This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 02 / Apr. 2001 Hynix Semiconductor
HY62K(U,V)T08081E
Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM
Revision History
Revision No History Draft Date Remark
00 Initial Jan.20.2000 Final
Merged 3.0V/3.3V SPEC
01 Revised Feb.21.2001 Final
-
Marking Information Change : SOP Type
-
Voh Limit Change : 2.4V => 2.2V @2.7~3.6V
02 Changed Logo Apr.30.2001 Final
- HYUNDAI -> hynix
- Marking Information Change
HY62K(U,V)T08081E Series
Rev 02 / Apr. 2001
2
DESCRIPTION
The HY62K(U,V)T08081E is a high-speed, low
power and 32,786 X 8-bits CMOS Static Random
Access Memory fabricated using Hynix's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low power consumption
Battery backup(L/LL-part)
- 2.0V(min.) data retention
Standard pin configuration
- 28 pin 600mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard)
Product
Voltage
Speed
Operation
Standby Current(uA)
Temperature
No.
(V)
(ns)
Current(mA)
LL-Part
(
C)
HY62KT08081E-C
5
0~70(Normal)
HY62KT08081E-E
8
-25~85(Extended)
HY62KT08081E-I
2.7~3.6 70*/85/100
2
8
-40~85(Extended)
HY62VT08081E-C
5
0~70(Normal)
HY62VT08081E-E
8
-25~85(Extended)
HY62VT08081E-I
3.0~3.6 70/85/100
2
8
-40~85(Extended)
HY62UT08081E-C
5
0~70(Normal)
HY62UT08081E-E
8
-25~85(Extended)
HY62UT08081E-I
2.7~3.3 70*/85/100
2
8
-40~85(Extended)
Note *. Measured at 30pF test load.
PIN CONNECTION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
/CS
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
/OE
A11
A9
A8
A13
/WE
Vcc
A14
A12
A7
A6
A5
A4
A3
I/O8
PDIP SOP TSOP-I(Standard)
PIN DESCRIPTION BLOCK DIAGRAM
Pin Name
Pin Function
/CS
Chip Select
/WE
Write Enable
/OE
Output Enable
A0 ~ A14
Address Inputs
I/O1 ~ I/O8
Data Input/Output
Vcc
Power(
+
5.0V)
Vss
Ground
A14
COLUMN DECODER
A0
ROW DECODER
MEMORY ARRAY
512x512
SENSE AMP
OUTPUT BUFFER
I/O1
I/O8
ADD INPUT BUFFER
/CS
/OE
/WE
WRITE DRIVER
CONTROL
LOGIC
HY62K(U,V)T08081E Series
Rev 02 / Apr. 2001
2
ORDERING INFORMATION
Part No.
Vcc
Speed
Power
Temp
Package
HY62KT08081E-DPC
0 to 70
C
HY62KT08081E-DPE
-25 to 85
C
HY62KT08081E-DPI
-40 to 85
C
PDIP
HY62KT08081E-DGC
0 to 70
C
HY62KT08081E-DGE
-25 to 85
C
HY62KT08081E-DGI
-40 to 85
C
SOP
HY62KT08081E-DTC
0 to 70
C
HY62KT08081E-DTE
-25 to 85
C
HY62KT08081E-DTI
2.7~3.6V 70*/85/100ns LL-part
-40 to 85
C
TSOP-I Standard
HY62VT08081E-DPC
0 to 70
C
HY62VT08081E-DPE
-25 to 85
C
HY62VT08081E-DPI
-40 to 85
C
PDIP
HY62VT08081E-DGC
0 to 70
C
HY62VT08081E-DGE
-25 to 85
C
HY62VT08081E-DGI
-40 to 85
C
SOP
HY62VT08081E-DTC
0 to 70
C
HY62VT08081E-DTE
-25 to 85
C
HY62VT08081E-DTI
3.0~3.6V
70/85/100ns LL-part
-40 to 85
C
TSOP-I Standard
HY62UT08081E-DPC
0 to 70
C
HY62UT08081E-DPE
-25 to 85
C
HY62UT08081E-DPI
-40 to 85
C
PDIP
HY62UT08081E-DGC
0 to 70
C
HY62UT08081E-DGE
-25 to 85
C
HY62UT08081E-DGI
-40 to 85
C
SOP
HY62UT08081E-DTC
0 to 70
C
HY62UT08081E-DTE
-25 to 85
C
HY62UT08081E-DTI
2.7~3.3V 70*/85/100ns LL-part
-40 to 85
C
TSOP-I Standard
Note *. Measured at 30pF test load.
