This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.02 / Feb. 03 Hynix
Semiconductor
HY62UF16404E Series
256Kx16bit full CMOS SRAM
Document Title
256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM
Revision History
Revision No History Draft Date Remark
00 Initial Draft Dec.20.2001 Preliminary
01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002 Preliminary
02 Add Package Size Option (6.0mmx8.0mm) Feb.18.2003 Final
HY62UF16404E Series
Rev.02 / Feb. 03
2
DESCRIPTION
The HY62UF16404E is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
256K words by 16bits. The HY62UF16404E uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery
backup
-. 1.2V(min) data retention
Standard pin configuration
-. 48-ball FBGA
Standby
Current(uA)
Product No.
Voltage
(V)
Speed (ns)
Operation
Current/Icc(mA)
SL LL
Temperature
(
C)
HY62UF16404E-I 2.7~3.3
55/70
3
6
10
-40~85
Note 1. I : Industrial
2. Current value is max.
PIN CONNECTION
BLOCK DIAGRAM
PIN DESCRIPTION
Pin Name
Pin Function
Pin Name
Pin Function
/CS
Chip Select
I/O1~I/O16
Data Inputs/Outputs
/WE
Write Enable
A0~A17
Address Inputs
/OE
Output Enable
Vcc
Power (2.7~3.3V)
/LB
Lower Byte Control (I/O1~I/O8)
Vss
Ground
/UB
Upper Byte Control (I/O9~I/O16)
NC No
Connection
MEMORY ARRAY
256K x 16
ROW
DECODER
SEN
SE AM
P
W
R
ITE D
R
I
VER
DATA I/O
BUFFER
I/O1
I/O8
I/O9
I/O16
COL
U
MN
DE
CODE
R
BLOC
K
DE
CODE
R
P
R
E
DE
CODE
R
A
DD INP
U
T
BUFFER
A0
A17
/CS
/OE
/LB
/UB
/WE
1 2 3 4 5 6
A
B
C
D
E
F
G
H
FBGA
/LB
IO9
IO10
/OE A0 A1 A2 NC
/UB A3 A4 /CS
IO1
IO11 A5
A6 IO2 IO3
Vss IO12 A17 A7 IO4 Vcc
Vcc IO13 NC A16 IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
IO16 NC A12 A13 /WE IO8
NC
A8
A9 A10 A11 NC
HY62UF16404E Series
Rev.02 / Feb. 03
2
ORDERING INFORMATION
Part No.
Speed
Power
Temp
.
Package
HY62UF16404E-SF(I) 55/70
SL-part
I
FBGA
HY62UF16404E-DF(I) 55/70
LL-part
I
FBGA
Note 1. I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol Parameter
Rating
Unit
Remark
V
IN,
V
OUT
Input/Output Voltage
-0.3 to V
CC
+0.3V V
Vcc
Power Supply
-0.3 to 3.6
V
T
A
Operating Temperature
-40 to 85
C
HY62UF16404E-I
T
STG
Storage Temperature
-55 to 150
C
P
D
Power
Dissipation
1.0
W
T
SOLDER
Ball Soldering Temperature & Time
260
10
Csec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
I/O Pin
/CS /WE /OE /LB
/UB
Mode
I/O1~I/O8 I/O9~I/O16
Power
H X X X
X
X X X H
H
Deselected High-Z High-Z Standby
L X
L H H
X L
Output Disabled
High-Z
High-Z
Active
L H
D
OUT
High-Z
H L
High-Z
D
OUT
L H L
L L
Read
D
OUT
D
OUT
Active
L H
D
IN
High-Z
H L
High-Z
D
IN
L L X
L L
Write
D
IN
D
IN
Active
Note:
1. H=V
IH
, L=V
IL
, X=don't care (V
IL or
V
IH
)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8.
When /UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
HY62UF16404E Series
Rev.02 / Feb. 03
3
RECOMMENDED DC OPERATING CONDITION
Symbol Parameter Min. Typ Max. Unit
Vcc Supply
Voltage
2.7 3.0
3.3
V
Vss Ground
0
0
0
V
V
IH
Input High Voltage
2.2
-
Vcc+0.3
V
V
IL
Input Low Voltage
-0.3
1.
