HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 1/5
H01N60I, H01N60J
HSMC Product Specification
H01N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
1A, 600V, R
DS(on)
=8
@V
GS
=10V
Low Gate Charge 15nC(Typ.)
Low C
rss
4pF(Typ.)
Fast Switching
Improved d
v
/d
t
Capability
Absolute Maximum Ratings
Symbol
Parameter
H01N60I / H01N60J
Units
V
DSS
Drain-Source Voltage
600
V
Drain Current (Continuous T
C
=25
o
C)
1
A
I
D
Drain Current (Continuous T
C
=100
o
C)
0.6
A
I
DM
Drain Current (Pulsed)
*1
4
A
V
GS
Gate-Source Voltage
30
V
E
AS
Single Pulse Avalanche Energy
(L=59mH, I
AS
=1.1A, V
DD
=50V, R
G
=25
, Starting T
J
=25C)
50
mJ
I
AR
Avalanche Current
*1
1
A
E
AR
Repetitive Avalanche Energy
2.8
mJ
dv/dt
Peak Diode Recovery dv/dt
*2
4.5
V/nS
V
GS
Gate-to-Source Voltage (Continue)
20
V
Total Power Dissipation (T
A
=25
o
C)
2.5
W
Total Power Dissipation (T
C
=25
o
C)
28
W
P
D
Derate above 25
C
0.22
W/
C
T
j
, T
stg
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum Lead Temperature for Soldering Purposes, 1/8"
from case for 5 seconds
300
C
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
*2: I
SD
1.1A, di/dt
200A/us, V
DD
BV
DSS
, Starting TJ=25
o
C
H01N60 Series Pin Assignment
1
2
3
Tab
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1
2
3
Tab
H01N60 Series
Symbol:
G
D
S
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 2/5
H01N60I, H01N60J
HSMC Product Specification
Thermal Characteristics
Symbol
Parameter
Value
Units
R
JC
Thermal Resistance Junction to Case Max.
4.5
C/W
R
JA
Thermal Resistance Junction to Ambient Max.
110
C/W
ELectrical Characteristics
(T
J
=25
C, unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
Off Characteristics
V
DSS
Drain-Source Breakdown Voltage (V
GS
=0V, I
D
=250uA)
600
-
-
V
BV
DSS
/
T
J
Breakdown Voltage Temperature Coefficient (I
D
=250uA, Referenced
to 25
o
C)
-
0.6
-
V/
o
C
Zero Gate Voltage Drain Current (V
DS
=600V, V
GS
=0V)
-
-
1
uA
I
DSS
Zero Gate Voltage Drain Current (V
DS
=480V, T
j
=125
C)
-
-
50
uA
I
GSSF
Gate-Body Leakage Current-Forward (V
GS
=30V, V
DS
=0V)
-
-
100
nA
I
GSSR
Gate-Body Leakage Current-Reverse (V
GS
=-30V, V
DS
=0V)
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage (V
DS
=V
GS
, I
D
=250uA)
2
-
4
V
R
DS(on)
Static Drain-Source On-Resistance (V
GS
=10V, I
D
=0.6A)
*3
-
-
8
g
FS
Forward Transconductance (V
DS
=40V, I
D
=0.5A)
*3
-
0.75
-
S
Dynamic Characteristics
C
iss
Input Capacitance
-
210
250
C
oss
Output Capacitance
-
19
25
C
rss
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
-
4
8
pF
Switching Characteristics
t
d(on)
Turn-on Delay Time
-
-
30
t
r
Turn-on Rise Time
-
-
60
t
d(off)
Turn-off Delay Time
-
-
45
t
f
Turn-off Fall Time
V
DD
=300V, I
D
=1.1A
R
G
=25
*3
-
-
75
ns
Q
g
Total Gate Charge
-
15
20
Q
gs
Gate-Source Charge
-
4
-
Q
gd
Gate-Drain Charge
V
DS
=480V, I
D
=1.1A
V
GS
=10V
*3
-
3
-
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
-
-
1
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
-
-
4
A
V
SD
Drain-Source Diode Forward Voltage (V
GS
=0V, I
S
=1A)
-
-
1.4
V
t
rr
Reverse Recovery Time (V
GS
=0V, I
S
=1.1A, dl
F
/dt=100A/us)
*3
-
190
-
ns
Qrr
Reverse Recovery Charge (V
GS
=0V, I
S
=1.1A, dl
F
/dt=100A/us)
*3
-
0.53
-
nC
*3: Pulse Test: Pulse Width
300us, Duty Cycle
2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 3/5
H01N60I, H01N60J
HSMC Product Specification
TO-252 Dimension
M
N
A
a2
a5
L
C
3
2
1
a1
G
H
F
a1
A
B
C
D
a1
E
J
K
a2
a2
L
F
G
H
I
y2
y2
a1
M
y1
a1
O
N
y1
y1
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
Marking:
Control Code
Date Code
H
J
0 1
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
N 6 0
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
Min.
