4,194,304 WORDS x 4 BIT
CMOS DYNAMIC RAM
Description
The GM71V(S)16400C/CL is the new
generation dynamic RAM organized 4,194,304
words x 4 bit. GM71V(S)16400C/CL has
realized higher density, higher performance and
various functions by utilizing advanced CMOS
process technology. The GM71V(S)16400C/CL
offers Fast Page Mode as a high speed access
mode. Multiplexed address inputs permit the
GM71V(S)16400C/CL to be packaged in a
standard 300 mil 24(26) pin SOJ, and a standard
300 mil 24(26) pin plastic TSOP II. The
package size provides high system bit densities
and is compatible with widely available
automated testing and insertion equipment.
System oriented features include single power
supply 3.3V+/-0.3V tolerance, direct interfacing
capability with high performance logic families
such as Schottky TTL.
Features
* 4,194,304 Words x 4 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (3.3V+/-0.3V)
* Fast Access Time & Cycle Time
* Low Power
Active : 324/288/252mW (MAX)
Standby : 7.2mW (CMOS level : MAX)
: 0.36mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 4096 Refresh Cycles/64ms
* 4096 Refresh Cycles/128ms (L-version)
* Self Refresh Operation (L-version)
* Battery backup operation (L-version)
* Test function : 16bit parallel test mode
24(26) SOJ
(Top View)
Pin Configuration
V
CC
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
8
9
10
11
12
13
14
15
16
17
18
19
21
22
23
24
25
26
24(26) TSOP II
V
CC
I/O1
I/O2
WE
RAS
A11
A10
A0
A1
A2
A3
V
CC
V
SS
I/O4
I/O3
CAS
OE
A9
A8
A7
A6
A5
A4
V
SS
1
2
3
4
5
6
8
9
10
11
12
13
14
15
16
17
18
19
21
22
23
24
25
26
GM71V(S)16400C/CL-5
GM71V(S)16400C/CL-6
GM71V(S)16400C/CL-7
t
RAC
t
CAC
t
RC
t
PC
50
60
13
15
90
110
35
40
70
18
130
45
(Unit: ns)
GM71V16400C
GM71VS16400CL
Rev 0.1 / Apr'01
GM71V16400C
GM71VS16400CL
Rev 0.1 / Apr'01
Pin Description
Pin
Function
Pin
Function
A0-A11
A0-A11
I/O1-I/O4
V
CC
V
SS
Address Inputs
Refresh Address Inputs
Data Input/Data Output
Row Address Strobe
Column Address Strobe
Read/Write Enable
Output Enable
Power (+3.3V)
Ground
Ordering Information
Type No.
Access Time
Package
GM71V(S)16400CJ/CLJ-5
GM71V(S)16400CJ/CLJ-6
GM71V(S)16400CJ/CLJ-7
50ns
60ns
70ns
300 Mil
24(26) Pin
Plastic SOJ
GM71V(S)16400CT/CLT-5
GM71V(S)16400CT/CLT-6
GM71V(S)16400CT/CLT-7
50ns
60ns
70ns
300 Mil
24(26) Pin
Plastic TSOP II
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
T
A
T
STG
V
IN/OUT
V
CC
I
OUT
0 ~ 70
-55 ~ 125
-0.5 ~ Vcc+0.5(<=4.6V(MAX))
-0.5 ~ 4.6
50
Ambient Temperature under Bias
Storage Temperature
Voltage on any Pin Relative to V
SS
Supply Voltage Relative to V
SS
Short Circuit Output Current
V
V
mA
P
D
1.0
Power Dissipation
W
Note: All voltage referred to Vss.
RAS
CAS
Recommended DC Operating Conditions (T
A
= 0 ~ 70C)
Symbol
Parameter
Unit
V
CC
V
IH
V
IL
Supply Voltage
Input High Voltage
Input Low Voltage
V
V
V
Max
3.6
Vcc+0.3
0.8
Typ
3.3
-
-
Min
3.0
2.0
-0.3
OE
C
C
NC
No Connection
WE
GM71V16400C
'01
DC Electrical Characteristics (V
CC
= 3.3V+/-0.3V, Vss = 0V, T
A
= 0 ~ 70C)
Symbol
Parameter
Note
V
OH
V
OL
Output Level
Output "H" Level Voltage (I
OUT
=
-2mA
)
Unit
Max
V
CC
0.4
Min
2.4
0
Output "L" Level Voltage (I
OUT
=
2
mA)
I
CC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling
:
t
RC
=
t
RC
min)
I
CC2
Standby Current (TTL)
Power Supply Standby Current
,
D
High-Z)
I
Average Power Supply Current
RAS Only Refresh Mode
t
=
min)
I
CC5
Power Supply Standby Current
(RAS, CAS >= V
CC
- 0.2V, D
OUT
= High-Z)
-
I
CC6
CAS-before-RAS Refresh Current
t
=
min)
100
-
I
L(I)
10
-10
I
L(O)
10
Input Leakage Current
Any Input (0V
<=
V
IN
<=
4.6V)
(D
is Disabled, 0V
<=
<= 4.
