This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.04 /Jun. 01 Hynix Semiconductor
HY62LF16101C Series
64Kx16bit full CMOS SRAM
Document Title
64K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM
Revision History
Revision No History Draft Date Remark
03 Divide output load into a couple of factors Dec.16. 2000 Final
- tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
- Others
Add marking information
04 Change Part Number Jun.07. 2001
- 2.5V Version : Q -> L
- HY62QF16101C -> HY62LF16101C
HY62LF16101C Series
Rev.04 /Jun. 01
2
DESCRIPTION
The HY62LF16101C is a high speed, super low
power and 1M bit full CMOS SRAM organized as
65,536 words by 16bit. The HY62LF16101C uses
high performance full CMOS process technology
and designed for high speed low power circuit
technology. It is particularly well suited for used in
high density low power system application. This
device has a data retention mode that guarantees
data to remain valid at a minimum power supply
voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
-. 1.2V(min) data retention
Standard pin configuration
-. 48 - FBGA
Product
Voltage
Speed
Operation
Standby Current(uA)
No.
(V)
(ns)
Current/Icc(mA)
LL
SL
Temperature
(
C)
HY62LF16101C
2.3~2.7 70/85/100
3
3
1
0~70
HY62LF16101C-I
2.3~2.7 70/85/100
3
3
1
-40~85(I)
Note 1. Blank : Commercial, I : Industrial
2. Current value is max.
PIN CONNECTION BLOCK DIAGRAM
/LB
IO9
IO10
/OE A0
A1
A2
NC
/UB A3
A4
/CS IO1
IO11 A5
A6
IO2 IO3
Vss IO12 NC
A7
IO4 Vcc
Vcc IO13 NC
NC
IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC
A12 A13 /WE IO8
NC
A8
A9
A10 A11 NC
48-FBGA(Top View)
PIN DESCRIPTION
Pin Name
Pin Function
Pin Name
Pin Function
/CS
Chip Select
I/O1~I/O16 Data Inputs / Outputs
/WE
Write Enable
A0~A15
Address Inputs
/OE
Output Enable
Vcc
Power(2.3V~2.7V)
/LB
Low Byte Control(I/O1~I/O8)
Vss
Ground
/UB
Upper Byte Control(I/O9~I/O16) NC
No Connection
MEMORY ARRAY
128K x 16
ROW
DECODER
SENSE AMP
WRITE DRIVER
DATA I/O
BUFFER
I/O1
I/O16
COLUMNDECODER
CONTROL
LOGIC
ADD INPUT BUFFER
A0
A15
/CS
/OE
/LB
/UB
/WE
HY62LF16101C Series
Rev.04 /Jun. 01
2
ORDERING INFORMATION
Part No.
Speed
Power Temp.
Package
HY62LF16101CLLF
70/85/100
LL-part
FBGA
HY62LF16101CSLF
70/85/100
SL-part
FBGA
HY62LF16101CLLF-I
70/85/100
LL-part
I
FBGA
HY62LF16101CSLF-I
70/85/100
SL-part
I
FBGA
Note 1. Blank : Commercial, I : Industrial
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Remark
V
IN,
V
OUT
Input/Output Voltage
-0.2 to 3.6
V
Vcc
Power Supply
-0.2 to 4.6
V
T
A
Operating Temperature
0 to 70
C
HY62LF16101C
-40 to 85
C
HY62LF16101C-I
T
STG
Storage Temperature
-55 to 150
C
P
D
Power Dissipation
1.0
W
T
SOLDER
Lead Soldering Temperature & Time
260 10
C sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
I/O
I/O1~I/O8
I/O9~I/O16
H
X
X
X
X Deselected
High-Z
High-Z
Stand by
X
X
X
H
H Deselected
High-Z
High-Z
Stand by
L
H
H
L
X Output Disabled
High-Z
High-Z
Active
L
H
H
X
L Output Disabled
High-Z
High-Z
Active
L
H
L
L
H
D
OUT
Hi-Z
H
L Read
Hi-Z
D
OUT
Active
L
L
D
OUT
D
OUT
L
L
X
L
H
D
IN
Hi-Z
H
L Write
Hi-Z
D
IN
Active
L
L
D
IN
D
IN
Note:
1. H=V
IH
, L=V
IL
, X=don't care(V
IH
or V
IL)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When UB is LOW, data is written or read to the Upper byte, I/O 9 -I/O 16.
