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Электронный компонент: HMJE13003T

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002.05.08
Page No. : 1/3
HMJE13003T
HSMC Product Specification
HMJE13003T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE13003T is designed for high voltage. High speed switching
inductive circuits and amplifier applications.
Features
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
C
Junction Temperature .................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C).................................................................................... 3.5 W
Total Power Dissipation (Tc=25
C) ..................................................................................... 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 8 V
IC Collector Current (DC) ...................................................................................................... 1 A
IC Collector Current (Pulse) .................................................................................................. 2 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
-
-
V
IC=1mA, IE=0
BVCEO
400
-
-
V
IC=10mA, IB=0
BVEBO
8
-
-
V
IE=1mA, IC=0
ICBO
-
-
10
uA
VCB=600V, IE=0
IEBO
-
-
10
uA
VBE=9V, IC=0
*VCE(sat)1
-
-
0.8
V
IC=0.1A, IB=10mA
*VCE(sat)2
-
-
0.9
V
IC=0.3A, IB=30mA
*VBE(sat)1
-
-
1.2
V
IC=0.1A, IB=10mA
*VBE(sat)2
-
-
1.8
V
IC=0.3A, IB=30mA
*hFE1
10
-
50
IC=0.3A, VCE=5V
*hFE2
10
-
-
IC=0.5A, VCE=5V
*hFE3
6
-
-
IC=1A, VCE=5V
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
TO-126
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002.05.08
Page No. : 2/3
HMJE13003T
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
1
10
100
0.1
1
10
100
1000
10000
Collector Current-IC (mA)
hFE
25
o
C
75
o
C
125
o
C
hFE @ V
CE
=2V
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=3I
B
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
125
o
C
75
o
C
25
o
C
V
CE(sat)
@ I
C
=4I
B
Saturation Voltage & Collector Current
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
p
l
t
a
g
e
(
m
V
)
25
o
C
125
o
C
75
o
C
V
CE(sat)
@ I
C
=5I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
125
o
C
25
o
C
75
o
C
V
BE(sat)
@ I
C
=4I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
l
t
a
g
e
(
m
V)
25
o
C
75
o
C
125
o
C
V
BE(sat)
@ I
C
=5I
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002.05.08
Page No. : 3/3
HMJE13003T
HSMC Product Specification
TO-126 Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
1
-
*3
-
*3
F
0.0280
0.0319
0.71
0.81
2
-
*3
-
*3
G
0.0480
0.0520
1.22
1.32
3
-
*3
-
*3
H
0.1709
0.1890
4.34
4.80
4
-
*3
-
*3
I
0.0950
0.1050
2.41
2.66
A
0.1500
0.1539
3.81
3.91
J
0.0450
0.0550
1.14
1.39
B
0.2752
0.2791
6.99
7.09
K
0.0450
0.0550
1.14
1.39
C
0.5315
0.6102
13.50
15.50
L
-
*0.0217
-
*0.55
D
0.2854
0.3039
7.52
7.72
M
0.1378
0.1520
3.50
3.86
E
0.0374
0.0413
0.95
1.05
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
B
C
F
D
E
H
1 2 3
K
J
I
3
4
L
M
1
2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
HSMC Package Code: T
Marking:
HSMC Logo
Part Number
Date Code
Product Series
Ink Marking