This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev 13 / Apr. 2001 Hynix Semiconductor
HY62V8100B Series
128Kx8bit CMOS SRAM
Document Title
128K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No History Draft Date Remark
10 Initial Revision History Insert Jul.14.2000 Final
11 Change the Notch Location of sTSOP Sep.04.2000 Final
- Left-Top => Left-Center
12 Marking Information Add Dec.04.2000 Final
Revised
- AC Test Condition Add : 5pF Test Load
13 Changed Logo Apr.30.2001 Final
- HYUNDAI -> hynix
- Marking Information Change
HY62V8100B Series
Rev 13 / Apr. 2001
2
DESCRIPTION
The HY62V8100B is a high speed, low power and
1M bit CMOS SRAM organized as 131,072 words
by 8bit. The HY62V8100B uses high performance
CMOS process technology and designed for high
speed low power circuit technology. It is
particulary well suited for used in high density low
power system application. This device has a data
retention mode that guarantees data to remain
valid at a minimum power supply voltage of 2.0V.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup(LL-part)
-. 2.0V(min) data retention
Standard pin configuration
-. 32 SOP - 525mil
-. 32 TSOP-I - 8X20(Standard and Reversed)
-. 32 sTSOP-I - 8X13.4
(Standard and Reversed)
Product
Voltage
Speed
Operation
Standby Current(uA) Temperature
No.
(V)
(ns)
Current/Icc(mA)
LL
(
C)
HY62V8100B
3.0~3.6 70/85/100
5
10
0~70
HY62V8100B-E 3.0~3.6 70/85/100
5
15
-25~85(E)
HY62V8100B-I 3.0~3.6 70/85/100
5
15
-40~85(I)
Note 1. Blank : Commercial, E : Extended, I : Industrial
2. Current value is max.
PIN CONNECTION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
/WE
A13
A8
A9
A11
/OE
A10
/CS1
I/O8
I/O7
I/O6
I/O5
I/O4
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
CS2
SOP TSOP-I sTSOP-I
(Standard) (Standard)
PIN DESCRIPTION BLOCK DIAGRAM
Pin Name
Pin Function
/CS1
Chip Select 1
CS2
Chip Select 2
/WE
Write Enable
/OE
Output Enable
A0 ~ A16
Address Inputs
I/O1 ~ I/O8
Data Inputs / Outputs
Vcc
Power(3.0V~3.6V)
Vss
Ground
MEMORY ARRAY
128K x 8
ROW
DECODER
SENSE AMP
WRITE DRIVER
DATA I/O
BUFF
ER
I/O1
I/O8
COLUMN
DECODER
ADD INPUT
BUFFER
A0
A16
COLUMN
DECODER
/CS1
CS2
/OE
/WE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
/OE
A10
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ2
DQ1
A0
A1
A2
A3
A11
A9
A8
A13
/WE
CS2
A15
Vcc
NC
A16
A14
A12
A7
A6
A5
A4
/CS1
A11
A9
A8
A13
/WE
CS2
A15
Vcc
NC
A16
A14
A12
A7
A6
A5
A4
/
OE
A10
/CS1
DQ8
DQ7
DQ6
DQ5
DQ4
Vss
DQ3
DQ2
DQ1
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
HY62V8100B Series
Rev 13 / Apr. 2001
2
ORDERING INFORMATION
Part No.
Speed
Power Temp.
Package
HY62V8100BLLG
70/85/100
LL-part
SOP
HY62V8100BLLT1
70/85/100
LL-part
TSOP-I(Standard)
HY62V8100BLLR1
70/85/100
LL-part
TSOP-I(Reversed)
HY62V8100BLLST
70/85/100
LL-part
smaller TSOP-I(Standard)
HY62V8100BLLSR
70/85/100
LL-part
smaller TSOP-I(Reversed)
HY62V8100BLLG-E
70/85/100
LL-part E
SOP
HY62V8100BLLT1-E
70/85/100
LL-part
E
TSOP-I(Standard)
HY62V8100BLLR1-E 70/85/100
LL-part
E
TSOP-I(Reversed)
HY62V8100BLLST-E 70/85/100
LL-part
E
smaller TSOP-I(Standard)
HY62V8100BLLSR-E 70/85/100
LL-part
E
smaller TSOP-I(Reversed)
HY62V8100BLLG-I
70/85/100
LL-part I
SOP
HY62V8100BLLT1-I
70/85/100
LL-part I
TSOP-I(Standard)
HY62V8100BLLR1-I
70/85/100
LL-part I
TSOP-I(Reversed)
HY62V8100BLLST-I
70/85/100
LL-part I
smaller TSOP-I(Standard)
HY62V8100BLLSR-I
70/85/100
LL-part I
smaller TSOP-I(Reversed)
Note 1. Blank : Commercial, E : Extended, I : Industrial
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Remark
Vcc, V
IN,
V
OUT
Power Supply, Input/Output Voltage
-0.3 to 4.6
V
T
A
Operating Temperature
0 to 70
C
HY62V8100B
-25 to 85
C
HY62V8100B-E
-40 to 85
C
HY62V8100B-I
T
STG
Storage Temperature
-65 to 125
C
P
D
Power Dissipation
1.0
W
I
OUT
Data Output Current
50
mA
T
SOLDER
Lead Soldering Temperature & Time
260
10
C
sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 CS2 /WE /OE
Mode
I/O
Power
H
X
X
X Deselected
High-Z
Standby
X
L
X
X Deselected
High-Z
Standby
L
H
H
H
Output Disabled
High-Z
Active
L
H
H
L Read
Data Out
Active
L
H
L
X Write
Data In
Active
Note :
1. H=V
IH
, L=V
IL
, X=don't care( V
IH or
V
IL )
HY62V8100B Series
Rev 13 / Apr. 2001
3
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Typ.
