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Электронный компонент: HSD879D

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 1/3
HSD879D
HSMC Product Specification
HSD879D
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V and 3v electronic flash use.
Features
Charger-up time is about 1 ms faster than of a germanium transistor.
Small saturation voltage can bring less power dissipation and flashing times.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature .................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C) .................................................................................... 1.4 W
Maximum Voltages and Currents (Ta=25
C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage .................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current .............................................................................................................. 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Condition
BVCEO
10
-
-
V
IC=1mA
BVEBO
6
-
-
V
IE=10uA
ICBO
-
-
100
nA
VCB=20V
IEBO
-
-
100
nA
VBE=4V
*VCE(sat)
-
0.3
0.4
V
IC=3A, IB=60mA
*VBE
-
0.83
1.5
V
VCE=-1V, IC=-2A
*hFE
140
210
-
VCE=2V, IC=3A
fT
-
200
-
MHZ
VCE=10V, IC=50mA
Cob
-
30
-
pF
VCB=10V, f=1KHZ
*Pulse Test: Pulse Width
380us, Duty Cycle
2%
TO-126ML
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 2/3
HSD879D
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
hFE
25
o
C
hFE @ V
CE
=2V
125
o
C
75
o
C
Saturation Voltage & Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current-I
C
(mA)
S
a
tu
r
a
ti
o
n
V
o
l
t
a
g
e
(
m
V
)
25
o
C
125
o
C
75
o
C
V
CE(sat)
@ I
C
=50I
B
ON Voltage & Collector Current
0.1
1.0
10.0
1
10
100
1000
10000
Collector Current
ON
V
o
l
t
a
g
e
V
BE(on)
@ V
CE
=2V
Cutoff Frequency & Collector Current
1
10
100
1000
1
10
100
1000
Collector Current
C
u
t
o
f
f
Fr
eq
uenc
y
V
CE
=10V
Capacitance & Reverse-Biased Voltage
1
10
100
1
10
100
Reverse Biased Voltage (V)
C
a
pac
i
t
an
c
e
(
p
F)
Cob
Safe Operating Area
0.1
1
10
100
1
10
100
Forward Voltage-V
CE
(V)
Co
lle
c
t
o
r
Cu
r
r
e
n
t
-
I
C
(m
A
)
P
T
=1ms
P
T
=1S
P
T
=100ms
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200203
Issued Date : 1996.07.15
Revised Date : 2002.02.26
Page No. : 3/3
HSD879D
HSMC Product Specification
TO-126ML Dimension
*: Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1356
0.1457
3.44
3.70
I
-
*0.1795
-
*4.56
B
0.0170
0.0272
0.43
0.69
J
0.0268
0.0331
0.68
0.84
C
0.0344
0.0444
0.87
1.12
K
0.5512
0.5906
14.00
15.00
D
0.0501
0.0601
1.27
1.52
L
0.2903
0.3003
7.37
7.62
E
0.1131
0.1231
2.87
3.12
M
0.1378
0.1478
3.50
3.75
F
0.0737
0.0837
1.87
2.12
N
0.1525
0.1625
3.87
4.12
G
0.0294
0.0494
0.74
1.25
O
0.0740
0.0842
1.88
2.14
H
0.0462
0.0562
1.17
1.42
Notes:
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
N
D
E
M
L
K
F
I
A
B
C
H
J
3
2
1
O
G
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-126ML Plastic Package
HSMC Package Code: D
Marking:
Date Code
7
8
9
H
D
Control Code
S
D