- 0.6
V
Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns
2. Undershoot is sampled, not 100% tested.
DC ELECTRICAL CHARACTERISTICS
T
A
= -40
C to 85C
Sym Parameter
Test
Condition
Min
Typ
1.
Max
Unit
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
uA
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL
or
/
UB
=
V
IH ,
/LB = V
IH
-1 - 1 uA
Icc
Operating Power Supply Current
/CS = V
IL
,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
3 mA
55ns
20
mA
/CS = V
IL,
V
IN
= V
IH
or V
IL,
Cycle Time = Min,
100% Duty, I
I/O =
0mA
70ns
15
mA
I
CC1
Average Operating Current
/CS < 0.2V
,
V
IN
< 0.2V or V
IN
> Vcc-0.2V
,
Cycle Time = 1us,
100% Duty, I
I/O =
0mA
2
mA
I
SB
Standby
Current
(TTL Input)
/CS = V
IH
or /UB, /LB = V
IH
V
IN
= V
IH
or V
IL
300
uA
SL 0.2 6 uA
I
SB1
Standby
Current
(CMOS Input)
/CS > Vcc - 0.2V or
/UB, /LB > Vcc - 0.2V
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
LL 0.2 10 uA
V
OL
Output
Low
I
OL
= 2.1mA
-
-
0.4
V
V
OH
Output
High
I
OH =
-1.0mA
2.4
-
-
V
Note
1. Typical values are at Vcc = 3.0V T
A
= 25
C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25
C, f= 1.0MHz)
Symbol Parameter Condition
Max.
Unit
C
IN
Input Capacitance(Add, /CS,/LB,/UB, /WE, /OE)
V
IN
= 0V
8
pF
C
OUT
Output
Capacitance(I/O)
V
I/O
= 0V
10
pF
Note : These parameters are sampled and not 100% tested
HY62UF16404E Series
Rev.02 / Feb. 03
4
AC CHARACTERISTICS
T
A
= -40
C to 85C, unless otherwise specified
55ns 70ns
#
Symbol
Parameter
Min. Max.
Min. Max.
Unit
1
tRC
Read Cycle Time
55
-
70
-
ns
2
tAA
Address Access Time
-
55
-
70
ns
3
tACS
Chip Select Access Time
-
55
-
70
ns
4
tOE
Output Enable to Output Valid
-
30
-
35
ns
5
tBA
/LB, /UB Access Time
-
55
-
70
ns
6
tCLZ
Chip Select to Output in Low Z
10
-
10
-
ns
7
tOLZ
Output Enable to Output in Low Z
5
-
5
-
ns
8
tBLZ
/LB, /UB Enable to Output in Low Z
10
-
10
-
ns
9
tCHZ
Chip Deselection to Output in High Z
0
20
0
25
ns
10 tOHZ
Out Disable to Output in High Z
0
20
0
25
ns
11 tBHZ
/LB, /UB Disable to Output in High Z
0
20
0
25
ns
12 tOH
Output Hold from Address Change
10
-
10
-
ns
13 tWC
Write Cycle Time
55
-
70
-
ns
14 tCW
Chip Selection to End of Write
50
-
60
-
ns
15 tAW
Address Valid to End of Write
50
-
60
-
ns
16 tBW
/LB, /UB Valid to End of Write
50
-
60
-
ns
17 tAS
Address Set-up Time
0
-
0
-
ns
18 tWP
Write Pulse Width
45
-
50
-
ns
19 tWR
Write Recovery Time
0
-
0
-
ns
20 tWHZ
Write to Output in High Z
0
20
0
20
ns
21 tDW
Data to Write Time Overlap
25
-
30
-
ns
22 tDH
Data Hold from Write Time
0
-
0
-
ns
23 tOW
Output Active from End of Write
5
-
5
-
ns
AC TEST CONDITIONS
T
A
= -40
C to 85C, unless otherwise specified
Parameter Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
tCLZ, tOLZ, tBLZ, tCHZ, tOHZ, tBHZ, tWHZ, tOW
CL = 30pF + 1TTL Load
Output Load
Others
CL = 30pF + 1TTL Load
AC TEST LOADS
D
OUT
1728 Ohm
CL(1)
1029 Ohm
V
TM
=2.8V
Note 1. Including jig and scope capacitance:
READ CYCLE
WRITE CYCLE
HY62UF16404E Series
Rev.02 / Feb. 03
5
TIMING DIAGRAM
READ CYCLE 1 (Note 1,4)
READ CYCLE 2 (Note 1,2,4)
tRC
tAA
Data Valid
Previous Data
tOH
tOH
ADDR
Data
Out
READ CYCLE 3(Note 1,2,4)
/CS
/UB, /LB
tACS
Data Valid
tCLZ(3)
tCHZ(3)
Data
Out
Notes:
