HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 1/4
H2N4401
HSMC Product Specification
H2N4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N4401 is designed for general purpose switching and amplifier
applications.
Features
Complementary to H2N4403
High Power Dissipation : 625 mW at 25
C
High DC Current Gain : 100-300 at 150mA
High Breakdown Voltage : 40 V Min.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
C
Junction Temperature................................................................................................ +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C).............................................................................................625 mW
Maximum Voltages and Currents (Ta=25
C)
VCBO Collector to Base Voltage .................................................................................................... 60 V
VCEO Collector to Emitter Voltage ................................................................................................. 40 V
VEBO Emitter to Base Voltage ......................................................................................................... 5 V
IC Collector Current ................................................................................................................... 600 mA
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
60
-
-
V
IC=100uA, IE=0
BVCEO
40
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=10uA, IC=0
ICEX
-
-
100
nA
VCE=35V, VBE=0.4V
*VCE(sat)1
-
-
400
mV
IC=150mA, IB=15mA
*VCE(sat)2
-
-
750
mV
IC=500mA, IB=50mA
*VBE(sat)1
750
-
950
mV
IC=150mA, IB=15mA
*VBE(sat)2
-
-
1.2
V
IC=500mA, IB=50mA
*hFE1
20
-
-
VCE=1V, IC=0.1mA
*hFE2
40
-
-
VCE=1V, IC=1mA
*hFE3
80
-
-
VCE=1V, IC=10mA
*hFE4
100
-
300
VCE=1V, IC=150mA
*hFE5
40
-
-
VCE=2V, IC=500mA
fT
250
-
-
MHz
VCE=10V, IC=20mA, f=100MHz
Cob
-
-
6.5
pF
VCB=5V, IE=0, f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification of hFE4
Rank
A
B
Range
100-210
190-300
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 2/4
H2N4401
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
1000
Collector Current-I
C
(mA)
hFE
hFE @ V
CE
=1V
25
o
C
75
o
C
125
o
C
Current Gain & Collector Current
10
100
1000
1
10
100
1000
Collector Current-I
C
(mA)
hFE
hFE @ V
CE
=2V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
V
CE(sat)
@ I
C
=10I
B
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
100
1000
0.1
1
10
100
1000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
V
BE(sat)
@ I
C
=10I
B
25
o
C
75
o
C
125
o
C
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
Reverse Biased Voltage (V)
C
a
pa
c
i
t
a
nc
e
(
p
F
)
Cob
Cutoff Frequency & Collector Current
10
100
1000
1
10
100
1000
Collector Current (mA)
C
u
t
o
f
f
F
r
equen
c
y
(
M
H
z
)
...
V
CE
=10V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 3/4
H2N4401
HSMC Product Specification
Safe Operating Area
1
10
100
1000
10000
1
10
100
Forward Biased oltage-V
CE
( V )
Co
lle
t
o
r
Cu
r
r
e
n
t
-
I
C
(m
A
)
PT=1ms
PT=100ms
PT=1s
PD-Ta
0
100
200
300
400
500
600
700
0
50
100
150
200
Ambient Temperature-Ta (
o
C)
P
o
w
e
r
D
i
s
s
i
pa
t
i
on-
P
D
(
m
W)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6215
Issued Date : 1992.09.22
Revised Date : 2002.02.22
Page No. : 4/4
H2N4401
HSMC Product Specification
TO-92 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1704
0.1902
4.33
4.83
G
0.0142
0.0220
0.36
0.56
B
0.1704
0.1902
4.33
4.83
H
-
*0.1000
-
*2.54
C
0.5000
-
12.70
-
I
-
*0.0500
-
*1.27
D
0.0142
0.0220
0.36
0.56
1
-
*5
-
*5
E
-
*0.0500
-
*1.27
2
-
*2
-
*2
F
0.1323
0.1480
3.36
3.76
3
-
*2
-
*2
Notes:
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
HSMC Package Code: A
Marking:
H
N
4
4
0
Date Code
Control Code
2
Rank
1
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