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Электронный компонент: H2N5401

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 1/4
H2N5401
HSMC Product Specification
H2N5401
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5401 is designed for general purpose applications requiring
high breakdown voltages.
Features
Complements to NPN Type H2N5551
High Collector-Emitter Breakdown Voltage (VCEO=150V (@IC=1mA))
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature .................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C) ................................................................................ 625 mW
Maximum Voltages and Currents (Ta=25
C)
VCBO Collector to Base Voltage ...................................................................................... -160 V
VCEO Collector to Emitter Voltage ................................................................................... -150 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current....................................................................................................... -600 mA
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-160
-
-
V
IC=-100uA, IE=0
BVCEO
-150
-
-
V
IC=-1mA, IB=0
BVEBO
-5
-
-
V
IE=-10uA, IC=0
ICBO
-
-
-50
nA
VCB=-120V, IE=0
IEBO
-
-
-50
nA
VEB=-3V. IC=0
*VCE(sat)1
-
-
-0.2
V
IC=-10mA, IB=-1mA
*VCE(sat)2
-
-
-0.5
V
IC=-50mA, IB=-5mA
*VBE(sat)1
-
-
-1
V
IC=-10mA, IB=-1mA
*VBE(sat)2
-
-
-1
V
IC=-50mA, IB=-5mA
*hFE1
50
-
-
VCE=-5V, IC=-1mA
*hFE2
80
160
400
VCE=-5V, IC=-10mA
*hFE3
50
-
-
VCE=-5V, IC=-50mA
fT
100
-
300
MHz
VCE=-10V, IC=-10mA, f=100MHz
Cob
-
-
6
pF
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification of hFE2
Rank
A
N
C
Range
80-200
100-240
160-400
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 2/4
H2N5401
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1000
1
10
100
1000
Collector Current-I
C
(mA)
hFE
hFE @ V
CE
=5V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
10000
100000
0.1
1
10
100
1000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
V
CE(sat)
@ I
C
=10I
B
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
100
1000
0.1
1
10
100
1000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
V
BE(sat)
@ I
C
=10I
B
25
o
C
75
o
C
125
o
C
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
Reverse Biased Voltage (V)
C
a
pac
i
t
an
c
e
(
p
F)
Cob
Cutoff Frequency & IC
10
100
1000
1
10
100
Collector Current-I
C
(mA)
C
u
t
o
f
f
F
r
equen
c
y
(
M
H
z
)
...
V
CE
=10V
Safe Operating Area
1
10
100
1000
10000
1
10
100
1000
Forward Biased Voltage-V
CE
(V)
Co
lle
c
t
o
r
Cu
r
r
e
n
t
-
I
C
(mA
)
PT=1ms
PT=100ms
PT=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 3/4
H2N5401
HSMC Product Specification
PD-Ta
0
100
200
300
400
500
600
700
0
50
100
150
200
Ambient Temperature-Ta (
o
C)
P
o
w
e
r
D
i
s
s
i
pa
t
i
on-
P
D
(
m
W)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6203
Issued Date : 1992.09.22
Revised Date : 2002.02.20
Page No. : 4/4
H2N5401
HSMC Product Specification
TO-92 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1704
0.1902
4.33
4.83
G
0.0142
0.0220
0.36
0.56
B
0.1704
0.1902
4.33
4.83
H
-
*0.1000
-
*2.54
C
0.5000
-
12.70
-
I
-
*0.0500
-
*1.27
D
0.0142
0.0220
0.36
0.56
1
-
*5
-
*5
E
-
*0.0500
-
*1.27
2
-
*2
-
*2
F
0.1323
0.1480
3.36
3.76
3
-
*2
-
*2
Notes:
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Base 3.Collector
3-Lead TO-92 Plastic Package
HSMC Package Code: A
Marking:
H
N
4
5
0
Date Code
Control Code
2
Rank
1