ChipFind - документация

Электронный компонент: HBF4522D

Скачать:  PDF   ZIP
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 1/3
HBF4522D
HSMC Product Specification
HBF4522D
NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Description
HBF4522D is designed for use in the monitor dynamic focus circuit. It
can be used up to 19" monitor with working frequency as high as
100KHz.
Features
High Breakdown Voltage
Low C-E Saturation Voltage
High Cutoff Frequency
High Current Gain
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
C
Junction Temperature .................................................................................................... +150
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C).................................................................................... 1.5 W
Total Power Dissipation (Tc=25
C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 550 V
BVCEO Collector to Emitter Voltage.................................................................................. 550 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 20 mA
Electrical Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO
550
-
-
V
IC=1mA
BVCBO
550
-
-
V
IC=100uA
BVEBO
7
-
-
V
IE=10uA,
ICBO
-
-
1
uA
VCB=500V
IEBO
-
-
100
nA
VEB=5V
*VCE(sat)
-
0.35
0.5
V
IC=30mA, IB=3mA
*hFE
100
150
200
VCE=20V, IC=30mA
fT
90
-
-
MHz
VCE=10V, IE=30mA, ftest=100MHz
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
TO-126ML
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 2/3
HBF4522D
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
Collector Current-I
C
(mA)
hFE
hFE @ V
CE
=20V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
10000
100000
1
10
100
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage & Collector Current
100
1000
1
10
100
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
125
o
C
75
o
C
25
o
C
V
BE(sat)
@ I
C
=10I
B
Capacitance & Reverse-Biased Voltage
1
10
0.1
1
10
100
Reverse Biased Voltage (V)
C
apac
i
t
a
n
c
e
(
p
f
)
Cob
Cutoff Frequency & Collector Current
100
1000
1
10
100
Collector Current-I
C
(mA)
C
u
t
o
f
f
F
r
e
quen
c
y
(
M
H
z
)
...
fT @ V
CE
=10V
Safe Operating Area
0.001
0.01
0.1
1
10
1
10
100
1000
Forward Biased Voltage (V)
C
o
l
l
e
c
t
o
r
C
u
rre
n
t
-I
C
(A
)
PT=1ms
PT=1s
PT=100ms
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 3/3
HBF4522D
HSMC Product Specification
TO-126ML Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1356
0.1457
3.44
3.70
I
-
*0.1795
-
*4.56
B
0.0170
0.0272
0.43
0.69
J
0.0268
0.0331
0.68
0.84
C
0.0344
0.0444
0.87
1.12
K
0.5512
0.5906
14.00
15.00
D
0.0501
0.0601
1.27
1.52
L
0.2903
0.3003
7.37
7.62
E
0.1131
0.1231
2.87
3.12
M
0.1378
0.1478
3.50
3.75
F
0.0737
0.0837
1.87
2.12
N
0.1525
0.1625
3.87
4.12
G
0.0294
0.0494
0.74
1.25
O
0.0740
0.0842
1.88
2.14
H
0.0462
0.0562
1.17
1.42
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
N
D
E
M
L
K
F
I
A
B
C
H
J
3
2
1
O
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
HSMC Package Code: D
Marking:
Date Code
5
4
2
H
F
Control Code
B
2 D