ChipFind - документация

Электронный компонент: IC43R32400-4B

Скачать:  PDF   ZIP
IC43R32400
Integrated Circuit Solution Inc.
1
DDR003-0B 11/10/2004
Document Title
1M x 32 Bit x 4 Banks (128-MBIT) DDR SDRAM
Revision History
Revision No
History
Draft Date
Remark
0A
Initial Draft
July 21,2004
0B
Mass production
November 10,2004
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
IC43R32400
2
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
FEATURES
Overview
*
Fast clock rate: 250/200 MHz
Differential Clock CK & CK# input
4 Bi-directional DQS. Data transactions on both
edges of DQS (1DQS / Byte)
DLL aligns DQ and DQS transitions
Edge aligned data & DQS output
Center aligned data & DQS input
4 internal banks, 1M x 32-bit for each bank
Programmable mode and extended mode registers
- CAS# Latency: 3, 4, 5
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleave
Full page burst length for sequential type only
Start address of full page burst should be even
All inputs except DQ's & DM are at the positive
edge of the system clock
No Write-Interrupted by Read function
4 individual DM control for write masking only
Auto Refresh and Self Refresh
4096 refresh cycles / 32ms
Power supplies up to 250/200MHz:
VDD = 2.5V +/- 5%
VDDQ = 2.5V +/- 5%
Interface : SSTL_2 I/O compatible
Standard 144-ball FBGA package
Support Green Package
The IC43R32400 DDR SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 128
Mbits. It is internally configured as a quad 1M x 32 DRAM
with a synchronous interface (all signals are registered
on the positive edge of the clock signal, CK).
Data outputs occur at both rising edges of CK and CK#.
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence.
Accesses begin with the registration of a BankActivate
command, which is then followed by a Read or Write
command.
The IC43R32400 provides programmable Read or Write
burst lengths of 2, 4, 8. An auto precharge function may
be enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence.
The refresh functions, either Auto or Self Refresh are
easy to use.
In addition, IC43R32400 features programmable DLL
option. By having a programmable mode register and
extended mode register, the system can choose the
most suitable modes to maximize its performance.
These devices are well suited for applications requiring
high memory bandwidth, result in a device particularly
well suited to high performance main memory and
graphics applications.
1M Words x 32 Bits x 4 Banks (128-MBIT)
DDR SYNCHRONOUS DYNAMIC RAM
IC43R32400
Integrated Circuit Solution Inc.
3
DDR003-0B 11/10/2004
Pin Assignment (FBGA 144Ball Top View )
Note: VSS pins for thermal balls are optional
1 2 3 4 5 6 7 8 9 10 11 12
A
B
C
D
E
F
G
H
J
K
L
M
IC43R32400
4
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
IC43R32400
Integrated Circuit Solution Inc.
5
DDR003-0B 11/10/2004
PIN DESCRIPTIONS
Table 1.Pin Details of IC43R32400
Symbol Type
Description
CK,CK# Input
Differential Clock: CK, CK# are driven by the system clock. All SDRAM input commands are
sampled on the positive edge of CK. Both CK and CK# increment the internal burst counter and
controls the output registers.
CKE
Input
Clock Enable: CKE activates(HIGH)and deactivates(LOW)the CK signal.If CKE goes low synchro-
nously with clock,the internal clock is suspended from the next clock cycle and the state of output
and burst address is frozen as long as the CKE remains low.When all banks are in the idle state,
deactivating the clock controls the entry to the Power Down and Self Refresh modes.
BS0,BS1 Input
Bank Select: BA0 and BA1 defines to which bank the BankActivate,Read,Write,or BankPrecharge
command is being applied. They also define which Mode Register or Extended Mode Register is
loaded during a Mode Register Set command.
A0-A11 Input
Address Inputs: A0-A10 are sampled during the BankActivate command (row address A0-A11)
and Read/Write command (column address A0-A7 with A8 defining Auto Precharge) to select one
location out of the 256K available in the respective bank.During a Precharge command,A8 is
sampled to determine if all banks are to be precharged (A8 =HIGH).The address inputs also
provide the op-code during a Mode Register Set or Extended Mode Register Set command.
CS#
Input
Chip Select: CS# enables (sampled LOW)and disables (sampled HIGH)the command decoder.All
commands are masked when CS#is sampled HIGH.CS#provides for external bank selection on
systems with multiple banks.It is considered part of the command code.
RAS#
Input
Row Address Strobe: The RAS# signal defines the operation commands in conjunction with the
CAS# and WE# signals and is latched at the positive edges of CK.When RAS# and CS# are
asserted "LOW"and CAS# is asserted "HIGH,"either the BankActivate command or the Precharge
command is selected by the WE# signal.When the WE# is asserted "HIGH,"the BankActivate
command is selected and the bank designated by BS is turned on to the active state.When the
WE# is asserted "LOW,"the Precharge command is selected and the bank designated by BS is
switched to the idle state after the precharge operation.
