ChipFind - документация

Электронный компонент: HSB772

Скачать:  PDF   ZIP
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 1/4
HSB772
HSMC Product Specification
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings
(Ta=25
C)
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature .................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C) .................................................................................... 1.4 W
Total Power Dissipation (Tc=25
C) ..................................................................................... 10 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................ -7 A
IB Base Current (DC) ....................................................................................................... -0.6 A
Electrical Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-40
-
-
V
IC=-100uA
BVCEO
-30
-
-
V
IC=-1mA
BVEBO
-5
-
-
V
IE=-10uA
ICBO
-
-
-1
uA
VCB=-30V
IEBO
-
-
-1
uA
VEB=-3V
*VCE(sat)
-
-0.3
-0.5
V
IC=-2A, IB=-0.2A
*VBE(sat)
-
-1
-2
V
IC=-2A, IB=-0.2A
*hFE1
30
-
-
IC=-20mA, VCE=-2V
*hFE2
100
200
400
IC=-1A, VCE=-2V
fT
-
80
-
MHz
IC=-0.1A, VCE=-5V
Cob
-
55
-
pF
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
Classification Of hFE2
Rank
Q
P
E
Range
100-200
160-320
200-400
TO-126ML
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 2/4
HSB772
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
hFE
25
o
C
75
o
C
125
o
C
hFE @ V
CE
=2V
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=5I
B
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=10I
B
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
25
o
C
125
o
C
75
o
C
V
CE(sat)
@ I
C
=20I
B
Saturation Voltage & Collector Current
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
Sa
t
u
r
a
t
i
o
n
Vo
l
t
a
g
e
(
m
V)
25
o
C
75
o
C
125
o
C
V
CE(sat)
@ I
C
=40I
B
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
t
u
r
a
t
i
on V
o
l
t
a
ge (
m
V
)
125
o
C
25
o
C
75
o
C
V
BE(sat)
@ I
C
=10I
B
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 3/4
HSB772
HSMC Product Specification
Safe Operating Area
0.1
1
10
1
10
100
Forward Biased Voltage (V)
C
o
l
l
e
c
t
o
r C
u
rre
n
t
-I
C
(A
)
PT=1S
PT=100mS
PT=1mS
Power Derating
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
50
100
150
200
Ta(
o
C), Ambient Temperature
P
D
(W
)
,
P
o
w
e
r D
i
s
s
i
p
a
t
i
o
n
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 4/4
HSB772
HSMC Product Specification
TO-126ML Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1356
0.1457
3.44
3.70
I
-
*0.1795
-
*4.56
B
0.0170
0.0272
0.43
0.69
J
0.0268
0.0331
0.68
0.84
C
0.0344
0.0444
0.87
1.12
K
0.5512
0.5906
14.00
15.00
D
0.0501
0.0601
1.27
1.52
L
0.2903
0.3003
7.37
7.62
E
0.1131
0.1231
2.87
3.12
M
0.1378
0.1478
3.50
3.75
F
0.0737
0.0837
1.87
2.12
N
0.1525
0.1625
3.87
4.12
G
0.0294
0.0494
0.74
1.25
O
0.0740
0.0842
1.88
2.14
H
0.0462
0.0562
1.17
1.42
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
N
D
E
M
L
K
F
I
A
B
C
H
J
3
2
1
O
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
HSMC Package Code: D
Marking:
Date Code
7
7
2
H
B
Control Code
S