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Электронный компонент: HLB125HE

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 1/5
HLB125HE
HSMC Product Specification
HLB125HE
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB125HE is designed for lighting applications and low switch-mode power
supplies. And it is high voltage capability and high switching speeds.
Features
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
(T
A
=25
C)
Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150
C
Junction Temperature ..................................................................................................................... 150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
C
=25
C) .................................................................................................................... 75 W
Maximum Voltages and Currents (T
A
=25
C)
V
CEX
Collector to Emitter Voltage ...................................................................................................................... 700 V
V
CEO
Collector to Emitter Voltage ...................................................................................................................... 400 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 9 V
I
C
Collector Current (Continuous) .......................................................................................................................... 4 A
I
B
Base Current (Continuous) ................................................................................................................................ 2 A
Electrical Characteristics
(T
A
=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CEX
700
-
-
V
I
C
=1mA, V
BE(off)
=1.5V
BV
CEO
400
-
-
V
I
C
=10mA
I
EBO
-
-
1
mA
V
EB
=9V
I
CEX
-
-
1
mA
V
CE
=700V, V
BE(off)
=1.5V
*V
CE(sat)1
-
-
500
mV
I
C
=1A, I
B
=200mA
*V
CE(sat)2
-
-
0.6
V
I
C
=2A, I
B
=500mA
*V
CE(sat)3
-
-
1
V
I
C
=4A, I
B
=1A
*V
BE(sat)
-
-
1.2
V
I
C
=1A, I
B
=200mA
*V
BE(sat)
-
-
1.6
V
I
C
=2A, I
B
=500mA
*h
FE
15
-
25
I
C
=2A, V
CE
=5V
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
TO-220
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 2/5
HLB125HE
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
1
10
100
1000
10000
Collector Current-I
C
(mA)
hFE
hFE @ V
CE
=5V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
V
CE(sat)
@ I
C
=5I
B
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
V
CE(sat)
@ I
C
=4I
B
25
o
C
125
o
C
75
o
C
Saturation Voltage & Collector Current
100
1000
10000
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
V
BE(sat)
@ I
C
=5I
B
125
o
C
75
o
C
25
o
C
Saturation Voltage & Collector Current
100
1000
10000
10
100
1000
10000
Collector Current-I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
l
t
a
g
e
(
m
V)
V
BE(sat)
@ I
C
=4I
B
125
o
C
75
o
C
25
o
C
Capacitance & Reverse-Biased Voltage
1
10
100
1000
0.1
1
10
100
Reverse-Biased (V)
Capac
i
t
a
n
c
e
(
p
F
)
Cob
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 3/5
HLB125HE
HSMC Product Specification
Switching time vs Collector Current
0.1
1.0
10.0
0.1
1
10
Collector Current(A)
S
w
it
c
h
in
g
Tim
e
(
u
s
)
..
.
Tstg
Ton
Toff
Vcc=125V, IC=2A, IB1=IB2=0.4A
Safe Operating Area
0.01
0.1
1
10
1
10
100
1000
10000
Forward Voltage-V
CE
(V)
C
o
l
l
e
c
t
o
r
C
u
rre
n
t
-I
C
(A
)
PT=1ms
PT=100ms
PT=1s
PT=10uS
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 4/5
HLB125HE
HSMC Product Specification
TO-220AB Dimension
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056
Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
B
E
G
I
K
M
O
P
3
2
1
C
N
H
D
Tab
F
J
L
Marking:
Control Code
Date Code
H
1 2
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
5 H
L B
E
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
DIM
Min.
Max.
A
5.58
7.49
B
8.38
8.90
C
4.40
4.70
D
1.15
1.39
E
0.35
0.60
F
2.03
2.92
G
9.66
10.28
H
-
*16.25
I
-
*3.83
J
3.00
4.00
K
0.75
0.95
L
2.54
3.42
M
1.14
1.40
N
-
*2.54
O
12.70
14.27
P
14.48
15.87
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200214
Issued Date : 2002.09.01
Revised Date : 2004.11.08
Page No. : 5/5
HLB125HE
HSMC Product Specification
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%15%
2. Reflow soldering of surface-mount devices
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (T
L
to T
P
)
<3
o
C/sec
<3
o
C/sec
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
Tsmax to T
L
- Ramp-up Rate
<3
o
C/sec
<3
o
C/sec
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
183
o
C
60~150 sec
217
o
C
60~150 sec
Peak Temperature (T
P
)
240
o
C +0/-5
o
C
260
o
C +0/-5
o
C
Time within 5
o
C of actual Peak
Temperature (t
P
)
10~30 sec
20~40 sec
Ramp-down Rate
<6
o
C/sec
<6
o
C/sec
Time 25
o
C to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
Dipping time
Pb devices.
245
o
C
5
o
C
5sec
1sec
Pb-Free devices.
260
o
C +0/-5
o
C
5sec
1sec
Figure 1: Temperature profile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25
t 25
o
C to Peak
Time
Tem
p
erature