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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
v00.0903
General Description
Features
Functional Diagram
The HMC499 is a high dynamic range GaAs
PHEMT MMIC Medium Power Amplifi er which
operates between 21 and 32 GHz. The HMC499
provides 16 dB of gain, and an output power of
+24 dBm at 1 dB compression from a +5.0 V
supply voltage. The HMC499 amplifi er can easily
be integrated into Multi-Chip-Modules (MCMs)
due to its small size. All data is with the chip in
a 50 Ohm test fi xture connected via 0.025mm
(1 mil) diameter wire bonds of minimal length
0.31mm (12 mils).
+33 dBm Output IP3
+24 dBm P1dB
Gain: 16 dB
Supply Voltage: +5.0 V
50 Ohm Matched Input/Output
2.11 mm x 1.46 mm x 0.1 mm
Electrical Specifi cations,
T
A
= +25 C, Vdd = 5V, Idd = 200 mA*
Typical Applications
The HMC499 is ideal for use as a power
amplifi er for:
Point-to-Point Radios
Point-to-Multi-Point Radios
VSAT
Military & Space
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range
21.0 - 24.0
24.0 - 28.0
28.0 - 32.0
GHz
Gain
13
16
12.5
15.5
12
15
dB
Gain Variation Over Temperature
0.03
0.04
0.03
0.04
0.03
0.04
dB/ C
Input Return Loss
10
5
8
dB
Output Return Loss
13
12
12
dB
Output Power for 1 dB Compression (P1dB)
20
23
20
24
21
24.5
dBm
Saturated Output Power (Psat)
24
24.5
25
dBm
Output Third Order Intercept (IP3)
30
33
33.5
dBm
Noise Figure
6.5
5.0
4.5
dB
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
200
200
200
mA
* Adjust Vgg between -2 to 0V to achieve Idd = 200 mA typical.
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz
HMC499
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
v00.0903
Broadband Gain & Return Loss
Gain vs. Temperature
P1dB vs. Temperature
Psat vs. Temperature
-20
-15
-10
-5
0
5
10
15
20
18
20
22
24
26
28
30
32
34
36
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
18
20
22
20
21
22
23
24
25
26
27
28
29
30
31
32
33
+25 C
+85 C
-55 C
GAIN
(dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
20
21
22
23
24
25
26
27
28
29
30
31
32
33
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
20
21
22
23
24
25
26
27
28
29
30
31
32
33
+25 C
+85 C
-55 C
RETURN LOSS (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
20
21
22
23
24
25
26
27
28
29
30
31
32
33
+25 C
+85 C
-55 C
P1dB (dBm)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
20
21
22
23
24
25
26
27
28
29
30
31
32
33
+25 C
+85 C
-55 C
Psat (dBm)
FREQUENCY (GHz)
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
v00.0903
Power Compression @ 22 GHz
Output IP3 vs. Temperature
Noise Figure vs. Temperature
Gain & Power vs. Supply Voltage@ 30 GHz,
Idd= 200 mA
Reverse Isolation vs. Temperature
Power Compression @ 30 GHz
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
22
24
26
28
30
32
34
36
38
40
20
21
22
23
24
25
26
27
28
29
30
31
32
33
+25 C
+85 C
-55 C
OIP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
11
12
20
21
22
23
24
25
26
27
28
29
30
31
32
33
+25 C
+85 C
-55 C
NOI
SE FI
GURE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
3
3.5
4
4.5
5
5.5
Gain
P1dB
Psat
GAIN (dB), P1dB (d
Bm), Psat (dBm)
Vdd Supply Voltage (Vdc)
-60
-50
-40
-30
-20
-10
0
20
21
22
23
24
25
26
27
28
29
30
31
32
33
+25 C
+85 C
-55 C
ISOLATION (dB)
FREQUENCY (GHz)
MICROWAVE CORPORATION
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
v00.0903
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
+5.5 Vdc
Gate Bias Voltage (Vgg)
-4.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc)
+20 dBm
Channel Temperature
175 C
Continuous Pdiss (T= 85 C)
(derate 25 mW/C above 85 C)
2.25 W
Thermal Resistance
(channel to die bottom)
40 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 C
Vdd (Vdc)
Idd (mA)
+4.5
193
+5.0
200
+5.5
207
+3.0
191
+3.5
200
+4.0
208
Typical Supply Current vs. Vdd
Note: Amplifi er will operate over full voltage ranges shown above. Vgg
adjusted to achieve Idd= 200 mA at +5.0V and +3.5V.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND IS .004" SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
MICROWAVE CORPORATION
1 - 124
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
AMPLIFIERS - CHIP
1
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
v00.0903
Pad Descriptions
Pin Number
Function
Description
Interface Schematic
1
RF IN
This pad is AC coupled and matched to 50 Ohms from
21 - 32 GHz.
2-4
Vdd1, 2, 3
Power Supply Voltage for the amplifi er. External bypass
capacitors of 100 pF and 0.01
F are required.
5
RF OUT
This pad is AC coupled and matched to 50 Ohms from
21 - 32 GHz.
6
Vgg
Gate control for amplifi er. Adjust to achieve Idd of 200 mA.
Please follow "MMIC Amplifi er Biasing Procedure"
Application Note. External bypass capacitors of 100 pF
and 0.01
F are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
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