HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999.08.01
Page No. : 1/3
HSMC Product Specification
H2N6388
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6388 is designed for general-purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature ................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
C) .................................................................................... 65 W
Total Power Dissipation (Ta=25
C) ...................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ...................................................................................... 80 V
BVCEO Collector to Emitter Voltage................................................................................... 80 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ............................................................................................................ 10 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
80
-
-
V
IC=1mA, IE=0
*BVCEO
80
-
-
V
IC=200mA, IB=0
ICBO
-
-
100
uA
VCB=160V, IE=0
IEBO
-
-
5
mA
VEB=5V, IC=0
ICEO
-
-
1
mA
VCE=80V, IB=0
ICEV
-
-
300
uA
VCE=80V, VBE(off)=1.5V
*VCE(sat)1
-
-
2
V
IC=5A, IB=10mA
*VCE(sat)2
-
-
3
V
IC=10A, IB=100mA
*VCE(sat)3
-
1.5
-
V
IC=5A, IB=2.5mA
*VBE(sat)
-
2
-
V
IC=5A, IB=5mA
VBE(on)1
-
-
2.8
V
IC=5A, VCE=3V
VBE(on)2
-
-
4.5
V
IC=10A, VCE=3V
*hFE1
1
-
20
K
IC=5A, VCE=3V
*hFE2
100
-
-
IC=10A, VCE=3V
VFEC
-
3
-
V
IC=5A
Cob
-
-
200
pF
VCB=10V, IE=0
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
Classification of
Rank
hFE1
VCE(sat)1
VCE(sat)3
VBE(sat)
VFEC
KC
2-20K
<1.3V
<1.5V
<2.0V
<3.0V
Normal
1-20K
<2.0V
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999.08.01
Page No. : 2/3
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current (mA)
hF
E
hFE @ V
CE
=3V
Saturation Voltage & Collector Current
100
1000
10000
100
1000
10000
Collector Current (mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
V
BE(sat)
@ I
C
=100I
B
V
CE(sat)
@ I
C
=100I
B
On Voltage & Collector Current
100
1000
10000
10
100
1000
10000
Collector Current (mA)
On
V
o
l
t
a
g
e
(
m
V
)
V
BE(on)
@ V
CE
=3V
Switching Time & Collector Current
0.1
1
10
1
10
Collector Current (A)
S
w
i
t
ch
i
n
g
T
i
m
e
s (
u
s)
Tstg
V
CC
=30V, I
C
=250I
B1
=-250I
B2
Tf
Ton
Capacitance & Reverse-Biased Voltage
10
100
1000
0.1
1
10
100
Reverse-Biased Voltage (V)
Ca
p
a
c
t
ia
n
c
e
(
p
F
)
Cob
Safe Operating Area
1
10
100
1000
10000
100000
1
10
100
Forward Voltage-V
CE
(V)
C
o
l
l
e
c
t
o
r
C
u
rre
n
t
-I
C
(m
A
)
P
T
=1ms
P
T
=100ms
P
T
=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6714-C
Issued Date : 1992.12.15
Revised Date : 1999.08.01
Page No. : 3/3
HSMC Product Specification
TO-220AB Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.2197
0.2949
5.58
7.49
I
-
*
0.1508
-
*
3.83
B
0.3299
0.3504
8.38
8.90
K
0.0295
0.0374
0.75
0.95
C
0.1732
0.185
4.40
4.70
M
0.0449
0.0551
1.14
1.40
D
0.0453
0.0547
1.15
1.39
N
-
*
0.1000
-
*
2.54
E
0.0138
0.0236
0.35
0.60
O
0.5000
0.5618
12.70
14.27
G
0.3803
0.4047
9.66
10.28
P
0.5701
0.6248
14.48
15.87
H
-
*
0.6398
-
*
16.25
Notes :
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
A
B
E
G
I
K
M
O
P
3
2
1
C
N
H
D
4
Style : Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Package
HSMC Package Code : E
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
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