This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev.10 /Jan2002 Hynix Semiconductor
HY62UF16804A Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM
Revision History
Revision No History Draft Date Remark
04 Initial Revision History Insert Jul.02.2000 Preliminary
Revised
- Reliability Spec Deleted
05 Change AC Characteristics Oct.23.2000 Preliminary
- tBLZ : 5/5/5 ---> 10/10/10
06 Part Number is changed Nov.13.2000 Preliminary
- HY62UF16803A --> HY62UF16804A
07 Marking Instruction is inserted Dec.5.2000 Preliminary
08 Test Condition Changed Dec.16.2000 Preliminary
- I
LO
/ I
SB
/ I
SB1
/ V
DR
/ I
CCDR
Marking Istruction Inserted
09 Change Logo Apr.28.2001
- Hyundai
Hynix
10 Change DC Parameter Jan.28.2002
- Isb1(LL) : 40uA
25uA
- Isb1(Typ) : 8uA
1uA
- Icc : 5mA
4mA
- Icc1(1us) : 8mA
4mA
- Icc1(Min) : 50mA
40mA
Change Data Retention
- IccDR(LL) : 25uA
15uA
Change AC Parameter
- tOE : 35ns
25ns@55ns
: 40ns
35ns@70ns
- tCW : 50ns
45ns@55ns
- tAW : 50ns
45ns@55ns
- tBW : 50ns
45ns@55ns
- tWP : 45ns
40ns@55ns
- tCHZ : 30ns
20ns@55ns , 30ns
25ns@70ns
- tOHZ : 30ns
20ns@55ns , 30ns
25ns@70ns
- tBHZ : 30ns
20ns@55ns , 30ns
25ns@70ns
HY62UF16804A
Rev.10/Jan. 2002
2
DESCRIPTION
The HY62UF16804A is a high speed, super low
power and 8Mbit full CMOS SRAM organized as
524,288 words by 16bits. The HY62UF16804A
uses high performance full CMOS process
technology and is designed for high speed and
low power circuit technology. It is particularly well-
suited for the high density low power system
application. This device has a data retention
mode that guarantees data to remain valid at a
minimum power supply voltage of 1.2V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL/SL-part)
- 1.2V(min) data retention
Standard pin configuration
- 48-uBGA
Product
Voltage
Speed
Operation
Standby Current(uA) Temperature
No.
(V)
(ns)
Current/Icc(mA)
LL
SL
(
C)
HY62UF16804A-C 2.7~3.3 55/70/85
4
25
8
0~70
HY62UF16804A-I
2.7~3.3 55/70/85
4
25
8
-40~85
Note 1. C : Commercial, I : Industrial
2. Current value is max.
PIN CONNECTION
( Top View )
BLOCK DIAGRAM
PIN DESCRIPTION
Pin Name
Pin Function
Pin Name
Pin Function
/CS
Chip Select
I/O1~I/O16
Data Inputs / Outputs
/WE
Write Enable
A0~A18
Address Inputs
/OE
Output Enable
Vcc
Power(2.7V~3.3V)
/LB
Lower Byte Control(I/O1~I/O8)
Vss
Ground
/UB
Upper Byte Control(I/O9~I/O16) NC
No Connection
MEMORY ARRAY
512K x 16
ROW
DECODER
SENSE AMP
WRITE DRIVER
DATA I/O
BUFFER
I/O1
I/O8
I/O9
I/O16
COLUMN
DECODER
BLOCK
DECODER
PRE DECODER
ADD INPUT
BUFF
ER
ADD INPUT
BUFFER
ADD INPUT
BUFFER
A1,A2
A4,A6~A7
A9
A12
A15~A18
A8
A10
A13
A14
A0
A3
A5
A11
/CS
/OE
/LB
/UB
/WE
/
LB
IO9
IO10
/
OE
A0
A1
A2
NC
/
UB
A3
A4
/
CS
IO1
IO11
A5
A6
IO2
IO3
Vss IO12
A17
A7
IO4
Vcc
Vcc IO13
Vss A16
IO5
Vss
IO15
IO14
A14
A15
IO6
IO7
IO16
NC
A12
A13
/
WE
IO8
A18
A8
A9
A10
A11
NC
HY62UF16804A
Rev.10/Jan. 2002
2
ORDERING INFORMATION
Part No.
Speed
Power Package Temp.
HY62UF16804A-DMC
55/70/85 LL-part
uBGA
C
HY62UF16804A-SMC
55/70/85 SL-part
uBGA
C
HY62UF16804A-DMI
55/70/85 LL-part
uBGA
I
HY62UF16804A-SMI
55/70/85 SL-part
uBGA
I
Note 1. C : Commercial, I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
Rating
Unit
Remark
V
IN,
V
OUT
Input/Output Voltage
-0.3 to Vcc+0.3V
V
Vcc
Power Supply
-0.3 to 3.6
V
0 to 70
C
HY62UF16804A-C
T
A
Operating Temperature
-40 to 85
C
HY62UF16804A-I
T
STG
Storage Temperature
-55 to 150
C
P
D
Power Dissipation
1.0
W
T
SOLDER
Ball Soldering Temperature & Time
260
10
C
sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
I/O
/CS /WE /OE /LB /UB
Mode
I/O1~I/O8 I/O9~I/O16
Power
H
X
X
X
X Deselected
High-Z
High-Z
Standby
X
X
X
H
H Deselected
High-Z
High-Z
Standby
L
H
H
L
X Output Disabled
High-Z
High-Z
Active
L
H
H
X
L Output Disabled
High-Z
High-Z
Active
L
H
L
L
H Read
D
OUT
High-Z
Active
H
L
High-Z
D
OUT
L
L
D
OUT
D
OUT
L
L
X
L
H Write
D
IN
High-Z
Active
H
L
High-Z
D
IN
L
L
D
IN
D
IN
Note:
1. H=V
IH
, L=V
IL
, X=don't care(V
IH or
V
IL)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O1 -I/O8.
