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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC525
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
v00.1104
General Description
Features
Typical Applications
The HMC525 is a compact I /Q MMIC mixer which
can be used as either an Image Reject Mixer or a
Single Sideband Upconverter. The chip utilizes two
standard Hittite double balanced mixer cells and a
90 degree hybrid fabricated in a GaAs MESFET
process. All data shown below is taken with the chip
mounted in a 50 Ohm test fi xture and includes the
effects of 1 mil diameter x 20 mil length bond wires
on each port. A low frequency quadrature hybrid
was used to produce a 100 MHz USB IF output.
This product is a much smaller alternative to hybrid
style Image Reject Mixers and Single Sideband
Upconverter assemblies.
Electrical Specifi cations,
T
A
= +25 C, IF= 100 MHz, LO = +15 dBm*
* Unless otherwise noted, all measurements performed as downconverter.
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
Frequency Range, RF/LO
4.0 - 8.5
5.5 - 7.5
GHz
Frequency Range, IF
DC - 3.5
DC - 3.5
GHz
Conversion Loss (As IRM)
7.5
10
7.5
9.5
dB
Image Rejection
20
35
30
40
dB
1 dB Compression (Input)
+14
+15
dBm
LO to RF Isolation
33
45
40
50
dB
LO to IF Isolation
17
20
17
20
dB
IP3 (Input)
+23
+23
dBm
Amplitude Balance
0.3
0.2
dB
Phase Balance
8
4
Deg
Functional Diagram
The HMC525 is ideal for:
Point-to-Point and Point-to-Multi-Point Radio
VSAT
Wide IF Bandwidth: DC - 3.5 GHz
Image Rejection: 40 dB
LO to RF Isolation: 50 dB
High Input IP3: +23 dBm
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
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Order On-line at www.hittite.com
HMC525
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
v00.1104
Conversion Gain vs. Temperature
Image Rejection vs. Temperature
Conversion Gain vs. LO Drive
Return Loss
Data taken As IRM With External IF Hybrid
-20
-15
-10
-5
0
3
4
5
6
7
8
9
+25C
+85C
-55C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
0
10
20
30
40
50
60
3
4
5
6
7
8
9
+25C
+85C
-55C
I
M
AGE REJECTI
ON (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
3
4
5
6
7
8
9
+11 dBm
+13 dBm
+15 dBm
+17 dBm
+19 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
3
4
5
6
7
8
9
RF
LO
RETURN LOSS (dB)
FREQUENCY (GHz)
6
8
10
12
14
16
18
20
3
4
5
6
7
8
9
+25C
+85C
-55C
P1dB (dBm)
RF FREQUENCY (GHz)
5
10
15
20
25
30
3
4
5
6
7
8
9
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
IP3 (dBm)
RF FREQUENCY (GHz)
Input P1dB vs. Temperature
Input IP3 vs. LO Drive
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HMC525
Isolations
Amplitude Balance vs. LO Drive
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
v00.1104
IF Bandwidth*
Phase Balance vs. LO Drive
Quadrature Channel Data Taken Without IF Hybrid
-70
-60
-50
-40
-30
-20
-10
3
4
5
6
7
8
9
ISOLATION (dB)
RF FREQUENCY (GHz)
LO/IF1
LO/IF2
LO/RF
RF/IF1
RF/IF2
-25
-20
-15
-10
-5
0
0.5
1
1.5
2
2.5
3
3.5
RETURN LOSS
CONVERSION GAIN
RESPONSE (dB)
IF FREQUENCY (GHz)
-2
-1
0
1
2
3
4
5
6
7
8
9
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
AMPLITUDE BALANCE (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
5
10
3
4
5
6
7
8
9
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
PHASE BALANCE (degrees)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
3
4
5
6
7
8
9
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
3
4
5
6
7
8
9
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
SI
DEBAND REJECTI
ON (dBc)
RF FREQUENCY (GHz)
Upconverter Performance Conversion
Gain vs. LO Drive
Upconverter Performance Sideband
Rejection vs. LO Drive
* Conversion gain data taken with external IF hybrid
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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC525
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
v00.1104
Harmonics of LO
LO Freq. (GHz)
nLO Spur at RF Port
1
2
3
4
3.5
40
40
54
50
4.5
43
45
58
53
5.5
51
57
48
67
6.5
59
63
64
56
7.5
48
66
64
62
8.5
44
65
60
67
LO = +15 dBm
Values in dBc below input LO level measured at RF Port.
MxN Spurious Outputs
nLO
mRF
0
1
2
3
4
0
xx
-11
32
23
51
1
32
0
42
51
66
2
89
62
74
65
89
3
89
89
89
82
89
4
89
89
89
89
89
RF = 5.6 GHz @ -10 dBm
LO = 5.5 GHz @ +15 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
+20 dBm
LO Drive
+27 dBm
Channel Temperature
150C
Continuous Pdiss (T=85C)
(derate 9.7 mW/C above 85C)
631 mW
Thermal Resistance (R
TH
)
(junction to die bottom)
103 C/W
Storage Temperature
-65 to +150 C
Operating Temperature
-55 to +85 deg C
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004"
3. TYPICAL BOND PAD IS .004" SQUARE
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE .002"
Die Packaging Information
[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the "Packaging Information" section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC525
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
v00.1104
Pad
Number
Function
Description
Interface Schematic
1
RF
RF Port. This pad is AC coupled and matched to
50 Ohms from 4 to 8.5 GHz.
4
LO
LO Port. This pad is AC coupled and matched to
50 Ohms from 4 to 8.5 GHz.
2 (5)
IF2
IF Port. This pad is DC coupled. For applications not requir-
ing operation to DC, this port should be DC blocked exter-
nally using a series capacitor whose value has been chosen
to pass the necessary IF frequency range. For operation to
DC, this pad must not source/sink more than 3mA of current
or die non-function and possible die failure will result. Pads
5 and 6 are alternate IF ports.
3 (6)
IF1
GND
The backside of the die must be connected
to RF/DC ground.
Pad Descriptions
Assembly Diagrams
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Order On-line at www.hittite.com
HMC525
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
v00.1104
Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order
to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3
mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffl e or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to
clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or
with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges
and should not be touched with vacuum collet, tweezers, or fi ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and
fl at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature
of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip
to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
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