/CS /WE
/OE /LB /UB
Mode
Power
HY62LF16101C Series
Rev.04 /Jun. 01
3
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Typ.
Max.
Unit
Vcc
Supply Voltage
2.3
2.5
2.7
V
Vss
Ground
0
0
0
V
V
IH
Input High Voltage
2.0
-
Vcc+0.3
V
V
IL
Input Low Voltage
-0.3
(1)
-
0.6
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
2. Undershoots are sampled and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.3V~2.7V, T
A
= 0
C to 70
C / -40
C to 85
C (I)
Sym
Parameter
Test Condition
Min. Typ. Max. Unit
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
uA
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL,
/
UB
=
/LB = V
IH
-1
-
1
uA
Icc
Operating Power Supply
/CS = V
IL
, V
IN
= V
IH
or V
IL,
Current
I
I/O =
0mA
-
-
3
mA
I
CC1
Average Operating Current
/CS < 0.2V,
1us
Cycle
Time,100% Duty, I
I/O =
0mA,
V
IN
<
0.2V
-
-
4
mA
/CS = V
IL,
V
IN
= V
IH
or V
IL
Cycle Time = Min. 100% Duty
I
I/O =
0mA
-
-
30
mA
I
SB
TTL Standby Current
/CS = V
IH
or
(TTL Input)
/UB = /LB = V
IH,
V
IN
= V
IH
or V
IL
-
-
0.3
mA
Standby Current
/CS > Vcc - 0.2V or
I
SB1
(CMOS Input)
/UB = /LB > Vcc - 0.2V,
SL
-
-
1
uA
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
LL
-
0.5
3
uA
V
OL
Output Low Voltage
I
OL
= 0.5mA
-
-
0.4
V
V
OH
Output High Voltage
I
OH
= -0.5mA
2.0
-
-
V
Note : 1.Typical values are at Vcc = 2.5V, T
A
= 25
C
2.Typical values are sampled and not 100% tested.
CAPACITANCE
(Temp = 25
C, f= 1.0MHz)
Symbol
Parameter
Condition
Max.
Unit
C
IN
Input Capacitance(Add, /CS, /UB, /LB, /WE, /OE) V
IN
= 0V
8
pF
C
OUT
Output Capacitance(I/O)
V
I/O
= 0V
10
pF
Note : These parameters are sampled and not 100% tested
HY62LF16101C Series
Rev.04 /Jun. 01
4
AC CHARACTERISTICS
Vcc = 2.3~2.7V, T
A
= 0
C to 70
C / -40
C to 85
C (I), unless otherwise specified
-70
-85
-10
Min. Max. Min. Max. Min
Max.
