GM71V65800C
8,388,608 WORDS x 8 BIT
CMOS DYNAMIC RAM
Description
Features
8,388,604 Words x 8 Bit
Fast Page Mode Capability
Fast Access Time & Cycle Time
GM71V65800C-5
GM71V65800C-6
t
RAC
t
AA
t
RC
t
PC
50
60
25
30
90
110
35
40
Low Power
- Active : 522 mW / 450 mW / 360 mW (MAX)
- Standby : 3.6 mW ( CMOS level :MAX )
RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
LVTTL
4096 Refresh Cycles/64 ms
Single Power Supply of 3.3V+/- 0.3V
with a built-in VBB generator
(Unit: ns)
Pin Configuration
The GM71V65800C is the second generation
dynamic RAM organized 8,388,608 words by 8
bits. The GM71V65800C utilizes 0.35um
CMOS Silicon Gate Process Technology as well
as advanced circuit techniques for wide
operating margins, both internally and to the
system user. System oriented features include
single power supply of 3.3V+/- 0.3V tolerance,
d i r e c t i n t e r f a c i n g c a p a b i l i t y w i t h h i g h
performance logic families such as Schottky
TTL.
The GM71V65800C offers Fast Page Mode as
a high speed access mode.
32 SOJ / TSOP II
13
15
t
CAC
GM71V65800C-7
70
35
130
45
18
I/O2
(Top View)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
V
CC
I/O0
I/O1
I/O3
NC
V
CC
WE
RAS
A0
A1
A2
A3
A4
A5
V
CC
32
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
V
SS
A6
A7
A8
A9
A10
A11
NC
OE
CAS
V
SS
I/O6
I/O7
V
SS
I/O4
I/O5
* This Data Sheet is subject to change without notice.
Rev 0.1 / Apr'01
GM71V65800C
Rev 0.1 / Apr'01
Pin Description
Pin
Function
Pin
Function
A0-A11
A0-A11
RAS
CAS
WE
V
CC
V
SS
NC
Address Inputs
Refresh Address Inputs
Row Address Strobe
Column Address Strobe
Write Enable
Power (+3.3V)
Ground
No Connection
Absolute Maximum Ratings*
Symbol
Parameter
Rating
Unit
T
A
T
STG
V
IN
/V
OUT
V
CC
I
OUT
0 to 70
-55 to 125
-0.5 to V
CC
+ 0.5
(MAX ; 4.6V)
-0.5 to 4.6
50
Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to V
SS
Voltage on V
CC
Relative to V
SS
Short Circuit Output Current
C
C
V
V
mA
P
D
1.0
Power Dissipation
W
*Note : Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Recommended DC Operating Conditions (T
A
= 0 ~ 70C)
Symbol
Parameter
Unit
V
CC
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
V
V
V
Max
3.6
Vcc+0.3
0.8
Typ
3.3
-
-
Min
3.0
2.0
-0.3
OE
Output Enable
I/O0 - I/O7
Data Input / Data Output
Ordering Information
Type No.
Access Time
Package
GM71V65800CJ-5
GM71V65800CJ-6
GM71V65800CJ-7
50ns
60ns
70ns
400 Mil
32Pin
Plastic SOJ
GM71V65800CT-5
GM71V65800CT-6
GM71V65800CT-7
50ns
60ns
70ns
400 Mil
32Pin
Plastic TSOP II
GM71V65800C
Rev 0.1 / Apr'01
DC Electrical Characteristics: (V
CC
= 3.3V+/-0.3V, T
A
= 0 ~ 70C)
Symbol
Parameter
Note
V
OH
V
OL
Output Level
Output "H" Level Voltage (I
OUT
= -2mA)
Unit
V
V
Max
-
0.4
Min
2.4
-
Output Level
Output "L" Level Voltage (I
OUT
= 2mA)
I
CC1
mA
145
-
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling:
t
RC
=
t
RC
min)
50ns
60ns
70ns
125
100
-
-
1, 2
I
CC2
mA
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V
IH
, D
OUT
= High-Z)
2
-
I
CC3
mA
RAS-Only Refresh Current
Average Power Supply Current
RAS-Only Refresh Mode
(RAS Cycling, CAS = V
IH
, t
RC
= t
RC
min)
2
I
CC4
mA
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(RAS = V
IL
, CAS, Address Cycling: t
PC
= t
PC
min)
1, 3
-
50ns
60ns
70ns
-
-
110
-
50ns
60ns
70ns
100
90
-
-
I
CC5
mA
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS
V
CC
-0.2V, D
OUT
= High-Z)
0.5
-
I
CC6
mA
CAS-before-RAS Refresh Current
(t
RC
= t
RC
min)
-
50ns
60ns
70ns
-
-
I
CC7
mA
Standby Current
5
-
I
I(L)
uA
5
-5
I
O(L)
uA
5
-5
Input Leakage Current, Any Input
(0V
V
IN
Vcc)
Output Leakage Current
(D
OUT
is Disabled, 0V
V
OUT
Vcc)
Note: 1. I
CC
depends on output load condition when the device is selected. I
CC(max)
is specified at the
output open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Address can be changed once or less while CAS = V
IH
.