CAS#
Input
Column Address Strobe:The CAS# signal defines the operation commands in conjunction with
the RAS# and WE# signals and is latched at the positive edges of CK. When RAS# is held
"HIGH"and CS# is asserted "LOW,"the column access is started by asserting CAS# "LOW."Then,
the Read or Write command is selected by asserting WE# "HIGH"or "LOW."
WE#
Input
Write Enable:The WE# signal defines the operation commands in conjunction with the RAS# and
CAS# signals and is latched at the positive edges of CK.The WE# input is used to select the
BankActivate or Precharge command and Read or Write command.
DQS0-DQS3 Input/Output Bidirectional Data Strobe: The DQSx signals are mapped to the following data bytes:
DQS0 to DQ0-DQ7, DQS1 to DQ8-DQ15, DQS2 to DQ16-DQ23, DQS3 to DQ24-DQ31.
DM0-DM3 Input Data Input Mask: DM0-DM3 are byte specific. Input data is masked when DM is sampled HIGH
during a write cycle. DM3 masks DQ31-DQ24, DM2 masks DQ23DQ16, DM1 masks DQ15-DQ8,
and DM0 masks DQ7-DQ0.
DQ0-DQ31 Input/Output Data I/O:The DQ0-DQ31 input and output data are synchronized with the positive edges of
CK and CK#.The I/Os are byte-maskable during Writes.
V
DD
Supply Power Supply: Power for the input buffers and core logic.
IC43R32400
6
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
V
SS
Supply
Ground: Ground for the input buffers and core logic
.
V
DDQ
Supply
DQ Power: Provide isolated power to DQs for improved noise immunity.
V
SSQ
Supply
DQ Ground: Provide isolated ground to DQs for improved noise immunity.
V
REF
Supply
Reference Voltage for Inputs: +0.5 x V
DDQ
NC
-
No Connect: These pins should be left unconnected.
Note: The timing reference point for the differential clocking is the cross point of the CK and CK#. For any applications
using the single ended clocking, apply V
REF
to CK# pin.
Command
State CKEn-1 CKEn DM BA1
BA0 A8 A11-A9,A7-0 CS# RAS# CAS# WE#
BankActivate
Idle
(3)
H
X
X
V
V Row address
L
L
H
H
BankPrecharge
Any
H
X
X
V
V L
X
L
L
H
L
PrechargeAll
Any
H
X
X
X
X H
X
L
L
H
L
Write
Active
(3)
H
X
V
V
V L
L
H
L
L
Write and Auto Precharge Active
(3)
H
X
V
V
V H
L
H
L
L
A0~A7
Read
Active
(3)
H
X
X
V
V L
L
H
L
H
Read and Autoprecharge Active
(3)
H
X
X
V
V H
L
H
L
H
A0~A7
Mode Register Set
Idle
H
X
X
L L
OP code
L
L
L L
Extended Mode Register Set
Idle H X
X
L H OP code L
L
L L
No-Operation
Any
H
X
X
X
X
X X L
H
H
H
Device Deselect
Any
H
X
X
X
X
X X H
X
X
X
Burst Stop Any
(4)
H
X
X
X
X
X X L
H
H
L
AutoRefresh
Idle
H
H
X
X
X X X L L L H
SelfRefresh Entry
Idle
H
L
X
X
X
X X L
L
L
H
SelfRefresh Exit
Idle
L
H
X
X
X
X X H
X
X
X
(SelfRefresh)
L
H
H
H
Power Down Mode Entry Idle/Active
(5)
H
L
X
X
X
X X H X X X
L
H
H
H
Power Down Mode Exit
Any
L
H
X
X
X
X X H X
X
X
(PowerDown)
L
H
H H
Data Write/Output Enable Active
H
X
L
X
X
X X X
X
X
X
Data Mask/Output Disable Active
H
X
H
X
X
X X X
X
X
X
Column
address
Column
address
Note:
1. V =Valid Data, X =Don 't care,L =Low level, H = High level
2. CKEn signal is input level when commands are provided.
CKEn-1 signal is input level one clock cycle before the commands are provided.
3. These are states of bank designated by BA1 signals.
4. Read burst stop with BST command for all burst types.
5. Power Down Mode can not enter in the burst operation.
When this command is asserted in the burst cycle,device state is clock suspend mode.
Operation Mode
Fully synchronous operations are performed to latch the commands at the positive edges of CK. Table 2 shows the
truth table for the operation commands.
Table 2. Truth Table (Note (1), (2) )
IC43R32400
Integrated Circuit Solution Inc.
7
DDR003-0B 11/10/2004
Mode Register Set (MRS)
The mode register is divided into various fields depending on functionality.