1 tRC
Read Cycle Time
70
-
85
-
100
-
ns
2 tAA
Address Access Time
-
70
-
85
-
100
ns
3 tACS
Chip Select Access Time
-
70
-
85
-
100
ns
4 tOE
Output Enable to Output Valid
-
40
-
45
-
50
ns
5 tBA
/LB, /UB Access Time
-
70
-
85
-
100
ns
6 tCLZ
Chip Select to Output in Low Z
10
-
10
-
20
-
ns
7 tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
ns
8 tBLZ
/LB, /UB Enable to Output in Low Z
5
-
5
-
5
-
ns
9 tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
30
ns
10 tOHZ
Out Disable to Output in High Z
0
30
0
30
0
30
ns
11 tBHZ
/LB, /UB Disable to Output in High Z
0
30
0
30
0
30
ns
12 tOH
Output Hold from Address Change
10
-
10
-
15
-
ns
13 tWC
Write Cycle Time
70
-
85
-
100
-
ns
14 tCW
Chip Selection to End of Write
60
-
70
-
80
-
ns
15 tAW
Address Valid to End of Write
60
-
70
-
80
-
ns
16 tBW
/LB, /UB Valid to End of Write
60
-
70
-
80
-
ns
17 tAS
Address Set-up Time
0
-
0
-
0
-
ns
18 tWP
Write Pulse Width
50
-
55
-
75
-
ns
19 tWR
Write Recovery Time
0
-
0
-
0
-
ns
20 tWHZ Write to Output in High Z
0
25
0
30
0
35
ns
21 tDW
Data to Write Time Overlap
30
-
35
-
45
-
ns
22 tDH
Data Hold from Write Time
0
-
0
-
0
-
ns
23 tOW
Output Active from End of Write
5
-
5
-
10
-
ns
AC TEST CONDITIONS
T
A
= 0
C to 70
C / -40
C to 85
C (I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.1V
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
CL = 5pF + 1TTL Load
Output Load
Others
CL = 30pF + 1TTL Load
AC TEST LOADS
D
OUT
3345 Ohm
CL(1)
3067 Ohm
V
TM=2.3V
Note
1. Including jig and scope capacitance
READ CYCLE
WRITE CYCLE
Symbol
Parameter
#
Unit
HY62LF16101C Series
Rev.04 /Jun. 01
5
TIMING DIAGRAM
READ CYCLE 1(Note 1,4)
READ CYCLE 2(Note 1,2,4)
tRC
tAA
Data Valid
Previous Data
tOH
tOH
ADDR
Data
Out
READ CYCLE 3(Note 1,2,4)
/CS
/UB, /LB
tACS
Data Valid
tCLZ(3)
tCHZ(3)
Data
Out
Notes:
1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS1 and low /UB and/or /LB.
2. /OE = V
IL
3. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
4. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
ADDR
tRC
/CS
tAA
tACS
tOH
Data Valid
High-Z
Data
Out
/UB ,/ LB
/OE
tBA
tOE
tCLZ
(3)
tBLZ
(3)
tOLZ
(3)
tCHZ
(3)
tBHZ
(3)
tOHZ
(3)
HY62LF16101C Series
Rev.04 /Jun. 01
6
WRITE CYCLE 1(1,4,8) (/WE Controlled)
WRITE CYCLE 2 (Note 1,4,8) (/CS Controlled)
Notes:
1. A write occurs during the overlap of a low /WE, a low /CS1 and low /UB and/or /LB.
2. tWR is measured from the earlier of /CS, /LB, /UB, or /WE going high to the end of write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the
output must not be applied.
4. If the /CS, /LB and /UB low transition occur simultaneously with the /WE low transition or after the
/WE transition, outputs remain in a high impedance state.
5. Q(data out) is the same phase with the write data of this write cycle.
6. Q(data out) is the read data of the next address.
7. Transition is measured +200mV from steady state.
This parameter is sampled and not 100% tested.
8. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
Data Valid
ADDR
Data
Out
/
CS
/
UB
,
/
LB
/
WE
tWC
tCW
tWR
(2)
tBW
tAW
tWP
Data In
High-Z
tAS
tWHZ
(3,7)
tDW
tDH
tOW
(5)
(6)
Data Valid
ADDR
Data
Out
/
CS
/
UB
,
/
LB
/
WE
tWC
tCW
tWR
(2)
tBW
tAW
tWP
Data In
tDW
tDH
High-Z
High-Z
tAS
HY62LF16101C Series
Rev.04 /Jun. 01
7
DATA RETENTION ELECTRIC CHARACTERISTIC
T
A
=0
C to 70
C / -40
C to 85
C (I)
Symbol
Parameter
Test Condition
Min
Typ Max Unit
V
DR
Vcc for Data Retention
/CS > Vcc - 0.2V or
1.2
-
2.7
V
/UB = /LB > Vcc-0.2V,
V
IN
> Vcc - 0.2V or V
IN
< Vss + 0.2V
I
CCDR
Data Retention Current
Vcc=1.5V, /CS > Vcc - 0.2V,
LL
-
0.5
2
uA
/UB = /LB > Vcc - 0.2V
V
IN
> Vcc - 0.2V or
SL
-
-
1
uA
V
IN
< Vss + 0.2V
tCDR
Chip Deselect to Data
Retention Time
See Data Retention Timing
Diagram
0
-
-
ns
tR
Operating Recovery Time
tRC
(2)
-
-
ns
Notes:
1. Typical values are under the condition of T
A
= 25
C.
2. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM
CS
VDR
CS > VCC-0.2V
tCDR
tR
VSS
VCC
2.3V
DATA RETENTION MODE
or /UB &/LB
or /UB = /LB > Vcc 0.2V
HY62LF16101C Series
Rev.04 /Jun. 01
8
PACKAGE INFORMATION
48ball Fine-Pitch Ball Grid Array Package(F)
BOTTOM VIEW
TOP VIEW
B
A
A1 CORNER
B1/2
INDEX AREA
6
5
4
3
2
1
A
A
B
C
D
C
C1
E
F
G
C1/2
C1/2
H
B1/2
B1
SIDE VIEW
5
E1
E2
C
E
SEATING PLANE
4
A
r
3 D(DIAMETER)
Symbol
Min.
Typ.
Max.
A
-
0.75
-
B
-
3.75
-
B1
6.1
6.2
6.3
C
-
5.25
-
C1
6.2
6.3
6.4
D
0.3
0.35
0.4
E
0.9
1.0
1.1
E1
0.7
0.75
0.8
E2
0.2
0.25
0.3
r
-
-
0.1
Note
1. DIMENSIONING AND TOLERANCING PER ASME Y14. SM-1994.
2. ALL DIMENSIONS ARE MILLIMETERS.
3. DIMENSION "D" IS MEASURED AT THE MAXIMUM SOLDER
BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE
CROWN OF THE SOLDER BALLS.
5. THIS IS A CONTROLLING DIMENSION.
HY62LF16101C Series
Rev.04 /Jun. 01
9
MARKING INSTRUCTION
Package
Marking Example
H
Y
L
F
6
1
1
C
c
s
s
t
y
y
w
w
p
x
x
x
x
x
K
O
R
FBGA
Index
HYLF611Cc
: Part Name
c
: Power Consumption
- L
: Low Low Power
- S
: Super Low Power
ss
: Speed
- 70
: 70ns
- 85
: 85ns
- 10
: 100ns
t
: Temperature
- C
: Industrial ( -0 ~ 70
C )
- I
: Industrial ( -40 ~ 85
C )
yy
: Year (ex : 00 = year 2000, 01= year 2001)
ww
: Work Week ( ex : 12 = work week 12 )
p
: Process Code
xxxxx
: Lot No.
KOR
: Origin Country
Note
- Capital Letter
: Fixed Item
- Small Letter
: Non-fixed Item
Package
Marking Example
H
Y
L
F
6
1
1
C
c
s
s
t
y
y
w
w
p
x
x
x
x
x
K
O
R
FBGA
Index
HYLF611Cc
: Part Name
c
: Power Consumption
- L
: Low Low Power
- S
: Super Low Power
ss
: Speed
- 70
: 70ns
- 85
: 85ns
- 10
: 100ns
t
: Temperature
- C
: Industrial ( -0 ~ 70
C )
- I
: Industrial ( -40 ~ 85
C )
yy
: Year (ex : 00 = year 2000, 01= year 2001)
ww
: Work Week ( ex : 12 = work week 12 )
p
: Process Code
xxxxx
: Lot No.
KOR
: Origin Country
Note
- Capital Letter
: Fixed Item
- Small Letter
: Non-fixed Item
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