
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0
2
4
6
8
10
12
14
16
18
20
22
24
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
GAIN
(dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC464
v02.0704
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
P1dB vs. Temperature
Psat vs. Temperature
Output IP3 vs. Temperature
Gain, Power & OIP3
vs. Supply Voltage @ 10 GHz, Fixed Vgg
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)
(Vdd -8.0) Vdc to Vdd
RF Input Power (RFin)(Vdd = +8.0 Vdc)
+23 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 51.5 mW/C above 85 C)
4.64 W
Thermal Resistance
(channel to die bottom)
19.4 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vdd (V)
Idd (mA)
+7.5
292
+8.0
290
+8.5
288
Typical Supply Current vs. Vdd
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
Psat (dBm)
FREQUENCY (GHz)
16
18
20
22
24
26
28
30
32
34
36
0
2
4
6
8
10
12
14
16
18
20
22
+25C
+85C
-55C
OIP3 (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
32
7.5
8
8.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm),
Psat (dBm), OIP3 (dBm)
Vdd SUPPLY VOLTAGE (Vdc)
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
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AMPLIFIERS - CHIP
1
HMC464
v02.0704
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
Pad Number
Function
Description
Interface Schematic
1
RFIN
This pad is AC coupled and matched to 50 Ohms
from 2.0 - 20.0 GHz
2
Vgg2
Gate Control 2 for amplifi er. +3V should be applied to
Vgg2 for nominal operation.
3
RFOUT & Vdd
RF output for amplifi er. Connect the DC
bias (Vdd) network to provide drain current (Idd).
See application circuit herein.
4
Vgg1
Gate Control 1 for amplifi er. Adjust between -2 to 0V
to achieve Idd= 290 mA.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Pad Descriptions
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC464
v02.0704
GaAs PHEMT MMIC
POWER AMPLIFIER, 2.0 - 20.0 GHz
Assembly Diagram
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
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