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Vcc, V
IN,
V
OUT
Power Supply, Input/Output Voltage
-0.3 to 4.6
V
HY62K(U,V)T08081E-C
0 to 70
C
HY62K(U,V)T08081E-E
-25 to 85
C
T
A
Operating Temperature
HY62K(U,V)T08081E-I
-40 to 85
C
T
STG
Storage Temperature
-65 to 150
C
P
D
Power Dissipation
1.0
W
I
OUT
Data Output Current
50
mA
T
SOLDER
Lead Soldering Temperature & Time
260
10
C
sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
HY62K(U,V)T08081E Series
Rev 02 / Apr. 2001
3
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
HY62KT08081E
2.7
3.0/3.3
3.6
V
HY62VT08081E
3.0
3.3
3.6
V
Vcc
Power Supply
Voltage
HY62UT08081E
2.7
3.0
3.3
V
Vss
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
-
Vcc+0.3
V
V
IL
Input Low Voltage
-0.3
(1)
-
0.4
V
Note
1. V
IL
= -1.5V for pulse width less than 50ns
TRUTH TABLE
/CS /WE /OE
Mode
I/O Operation
H
X
X Standby
High-Z
L
H
H Output Disabled High-Z
L
H
L Read
Data Out
L
L
X Write
Data In
Note
1. H=V
IH
, L=V
IL
, X=Don't Care
DC CHARACTERISTICS
Vcc = 2.7~3.6V, T
A
= 0
C
to 70
C (Normal)/-25
C to 85
C (Extended) /-40
C to 85
C (Industrial),
unless otherwise specified.
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
-1
-
1
uA
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL
-1
-
1
uA
Icc
Operating Power Supply
Current
/CS = V
IL
,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
-
-
2
mA
I
CC1
Average Operating Current /CS = V
IL,
V
IN
= V
IH
or V
IL,
Min. Duty Cycle = 100%, I
I/O =
0mA
-
-
30
mA
I
CC2
Average Operating Current /CS = V
IL,
V
IN
= V
IH
or V
IL
Cycle = 1us , I
I/O =
0mA
-
-
5
mA
I
SB
TTL Standby Current
(TTL Inputs)
/CS= V
IH,
V
IN
= V
IH
or V
IL
-
-
0.3
mA
I
SB1
CMOS Standby Current
/CS > Vcc - 0.2V,
0~70
C
-
-
5
uA
(CMOS Inputs)
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
-25~85
C or
-40~85
C
-
-
8
uA
V
OL
Output Low Voltage
I
OL
= 2.1mA
-
-
0.4
V
V
OH
Output High Voltage
I
OH =
-1.0mA
2.2
-
-
V
Note : Typical values are at Vcc =3.0/3.3V, T
A
= 25
C
HY62K(U,V)T08081E Series
Rev 02 / Apr. 2001
4
AC CHARACTERISTICS
Vcc = 2.7~3.6V , T
A
= 0
C
to 70
C
(Normal)/-25
C to 85
C (Extended) /-40
C to 85
C (Industrial),
unless otherwise specified.
-70
-85
-10
Min. Max. Min. Max. Min
Max.
1 tRC
Read Cycle Time
70
-
85
-
100
-
ns
2 tAA
Address Access Time
-
70
-
85
-
100
ns
3 tACS
Chip Select Access Time
-
70
-
85
-
100
ns
4 tOE
Output Enable to Output Valid
-
35
-
40
-
50
ns
5 tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
-
ns
6 tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
-
ns
7 tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
30
ns
8 tOHZ
Out Disable to Output in High Z
0
30
0
30
0
30
ns
9 tOH
Output Hold from Address Change
10
-
10
-
15
-
ns
10 tWC
Write Cycle Time
70
-
85
-
100
-
ns
11 tCW
Chip Selection to End of Write
60
-
70
-
80
-
ns
12 tAW
Address Valid to End of Write
60
-
70
-
80
-
ns
13 tAS
Address Set-up Time
0
-
0
-
0
-
ns
14 tWP
Write Pulse Width
50
-
60
-
70
-
ns
15 tWR
Write Recovery Time
0
-
0
-
0
-
ns
16 tWHZ Write to Output in High Z
0
25
0
30
0
35
ns
17 tDW
Data to Write Time Overlap
30
-
40
-
40
-
ns
18 tDH
Data Hold from Write Time
0
-
0
-
0
-
ns
19 tOW
Output Active from End of Write
5
-
5
-
10
-
ns
READ CYCLE
WRITE CYCLE
Symbol
Parameter
#
Unit
PDF 
ZIP