Burst Length Field (A2, A1, A0)
This field specifies the data length of column access and selects the Burst Length.
Addressing Mode Select Field (A3)
The Addressing Mode can be Interleave Mode or Sequential Mode. Both Sequential Mode and
Interleave Mode support burst length of 2, 4 and 8. Full page burst length is only for Sequential mode.
CAS# Latency Field (A6, A5, A4)
This field specifies the number of clock cycles from the assertion of the Read command to the first read
data. The minimum whole value of CAS# Latency depends on the frequency of CK. The minimum whole
value satisfying the following formula must be programmed into this field.
tCAC(min) _ CAS# Latency X tCK
Test Mode field :A7; DLL Reset Mode field : A8
These two bits must be programmed to "00" in normal operation.
( BA0, BA1)
Mode Resistor Bitmap
X 1 0 2, 3, 0, 1
2, 3, 0, 1
X 1 1 3, 0, 1, 2
3, 2, 1, 0
0 0 0 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
0 0 1 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6
0 1 0 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5
0 1 1 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4
1 0 0 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
1 0 1 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2
1 1 0 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1
1 1 1 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0
Burst Length Start Address
Sequential
Interleave
A2
A1 A0
2
X
X
0
0, 1
0, 1
X
X
1
1, 0
1, 0
X
0
0
0, 1, 2, 3
0, 1, 2, 3
4
X
0
1
1, 2, 3, 0
1, 0, 3, 2
8
Brst Definition, Addressing Sequence of Sequential and Interleave Mode
IC43R32400
8
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
Extended Mode Register Set (EMRS)
The Extended Mode Register Set stores the data for enabling or disabling DLL and selecting output driver strength.
The default value of the extended mode register is not defined, therefore must be written after power up for proper
operation. The extended mode register is written by asserting low on CS#, RAS#, CAS#, and WE#. The state of A0,
A2 ~ A5, A7 ~ A11and BA1 is written in the mode register in the same cycle as CS#, RAS#, CAS#, and WE# going
low. The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode
register. A1 and A6 are used for setting driver strength to normal, weak or matched impedance. Two clock cycles are
required to complete the write operation in the extended mode register. The mode register contents can be changed
using the same command and clock cycle requirements during operation as long as all banks are in the idle state. A0
is used for DLL enable or disable. "High" on BA0 is used for EMRS. Refer to the table for specific codes.
Extended Mode Resistor Bitmap
Power up Sequence
Power up must be performed in the following sequence.
1)
Apply power to VDD before or at the same time as VDDQ, VTT and VREF when all input signals are held
"NOP" state and maintain CKE "LOW".
2)
Start clock and maintain stable condition for minimum 200us.
3)
Issue a "NOP" command and keep CKE "HIGH"
4)
Issue a "Precharge All" command.
5)
Issue EMRS enable DLL.
6)
Issue MRS reset DLL. (An additional 200 clock cycles are required to lock the DLL).
7)
Precharge all banks of the device.
8)
Issue two or more Auto Refresh commands.
9)
Issue MRS with A8 to low to initialize the mode register.
IC43R32400
Integrated Circuit Solution Inc.
9
DDR003-0B 11/10/2004
Absolute Maximum Rating
Symbol
Item
Rating
Unit
Note
V
IN,
V
OUT
Input,Output Voltage
-0.3~V
DDQ
+0.3
V
V
DD
,V
DDQ
Power Supply Voltage
-0.3~3.6
V
T
A
Ambient Temperature
0~70
C
T
STG
Storage Temperature
-55~150
C
T
SOLDER
Soldering Temperature (10s)
260
C
P
D
Power Dissipation
2.0
W
I
OUT
Short Circuit Output Current
50
mA
Recommended D.C.Operating Conditions (SSTL_2 In/Out, Ta =0~70+/-
C)
Symbol Parameter
Min.
Typ. Max. Unit
Note
V
DD
Power Supply Voltage
2.375
2.5 2.625 V
V
DDQ
Power Supply Voltage(for I/O )
2.375 2.5 2.625 V
V
REF
Input Reference Voltage 0.49x V
DDQ
- 0.51x V
DDQ
V
V
TT
Termination Voltage V
REF
- 0.04 V
REF
V
REF
+ 0.04 V
V
IH(DC)
Input High Voltage
V
REF
+ 0.15 - VDDQ +0.3 V
V
IL(DC)
Input Low Voltage
Vssq - 0.3 - VDDQ -0.15 V
V
OH
Output High Voltage
Vtt + 0.76 - - V I
OH
= -15.2 mA
V
OL
Output Low Voltage - - V
REF
- 0.76 V I
OL
= +15.2 mA
I
IL
Input Leakage Current - 5 - 5 uA
I
OL
Output Leakage Current - 5 - 5 uA
Note: Under all conditions VDDQ must bbe less than or equal to VDD.