Max.
Unit
Vcc
Supply Voltage
3.0
3.3
3.6
V
Vss
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
-
Vcc+0.3
V
V
IL
Input Low Voltage
-0.3
(1)
-
0.6
V
Note :
1. V
IL
= -1.5V for pulse width less than 30ns and not 100% tested
DC ELECTRICAL CHARACTERISTICS
Vcc = 3.0V~3.6V, T
A
= 0
C to 70
C / -25
C to 85
C (E) / -40
to 85
(I), unless otherwise specified
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
uA
I
LO
Output Leakage Current
Vss <V
OUT
< Vcc,
/CS1 = V
IH
or CS2 = V
IL
or
/
OE
=
V
IH
or /WE = V
IL
-1
-
1
uA
Icc
Operating Power Supply
Current
/CS1 = V
IL
, CS2 = V
IH,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
-
5
mA
I
CC1
Average Operating Current
/CS1 = V
IL
, CS2 = VIH,
V
IN
= V
IH
or V
IL
Cycle Time = Min, 100% duty,
IIO = 0mA
-
35
mA
I
SB
TTL Standby Current
(TTL Input)
/CS1 = V
IH
or CS2 = V
IL ,
V
IN
= V
IH
or V
IL
-
-
0.5
mA
I
SB1
Standby
HY62V8100B
/CS1 > Vcc - 0.2V or CS2 < 0.2V,
-
0.5
10
uA
Current
HY62V8100B-E V
IN
> Vcc - 0.2V or
-
0.5
15
uA
(CMOS Input) HY62V8100B-I
V
IN
< Vss + 0.2V
-
0.5
15
uA
V
OL
Output Low Voltage
I
OL
= 2.1mA
-
-
0.4
V
V
OH
Output High Voltage
I
OH =
-1mA
2.2
-
-
V
Note : Typical values are at Vcc = 3.3V, T
A
= 25
C
CAPACITANCE
(Temp = 25
C, f= 1.0MHz)
Symbol
Parameter
Condition
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
I/O
= 0V
8
pF
Note : These parameters are sampled and not 100% tested
HY62V8100B Series
Rev 13 / Apr. 2001
4
AC CHARACTERISTICS
Vcc = 3.0V~3.6V, T
A
= 0
C to 70
C / -25
C to 85
C (E) / -25
to 85
(I), unless otherwise specified
-70
-85
-10
Min. Max. Min. Max. Min
Max.
1 tRC
Read Cycle Time
70
-
85
-
100
-
ns
2 tAA
Address Access Time
-
70
-
85
-
100
ns
3 tACS
Chip Select Access Time
-
70
-
85
-
100
ns
4 tOE
Output Enable to Output Valid
-
40
-
45
-
50
ns
5 tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
-
ns
6 tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
ns
7 tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
30
ns
8 tOHZ
Out Disable to Output in High Z
0
30
0
30
0
30
ns
9 tOH
Output Hold from Address Change
10
-
10
-
15
-
ns
10 tWC
Write Cycle Time
70
-
85
-
100
-
ns
11 tCW
Chip Selection to End of Write
60
-
70
-
80
-
ns
12 tAW
Address Valid to End of Write
60
-
70
-
80
-
ns
13 tAS
Address Set-up Time
0
-
0
-
0
-
ns
14 tWP
Write Pulse Width
50
-
55
-
75
-
ns
15 tWR
Write Recovery Time
0
-
0
-
0
-
ns
16 tWHZ Write to Output in High Z
0
25
0
30
0
35
ns
17 tDW
Data to Write Time Overlap
30
-
40
-
45
-
ns
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
ns
19 tOW
Output Active from End of Write
5
-
5
-
10
-
ns
AC TEST CONDITIONS
T
A
= 0
C to 70
C / -25
C to 85
C (E) / -25
to 85
(I), unless otherwise specified
Parameter
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.5V
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ
CL = 5pF + 1TTL Load
Others
CL = 100pF + 1TTL Load
AC TEST LOADS
CL(1)
TTL
Note : 1 Including jig and scope capacitance
READ CYCLE
WRITE CYCLE
Symbol
Parameter
#
Unit
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