1. A read occurs during the overlap of a low /OE, a high /WE, a low /CS and /UB and/or /LB .
2. /OE = V
IL
3. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are
not referenced to output voltage levels.
4. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
ADDR
tRC
/CS
tAA
tACS
tOH
Data Valid
High-Z
Data
Out
/UB ,/ LB
/OE
tBA
tOE
tCLZ
(3)
tBLZ
(3)
tOLZ
(3)
tCHZ
(3)
tBHZ
(3)
tOHZ
(3)
HY62UF16404E Series
Rev.02 / Feb. 03
6
WRITE CYCLE 1 (1,4,8) (/WE Controlled)
WRITE CYCLE 2 (Note 1,4,8) (/CS Controlled)
Data Valid
ADDR
Data
Out
/CS
/UB,/LB
/WE
tWC
tCW
tWR(2)
tBW
tAW
tWP
Data In
High-Z
tAS
tWHZ(3,7)
tDW tDH
tOW
(5)
(6)
Data Valid
ADDR
Data
Out
/CS
/UB,/LB
/WE
tWC
tCW
tWR
(2)
tBW
tAW
tWP
Data In
tDW
tDH
High-Z
High-Z
tAS
HY62UF16404E Series
Rev.02 / Feb. 03
7
Notes:
1. A write occurs during the overlap of a low /WE, a low /CS and a low /UB and/or /LB .
2. tWR is measured from the earlier of /CS, /LB, /UB, or /WE going high to the end of write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the
output must not be applied.
4. If the /CS, /LB and /UB low transition occur simultaneously with the /WE low transition or after the
/WE transition, outputs remain in a high impedance state.
5. Q(data out) is the same phase with the write data of this write cycle.
6. Q(data out) is the read data of the next address.
7. /CS in high for the standby, low for active
/UB and /LB in high for the standby, low for active
DATA RETENTION ELECTRIC CHARACTERISTIC
T
A
= -40
C to 85C
Symbol Parameter
Test
Condition
Min
Typ
1.
Max
Unit
V
DR
Vcc for Data Retention
/CS > Vcc - 0.2V or
/UB, /LB > Vcc - 0.2V,
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
1.2 - 3.3 V
SL - 0.1 3 uA
Iccdr
Data Retention Current
Vcc=1.5V,
/CS > Vcc - 0.2V or
/UB, /LB > Vcc - 0.2V
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
LL 0.1
6
uA
tCDR
Chip Deselect to Data
Retention Time
0 - -
ns
tR
Operating Recovery Time
See Data Retention Timing Diagram
tRC
- - ns
Notes:
1. Typical values are under the condition of T
A
= 25
C.
2. Typical value are sampled and not 100% tested
DATA RETENTION TIMING DIAGRAM
/CS
VDR
/CS >VCC-0.2V
tCDR
tR
VSS
VCC
2.7V
VIH
DATA RETENTION MODE
HY62UF16404E Series
Rev.02 / Feb. 03
8
PACKAGE INFORMATION (6.0mm X 7.0mm)
48ball Fine Pitch Ball Grid Array Package (F)
BOTTOM VIEW
TOP VIEW
B
A
A1 CORNER
INDEX AREA
6
5
4
3
2
1
A
A
B
C
D
C
C1
E
F
G
C1/2
H
B1/2
B1
SIDE VIEW
5
E1
E2
C
E
SEATING
PLANE
4
A
r
3 D(DIAMETER)
Symbol Min. Typ. Max.
