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Электронный компонент: HLB120A

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2002.01.31
Page No. : 1/3
HLB120A
HSMC Product Specification
HLB120A
NPN Triple Diffused Planar Type High Voltage Transistors
Description
The HLB120A is a medium power transistor designed for use in
switching applications.
Features
High Breakdown Voltage
Low Collector Saturation Voltage
Fast Switching Speed
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature .................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C)................................................................................ 625 mW
Total Power Dissipation (Tc=25
C) ....................................................................................... 7 W
Maximum Voltages and Currents (Ta=25
C)
VCBO Collector to Base Voltage ....................................................................................... 600 V
VCEO Collector to Emitter Voltage .................................................................................... 400 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current (DC) ............................................................................................... 100 mA
IC Collector Current (Pulse) ........................................................................................... 200 mA
IB Base Current (DC) ....................................................................................................... 20 mA
IB Base Current (Pulse).................................................................................................... 40 mA
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max
Unit
Test Conditions
BVCBO
600
-
-
V
IC=100uA, IE=0
BVCEO
400
-
-
V
IC=10mA, IB=0
BVEBO
6
-
-
V
IE=10uA,, IC=0
ICBO
-
-
10
uA
VCB=550V
ICEO
-
-
10
uA
VCE=400V, IB=0
IEBO
-
-
10
uA
VEB=6V, IC=0
*VCE(sat)1
-
-
400
mV
IC=50mA, IB=10mA
*VCE(sat)2
-
-
750
mV
IC=100mA, IB=20mA
*VBE(sat)
-
-
1
V
IC=50mA, IB=10mA
*hFE1
8
-
-
VCE=10V, IC=10mA
*hFE2
10
-
36
VCE=10V, IC=50mA
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2002.01.31
Page No. : 2/3
HLB120A
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1
10
100
1000
Collector Current (mA)
hF
E
V
CE
=10V
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
Collector Current (mA)
S
a
t
u
r
a
t
i
on V
o
l
t
age (
m
V
)
V
CE(sat)
@ I
C
=5I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
Collector Current (mA)
S
a
t
u
r
a
t
i
on V
o
l
t
ag
e (
m
V
)
V
BE(sat)
@ I
C
=5I
B
Capacitance & Reverse-Biased Voltage
1
10
1
10
100
Reverse Biased Voltage (V)
C
apa
c
i
t
anc
e (
P
f
)
Cob
Switching time & Collector Current
0.01
0.10
1.00
10.00
10
100
Collector Current (mA)
S
w
i
t
ch
i
n
g
T
i
m
e
(
u
s)
...
Tstg
Ton
Tf
V
CC
=125V, I
C
=5I
B
Safe Operating Area
0.001
0.01
0.1
1
1
10
100
1000
Forward Voltage (V)
C
o
l
l
e
c
t
o
r
C
u
rre
n
t
(mA
)
PT=1ms
PT=100ms
PT=1s
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6412
Issued Date : 1998.12.01
Revised Date : 2002.01.31
Page No. : 3/3
HLB120A
HSMC Product Specification
TO-92 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1704
0.1902
4.33
4.83
G
0.0142
0.0220
0.36
0.56
B
0.1704
0.1902
4.33
4.83
H
-
*0.1000
-
*2.54
C
0.5000
-
12.70
-
I
-
*0.0500
-
*1.27
D
0.0142
0.0220
0.36
0.56
1
-
*5
-
*5
E
-
*0.0500
-
*1.27
2
-
*2
-
*2
F
0.1323
0.1480
3.36
3.76
3
-
*2
-
*2
Notes:
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package
HSMC Package Code: A
Marking:
HSMC Logo
Part Number
Date Code
Product Series
Rank
Laser Mark
HSMC Logo
Part Number
Product Series
Ink Mark