6V)
Self-Refresh Mode Current
(RAS, CAS<=0.2V
,
=
High-Z, CMOS interface)
200
Note: 1. I
I
2. Address can be changed once or less while RAS = V
3. Address can be changed once or less while CAS = V
4. L - Version.
Fast Page Mode Current
Fast Page Mode
(
PC
= t
PC
min)
2
-
90
-
50ns
60ns
70ns
80
70
-
-
-
90
-
50ns
60ns
70ns
80
70
-
-
80
-
50ns
60ns
70ns
70
60
-
V
V
mA
uA
uA
uA
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, t
RC
= 31.3us
,
t
RAS
<=
0.3
us,
D
OUT
=
High-Z, CMOS interface)
-
uA
uA
4
mA
mA
mA
2
1, 3
mA
90
-
ns
60
70ns
70
-
5
1
Standby Current RAS = V
IH
CAS = V
IL
D
OUT
=
Enable
GM71V16400C
GM71VS16400CL
Rev 0.1 / Apr'01
Capacitance (V
CC
= 3.3V+/-0.3V, T
A
= 25C)
AC Characteristics (V
CC
= 3.3V+/-0.3V, Vss=0V, T
A
= 0 ~ 70C, Notes 1, 2, 3,19,20)
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
Symbol
Parameter
Note
C
I1
C
I2
C
I/O
Input Capacitance (Address)
Input Capacitance (Clocks)
Output Capacitance (Data-In/Out)
1
1
1, 2
Unit
pF
pF
pF
Max
5
7
7
Min
-
-
-
Input rise and fall times : 2ns
Input timing reference levels : 0.8V, 2.0V
Output timing reference levels : 0.8V, 2.0V
Output load : 1 TTL gate + C
L
(100pF)
(Including scope and jig)
Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = V
IH
to disable D
OUT
.
Test Conditions
Symbol
Parameter
Note
Max
Unit
Min
Max
Min
Max
Min
t
RC
Random Read or Write Cycle Time
90
-
110
-
130
-
t
RP
RAS Precharge Time
30
-
40
-
50
-
t
RAS
RAS Pulse Width
50
10,000
60
10,000
70
10,000
t
CAS
CAS Pulse Width
10,000
10,000
10,000
15
18
t
ASR
Row Address Set up Time
0
-
-
-
0
0
t
RAH
Row Address Hold Time
8
-
-
-
10
10
t
ASC
Column Address Set-up Time
0
-
-
-
0
0
t
CAH
Column Address Hold Time
-
-
-
10
15
t
RCD
RAS to CAS Delay Time
18
45
45
52
20
20
4
t
RAD
RAS to Column Address Delay Time
13
30
30
35
15
15
5
t
RSH
RAS Hold Time
13
-
-
-
15
18
t
CSH
CAS Hold Time
50
-
-
-
60
70
t
CRP
CAS to RAS Precharge Time
5
-
-
-
5
5
t
T
Transition Time (Rise and Fall)
3
50
50
50
3
3
8
t
DZO
OE Delay Time from D
IN
0
-
-
-
0
0
t
DZC
CAS Delay Time from D
IN
0
-
-
-
0
0
GM71V(S)16400
C/CL-5
OE to D
IN
Delay Time
13
-
-
-
15
18
6
7
7
t
CP
CAS Precharge Time
8
-
10
-
10
-
t
ODD
GM71V(S)16400
C/CL-6
GM71V(S)16400
C/CL-7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
13
8
GM71V16400C
Rev 0.1 / Apr'
Read Cycle
Symbol
Unit
Max
Min
Min
-
60
-
70
ns
-
15
-
18
ns
-
30
-
35
ns
0
-
0
-
ns
0
-
-
ns
0
5
-
-
ns
5
30
-
-
ns
35
0
-
-
ns
0
30
-
-
ns
35
-
15
15
ns
-
-
15
-
18
ns
3
-
-
ns
3
3
-
-
ns
3
-
15
15
ns
-
15
-
-
ns
18
Access Time from RAS
Access Time from Address
Read Command Setup Time
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
Access Time from CAS
CAS to Output in low-Z
Column Address to CAS Lead Time
Output Buffer Turn-off Time
Access Time from OE
Output Data Hold Time
Output Data Hold Time from OE
Output Buffer Turn-off Time to OE
CAS to D
IN
Delay Time
GM71V(S)16400
C/CL-6
GM71V(S)16400
C/CL-7
Write Cycle
Max
Min
-
50
-
13
-
25
0
-
0
-
5
-
25
-
0
-
25
-
-
13
-
13
3
-
3
-
-
13
13
-
GM71V(S)16400
C/CL-5
Symbol
Parameter
Max
Unit
Min
Max
Min
0
-
0
-
10
-
15
-
10
-
10
-
15
-
18
-
15
-
-
18
0
-
-
0
t
RAC
t
CAC
t
AA
t
RCS
t
RCH
t
RRH
t
RAL
t
CLZ
t
CAL
t
OFF
t
OAC
t
OH
t
OHO
t
OEZ
t
CDD
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
10
-
-
15
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
Note
13
13
9,10,21
10,11,
18,21
10,12,
18,21
14
10
14
6
Note
16
16
15
GM71V(S)16400
C/CL-6
GM71V(S)16400
C/CL-7
ns
Min
0
-
-
8
-
-
-
0
-
-
Max
GM71V(S)16400
C/CL-5
ns
ns
ns
ns
ns
ns
8
13
13
8
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