A -
0.75
-
B -
3.75
-
B1 5.9 6.0 6.1
C -
5.25
-
C1 6.9 7.0 7.1
D 0.40 0.45 0.50
E 0.8 0.9 1.0
E1 - 0.55 -
E2 0.30 0.35 0.40
r - -
0.08
Note
1. DIMENSIONING AND TOLERANCING PER ASME Y14. 5M-1994.
2. ALL DIMENSIONS ARE MILLIMETERS.
3. DIMENSION "D" IS MEASURED AT THE MAXIMUM SOLDER
BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE
CROWN OF THE SOLDER BALLS.
5. THIS IS A CONTROLLING DIMENSION.
HY62UF16404E Series
Rev.02 / Feb. 03
9
PACKAGE INFORMATION (6.0mm X 8.0mm)
48ball Fine Pitch Ball Grid Array Package(F)
BOTTOM VIEW
TOP VIEW
B
A
A1 CORNER
B1/2
INDEX AREA
6
5
4
3
2
1
A
A
B
C
D
C
C1
E
F
G
C1/2
C1/2
H
B1/2
B1
SIDE VIEW
5
E1
E2
C
E
SEATING
PLANE
4
A
r
3 D(DIAMETER)
Symbol Min. Typ. Max.
A -
0.75
-
B -
3.75
-
B1 5.90 6.00 6.10
C -
5.25
-
C1 7.90 8.00 8.10
D 0.3
0.35
0.4
E 0.9 1.0
1.10
E1 0.75 0.80 0.85
E2 0.17 -
-
r - -
0.12
Note
1. DIMENSIONING AND TOLERANCING PER ASME Y14. 5M-1994.
2. ALL DIMENSIONS ARE MILLIMETERS.
3. DIMENSION "D" IS MEASURED AT THE MAXIMUM SOLDER
BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE
CROWN OF THE SOLDER BALLS.
5. THIS IS A CONTROLLING DIMENSION.
HY62UF16404E Series
Rev.02 / Feb. 03
10
MARKING INFORMATION
Package
Marking Example
H
Y
U
F
6
4
0
4
E
c
s
s
t
y
w
w
p
x
x
x
x
x
K
O
R
FBGA
Index
HYUF6404E
: Part Name
c
: Power Consumption
- D
: Low Low Power
- S
: Super Low Power
ss
: Speed
- 50
: 55ns
- 70
: 70ns
t
: Temperature
- I
: Industrial ( -40 ~ 85
C )
y
: Year (ex : 2 = year 2002, 3= year 2003)
ww
: Work Week ( ex : 12 = work week 12 )
p
: Process Code
- A (6.0mm X 7.0mm)
- B (6.0mm X 8.0mm)
xxxxx
: Lot No.
KOR
: Origin Country
Note
- Capital Letter
: Fixed Item
- Small Letter
: Non-fixed Item
Package
Marking Example
H
Y
U
F
6
4
0
4
E
c
s
s
t
y
w
w
p
x
x
x
x
x
K
O
R
FBGA
Index
HYUF6404E
: Part Name
c
: Power Consumption
- D
: Low Low Power
- S
: Super Low Power
ss
: Speed
- 50
: 55ns
- 70
: 70ns
t
: Temperature
- I
: Industrial ( -40 ~ 85
C )
y
: Year (ex : 2 = year 2002, 3= year 2003)
ww
: Work Week ( ex : 12 = work week 12 )
p
: Process Code
- A (6.0mm X 7.0mm)
- B (6.0mm X 8.0mm)
xxxxx
: Lot No.
KOR
: Origin Country
Note
- Capital Letter
: Fixed Item
- Small Letter
: Non-fixed Item
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