When /UB is LOW, data is written or read to the upper byte, I/O9 -I/O16.
HY62UF16804A
Rev.10/Jan. 2002
3
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min. Typ.
Max.
Unit
Vcc
Supply Voltage
2.7
3.0
3.3
V
Vss
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
-
Vcc+0.3
V
V
IL
Input Low Voltage
-0.3
(1)
-
0.6
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.7V~3.3V, T
A
= 0
C to 70
C/ -40
C to 85
C
Sym
Parameter
Test Condition
Min. Typ. Max. Unit
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
uA
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL,
/
UB
=
/LB = V
IH
-1
-
1
uA
Icc
Operating Power Supply
Current
/CS = V
IL
,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
-
-
4
mA
Cycle Time=Min,100% duty,
I
I/O =
0mA, /CS = V
IL,
V
IN
= V
IH
or V
IL
-
-
40
mA
Icc1
Average Operating
Current
Cycle time = 1us, 100% duty,
I
I/O =
0mA, /CS < 0.2V,
V
IN
<0.2V
-
-
4
mA
I
SB
TTL Standby Current
(TTL Input)
/CS = V
IH
or
/UB=/LB= V
IH
,
V
IN
= V
IH
or V
IL
-
-
0.5
mA
SL
-
-
8
uA
I
SB1
Standby Current
(CMOS Input)
/CS > Vcc - 0.2V or
/UB=/LB > Vcc-0.2V,
V
IN
> Vcc-0.2V or
V
IN
< Vss+0.2V
LL
-
1
25
uA
V
OL
Output Low Voltage
I
OL
= 2.1mA
-
-
0.4
V
V
OH
Output High Voltage
I
OH =
-1.0mA
2.4
-
-
V
Note : Typical values are at Vcc = 3.0V, T
A
= 25
C
CAPACITANCE
(Temp = 25
C, f = 1.0MHz)
Symbol
Parameter
Condition
Max.
Unit
C
IN
Input Capacitance(Add, /CS, /LB, /UB /WE, /OE) V
IN
= 0V
8
pF
C
OUT
Output Capacitance(I/O)
V
I/O
= 0V
10
pF
Note : These parameters are sampled and not 100% tested
HY62UF16804A
Rev.10/Jan. 2002
4
AC CHARACTERISTICS
Vcc = 2.7V~3.3V, T
A
= 0
C to 70
C/ -40
C to 85
C unless otherwise specified
-55
-70
-85
# Symbol Parameter
Min. Max. Min. Max. Min
Max.
READ CYCLE
1 tRC
Read Cycle Time
55
-
70
-
85
-
ns
2 tAA
Address Access Time
-
55
-
70
-
85
ns
3 tACS
Chip Select Access Time
-
55
-
70
-
85
ns
4 tOE
Output Enable to Output Valid
-
25
-
35
-
45
ns
5 tBA
/LB, /UB Access Time
-
55
-
70
-
85
ns
6 tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
-
ns
7 tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
ns
8 tBLZ
/LB, /UB Enable to Output in Low Z
10
-
10
-
10
-
ns
9 tCHZ
Chip Deselection to Output in High Z
0
20
0
25
0
30
ns
10 tOHZ
Out Disable to Output in High Z
0
20
0
25
0
30
ns
11 tBHZ
/LB, /UB Disable to Output in High Z
0
20
0
25
0
30
ns
12 tOH
Output Hold from Address Change
10
-
10
-
10
-
ns
WRITE CYCLE
13 tWC
Write Cycle Time
55
-
70
-
85
-
ns
14 tCW
Chip Selection to End of Write
45
-
60
-
70
-
ns
15 tAW
Address Valid to End of Write
45
-
60
-
70
-
ns
16 tBW
/LB, /UB Valid to End of Write
45
-
60
-
70
-
ns
17 tAS
Address Set-up Time
0
-
0
-
0
-
ns
18 tWP
Write Pulse Width
40
-
50
-
55
-
ns
19 tWR
Write Recovery Time
0
-
0
-
0
-
ns
20 tWHZ
Write to Output in High Z
0
20
0
25
0
30
ns
21 tDW
Data to Write Time Overlap
25
-
30
-
35
-
ns
22 tDH
Data Hold from Write Time
0
-
0
-
0
-
ns
23 tOW
Output Active from End of Write
5
-
5
-
5
-
ns
AC TEST CONDITIONS
T
A
= 0
C to 70
C / -40
C to 85
C, unless otherwise specified
PARAMETER
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
CL = 5pF + 1TTL Load
Output Load
Other
CL = 30pF + 1TTL Load
AC TEST LOADS
D
O U T
1 7 2 8 O h m
CL(1)
1 0 2 9 O h m
V
T M
= 2.8V
Note
1. Including jig and scope capacitance
Unit
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