Max.
A
6.35
6.80
C
4.80
5.50
F
1.30
1.70
G
5.40
6.25
H
2.20
3.00
L
0.40
0.90
M
2.20
2.40
N
0.90
1.50
a1
0.40
0.65
a2
-
*2.30
a5
0.65
1.05
*: Typical, Unit: mm
Marking:
H
J
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
Control Code
Date Code
0 1 N 6 0
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-252 Plastic
Surface Mount Package
HSMC Package Code: J
DIM
Min.
Max.
A
6.40
6.80
B
-
6.00
C
5.04
5.64
D
-
*4.34
E
0.40
0.80
F
0.50
0.90
G
5.90
6.30
H
2.50
2.90
I
9.20
9.80
J
0.60
1.00
K
-
0.96
L
0.66
0.86
M
2.20
2.40
N
0.70
1.10
O
0.82
1.22
a1
0.40
0.60
a2
2.10
2.50
y1
-
5
o
y2
-
3
o
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 4/5
H01N60I, H01N60J
HSMC Product Specification
TO-251 Dimension
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
a1
A
F
G
a2
K1
K
3
2
1
C
a1
M
L
Tab
H1
a2
A
B
C
D
E
a1
F
G
H
H1
K
J
a2
a2
K1
y2
y2
M
a1
y1
a1
y1
y1
I
Marking:
Control Code
Date Code
H
I
0 1
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
N 6 0
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-251
Plastic Package
HSMC Package Code: I
DIM
Min.
Max.
A
6.35
6.80
C
4.80
5.50
F
1.30
1.70
G
5.40
6.25
H1
6.75
8.00
K
0.50
0.90
K1
0.40
0.90
L
0.90
1.50
M
2.20
2.40
a1
0.40
0.65
a2
-
*2.30
*: Typical, Unit: mm
3-Lead TO-251
Plastic Package
HSMC Package Code: I
Marking:
Control Code
Date Code
H
I
0 1
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
N
0
6
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
Min.
Max.
A
6.40
6.80
B
-
6.00
C
5.04
5.64
D
-
*4.34
E
0.40
0.80
F
0.50
0.90
G
5.90
6.30
H
-
*1.80
H1
-
*9.30
I
-
*16.10
J
-
*0.80
K
-
0.96
K1
-
*0.76
M
2.20
2.40
a1
0.40
0.60
a2
2.10
2.50
y1
-
5
o
y2
-
3
o
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 5/5
H01N60I, H01N60J
HSMC Product Specification
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%15%
2. Reflow soldering of surface-mount devices
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (T
L
to T
P
)
<3
o
C/sec
<3
o
C/sec
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
Tsmax to T
L
- Ramp-up Rate
<3
o
C/sec
<3
o
C/sec
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
183
o
C
60~150 sec
217
o
C
60~150 sec
Peak Temperature (T
P
)
240
o
C +0/-5
o
C
260
o
C +0/-5
o
C
Time within 5
o
C of actual Peak
Temperature (t
P
)
10~30 sec
20~40 sec
Ramp-down Rate
<6
o
C/sec
<6
o
C/sec
Time 25
o
C to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
Dipping time
Pb devices.
245
o
C
5
o
C
5sec
1sec
Pb-Free devices.
260
o
C +0/-5
o
C
5sec
1sec
Figure 1: Temperature profile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25
t 25
o
C to Peak
Time
Tem
p
erature
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