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Электронный компонент: HMS88T1604

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HMS88T1602/04/08
MAY 2001
1/2
2001 Hynix Semiconductor Inc. All right reserved.
HMS88T1602/04/08
8-BIT CMOS MCU BASED SAFEGUARDED SMARTCARD IC
WITH 2048/4096/8176 BYTES EEPROM
FEATURES
Single Supply Voltage
- V
CC
Range: 4.5V ~ 5.5V
8 Bit Architecture CPU
16K Bytes User ROM
1.5K Bytes System ROM
480 Bytes RAM
2048/4096/8176 Bytes EEPROM, Sector Combi-
native:
- Highly Reliable CMOS EEPROM Technology
- 10 Years Data Retention
- 300,000 Erase/Write Cycles Endurance
- Protected One Time Programmable Block
(32 or 64 Bytes)
- Separate Write and Erase Cycle For fast "1"
Programming
- 1 to 32 Bytes Block Erase or Write in a Single
Cycle Programming
Serial Access, ISO 7816-3 Compatible
Standby Mode for Power Saving
Up to 5 MHz Internal Operating Frequency
Contact Assignment Compatible ISO7816-2
ESD Protection Greater than 5,000V
High Security Features
Figure 1. Pin Configuration
V
CC
Supply Voltage
RST
Reset
CLK
Clock
RFU
Reserved for future
GND
Ground
I/O1
Data Input/Output
I/O2
Data Input/Output(Option)
Table 2. Contact Format
C1
C2
C3
C4
C5
C6
C7
C8
V
CC
RST
CLK
IO2
GND
RFU
IO1
RFU
(OPTION)
/V
PP
HMS88T1602/04/08
HMS88T1602/04/08
2/2
MAY 2001
2001 Hynix Semiconductor Inc. All right reserved.
INTRODUCTION
The HMS88T1602/04/08, a member of the standard
HMS88T16XYZ family, are a serial access microcon-
trollers especially designed for very large volume and
cost competitive smart cards applications.
The HMS88T1602/04/08 are based on an 8 bit CPU
core and include on chip memories: 480 bytes RAM,
16K bytes ROM, 2048/4096/8176 bytes EEPROM
structed in two main sectors to be used in different
combination, as described below.
Reliability data related to the HMS88T1602/04/08
products manufactured using Hynix 0.7
m CMOS
EEPROM technology guarantees data retention up to
10 years and endurance up to 300,000 erase/write
cycles.
As all the other HMS88T16XYZ family members, the
HMS88T1602/04/08 are fully compatible with the ISO
standards for smart card applications.
The HMS88T1602/04/08 can be delivered as:
either in sawn or un-sawn 6inch wafers, 180 micron
thickness as well as in micromodule package.
Figure 3. HMS88T1602/04/08 Block Diagram
8 BIT CPU
RAM
480 BYTES
SYSTEM
ROM
U S E R R O M
16K BYTES
MEMORY ACCESS CONTROL MATRIX
INTERNAL BUS
SERIAL I/O's
INTERFACE
RANDOM NUMBER
GENERATOR
SECURITY LOGIC
I/O 2
I/O 1
CLK
RST
V
CC
GND
V
PP
GENERATION
SECTOR COMBINATIVE
S ector
A
S ecto r
B
EEPROM 2048/4096/8176 BYTES