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Электронный компонент: HMJE13001

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200213
Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 1/4
HMJE13001
HSMC Product Specification
HMJE13001
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HMJE13001 is a medium power transistor designed for use in switching
applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
C
Junction Temperature .................................................................................................................................... +150
C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
C) ...................................................................................................................... 1 W
Total Power Dissipation (T
C
=25
C) .................................................................................................................... 10 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 600 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 400 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 6 V
I
C
Collector Current (DC)................................................................................................................................ 300 mA
I
C
Collector Current (Pulse)............................................................................................................................ 600 mA
I
B
Base Current (DC)........................................................................................................................................ 40 mA
I
B
Base Current (Pulse).................................................................................................................................. 100 mA
Electrical Characteristics
(T
A
=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
CBO
600
-
-
V
I
C
=100uA
BV
CEO
400
-
-
V
I
C
=10mA
BV
EBO
6
-
-
V
I
E
=10uA
I
CBO
-
-
10
uA
V
CB
=550V
I
CEO
-
-
10
uA
V
CB
=400V
I
EBO
-
-
10
uA
V
EB
=6V
*V
CE(sat)1
-
-
400
mV
I
C
=50mA, I
B
=10mA
*V
CE(sat)2
-
-
750
mV
I
C
=100mA, I
B
=20mA
*V
BE(sat)
-
-
1
V
I
C
=50mA, I
B
=10mA
*h
FE1
8
-
-
V
CE
=10V, I
C
=10mA
*h
FE2
10
-
36
V
CE
=10V, I
C
=50mA
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
TO-92
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200213
Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 2/4
HMJE13001
HSMC Product Specification
Characteristics Curve
Power Derating
0
200
400
600
800
1000
1200
0
20
40
60
80
100
120
140
160
Ta(
o
C), Ambtient Temperatuer
P
D
(
m
W
)
,
P
ow
er
D
i
s
s
i
pat
i
o
n
Safe Operating Area
0.01
0.1
1
1
10
100
1000
Forward Voltage-V
CE
(V)
Co
lle
c
t
o
r
Cu
r
r
e
n
t
-
I
C
(A
)
PT=1mS
PT=100mS
PT=1S
Current Gain & Collector Current
1
10
100
0.1
1
10
100
1000
Collector Current-I
C
(mA)
hFE
25
o
C
75
o
C
125
o
C
hFE @ V
CE
=10V
Saturation Voltage & Collector Current
10
100
1000
10000
100000
0.1
1
10
100
1000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
125
o
C
75
o
C
25
o
C
V
CE(sat)
@ I
C
=5I
B
Saturation Voltage & Collector Current
100
1000
0.1
1
10
100
1000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
75
o
C
125
o
C
V
BE(sat)
@ I
C
=5I
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200213
Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 3/4
HMJE13001
HSMC Product Specification
TO-92 Dimension
TO-92 Taping Dimension
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
1
A
D
B
C
I
1
E
2
3
G
H
2
F
H2A
H2A
H2
H2
D2
A
H
W
W1
H3
H4
H1
L1
L
P2
P
P1
F1F2
D1
D
T2
T
T1
DIM
Min.
Max.
A
4.33
4.83
B
4.33
4.83
C
12.70
-
D
0.36
0.56
E
-
*1.27
F
3.36
3.76
G
0.36
0.56
H
-
*2.54
I
-
*1.27
1
-
*5
2
-
*2
3
-
*2
*: Typical, Unit: mm
3-Lead TO-92 Plastic Package
HSMC Package Code: A
DIM
Min.
Max.
A
4.33
4.83
D
3.80
4.20
D1
0.36
0.53
D2
4.33
4.83
F1,F2
2.40
2.90
H
15.50
16.50
H1
8.50
9.50
H2
-
1
H2A
-
1
H3
-
27
H4
-
21
L
-
11
L1
2.50
-
P
12.50
12.90
P1
5.95
6.75
P2
50.30
51.30
T
-
0.55
T1
-
1.42
T2
0.36
0.68
W
17.50
19.00
W1
5.00
7.00
Unit: mm
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
Control Code
Date Code
H
1 3 0
E
0
J
1
M
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200213
Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 4/4
HMJE13001
HSMC Product Specification
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%15%
2. Reflow soldering of surface-mount devices
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (T
L
to T
P
)
<3
o
C/sec
<3
o
C/sec
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
Tsmax to T
L
- Ramp-up Rate
<3
o
C/sec
<3
o
C/sec
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
183
o
C
60~150 sec
217
o
C
60~150 sec
Peak Temperature (T
P
)
240
o
C +0/-5
o
C
260
o
C +0/-5
o
C
Time within 5
o
C of actual Peak
Temperature (t
P
)
10~30 sec
20~40 sec
Ramp-down Rate
<6
o
C/sec
<6
o
C/sec
Time 25
o
C to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
Dipping time
Pb devices.
245
o
C
5
o
C
5sec
1sec
Pb-Free devices.
260
o
C +0/-5
o
C
5sec
1sec
Figure 1: Temperature profile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25
t 25
o
C to Peak
Time
Tem
p
erature