1
RAS = V
IH
CAS = V
IL
D
OUT
= Enable
145
125
100
145
125
100
GM71V65800C
Rev 0.1 / Apr'01
AC Characteristics (V
CC
= 3.3V+/- 0.3V, T
A
= 0 ~ 70C, Notes 1, 14,15,16)
Test Conditions
Input rise and fall times : 5ns Output timing reference levels : V
OL
/V
OH
= 0.8/2.0V
Input timing reference levels : V
IL
/V
IH
= 0.8/2.4V Output load : 1 TTL gate+C
L
(100pF)
(Including scope and jig)
Symbol
Parameter
Note
C
I1
C
I2
C
O
Input Capacitance (Address, Data-In)
Input Capacitance (Clocks)
Output Capacitance (Data-Out)
1
1
1, 2
Unit
pF
pF
pF
Max
5
7
7
Typ
-
-
-
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
Capacitance (V
CC
= 3.3V+/- 0.3V, T
A
= 25C)
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol
Parameter
Min
GM71V65800C-5
Max
Max
Min
t
RC
Random Read or Write Cycle Time
t
RP
RAS Precharge Time
t
RAS
RAS Pulse Width
t
CAS
CAS Pulse Width
t
ASR
Row Address Set-up Time
t
RAH
Row Address Hold Time
t
ASC
Column Address Set-up Time
t
CAH
Column Address Hold Time
t
RCD
RAS to CAS Delay Time
9
t
RAD
RAS to Column Address Delay Time
8
t
RSH
RAS Hold Time
t
CSH
CAS Hold Time
t
CRP
CAS to RAS Precharge Time
Max
Min
90
110
40
60
15
0
10
0
15
20
15
15
60
5
30
50
13
0
10
0
10
20
15
13
50
5
-
-
-
25
37
-
-
-
-
10000
-
-
-
-
10000
-
-
-
-
45
30
-
-
-
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
T
Transition Time
(Rise and Fall)
t
REF
Refresh Period
3
-
3
-
64
50
50
64
ns
ms
t
ODD
OE to D
IN
Delay Time
t
DZO
OE Delay Time from D
IN
t
DZC
CAS Set-up Time from D
IN
15
0
0
13
0
0
-
-
-
-
-
-
ns
ns
ns
70
20
130
-
50
-
10000
0
-
10
-
0
-
15
-
20
50
15
35
20
-
70
-
5
-
20
-
0
-
0
-
3
50
-
64
7
GM71V65800C-6
GM71V65800C-7
t
CP
CAS Precharge Time
10
10
-
-
ns
10
-
10000
10000
10000
GM71V65800C
Rev 0.1 / Apr'01
Read Cycles
Write Cycles
t
WCS
Write Command Set-up Time
t
WCH
Write Command Hold Time
t
WP
Write Command Pulse Width
t
RWL
Write Command to RAS Lead Time
t
CWL
Write Command to CAS Lead Time
t
DS
Data-in Set-up Time
t
DH
Data-in Hold Time
Symbol
Parameter
Min
GM71V65800C-5
GM71V65800C-6
GM71V65800C-7
Max
Max
Min
Max
Min
-
-
-
-
0
0
0
30
-
-
0
0
0
25
-
-
-
25
13
50
60
15
30
-
-
-
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
-
-
t
RAC
t
CAC
t
AA
t
RCS
t
RCH
t
RRH
t
RAL
t
OFF
t
OEZ
t
CDD
Access Time from RAS
Access Time from CAS
Access Time from Column Address
Read Command Set-up Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
Output Buffer Turn-off Time
Output Buffer Turn-off Time from OE
CAS to D
IN
Delay Time
2,3,17
Symbol
Parameter
Min
Max
Max
Min
Max
Min
0
0
15
10
15
15
0
15
10
10
15
13
0
10
-
-
-
-
-
-
-
-
-
-
-
-
Unit Note
ns
ns
ns
ns
ns
ns
ns
-
-
10
11
11
ns
t
OEP
OE Pulse width
t
OAC
Access Time from OE
-
13
-
15
-
20
ns
-
70
-
20
-
35
0
-
0
-
0
-
35
-
20
-
20
-
20
0
0
20
0
0
13
13
-
15
-
-
15
-
13
0
15
13
0
15
3,4
13,17
3,5
13,17
3,17
0
15
10
20
20
0
15
-
-
-
-
-
-
-
GM71V65800C-5
GM71V65800C-6
GM71V65800C-7
6
6
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