Capacitance (VDD =2.5V, f =1MHz,Ta =25+/-
C)
Symbol
Parameter
Min.
Max.
Unit
C
IN1
Input Capacitance (A0~A11, BA0, BA1)
4
5 pF
C
IN2
Input Capacitance(CK, CK#,CKE, CS#,RAS#, CAS #,WE#) 3
5 pF
C
OUT
DQ & DQS input/output capacitance 6 8 pF
C
IN3
DM0~DM3 input/output capacitance 6 8 pF
Note: These parameters are periodically sampled and are not 100% tested.
IC43R32400
10
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
D.C. Characteristics
(VDD = 2.5V +/ - 5%, TA = 0~70 C)
Parameter & Test Condition
Symbol 4 5 Unit
Max
OPERATING CURRENT :
One bank; Active-
Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and
DQS inputs changing once per clock cycle; Address
and control inputs changing once every two clock
cycles.
IDD0 180 160 mA
OPERATING CURRENT :
One bank; Active-Read-
Precharge; BL=4; CL=4; tRCDRD=4*t
CK
; t
RC
=t
RC
(min);
t
CK
=t
CK
(min); lout=0mA; Address and control inputs
changing once per clock cycle
IDD1 260 240 mA
PRECHARGE POWER-DOWN STANDBY
CURRENT:
All banks idle; power-down mode; t
CK
=t
CK
(min); CKE=LOW
IDD2P 45 40 mA
IDD2N 80 80 mA
IDD3P 45 40 mA
IDD3N 100 100 mA
IDD4R 440 420 mA
IDLE STANDLY CURRENT :
CKE = HIGH;
CS#=HIGH(DESELECT); All banks idle; t
CK
=t
CK
(min);
Address and control inputs changing once per clock
cycle; V
IN
=V
REF
for DQ, DQS and DM
ACTIVE POWER-DOWN STANDBY CURRENT :
one bank active; power-down mode; CKE=LOW;
t
CK
=t
CK
(min)
ACTIVE STANDBY CURRENT :
CS#=HIGH;
CKE=HIGH; one bank active ; t
RC
=t
RC
(max);t
CK
=t
CK
(min);Address and control inputs changing once per
clock cycle; DQ,DQS,and DM inputs changing twice per
clock cycle
OPERATING CURRENT BURST READ :
BL=2;
READS; Continuous burst; one bank active; Address and
control inputs changing once per clock cycle; t
CK
=t
CK
(min); lout=0mA;50% of data changing on every transfer
OPERATING CURRENT BURST Write :
BL=2;
WRITES; Continuous Burst ;one bank active; address
and control inputs changing once per clock cycle;
t
CK
=t
CK
(min); DQ,DQS,and DM changing twice per clock
cycle; 50% of data changing on every transfer
IDD4W 300 270 mA
DD5 300 280 mA
IDD7 650 550 mA
AUTO REFRESH CURRENT :
t
RC
=t
RFC
(min);
t
CK
=t
CK
(min)
SELF REFRESH CURRENT:
Sell Refresh Mode ;
CKE<=0.2V;t
CK
=t
CK
(min)
BURST OPERATING CURRENT 4 bank
operation:
Four bank interleaving READs; BL=4;with
Auto Precharge; t
RC
=t
RC
(min); t
CK
=t
CK
(min); Address
and control inputschang only during Active, READ , or
WRITE command
IDD6 3 3 mA
Note:
1.Stress greater than those listed under " Absolute maximum Ratings" may cause permanent damage
of the device.
2.All voltages are referenced to Vss.
3.Power-up sequence is described in previous page.
IC43R32400
Integrated Circuit Solution Inc.
11
DDR003-0B 11/10/2004
Symbol Parameter Value
Unit
C
DC1
Decouping Capacitance between V
DD
and V
SS
0.1+0.01
uF
C
DC2
Decouping Capacitance between V
DDQ
and V
SSQ
0.1+0.01
uF
AC Input Operating Conditions
(VDD = 2.5V +/- 5%, Ta = 0~70
C)
Symbol Parameter
Min
Max
Unit
V
IH
Input High Voltage; DQ
V
REF
+0.4
-
V
Decoupling Capacitance Guide Line
V
IL
Input Low Voltage; DQ
-
V
REF
-0.4
V
V
ID
Clock Input Differential Voltage; Ck & CK#
0.8
V
DDQ
+0.6
V
V
IX
Clock Input Crossing Point Voltage; Ck & CK#
0.5xV
DDQ
-0.2
0.5xV
DDQ
+0.2 V
AC Operating Test Conditions
(VDD = 2.5V +/- 5%, Ta = 0~70
C)
Reference Level of Output Signals (V
RFE
)
0.5 x V
DDQ
CK & CK# signal maximum peak swing
1.5V
Output Load
See Figure. A Test Load
Input Signal Levels
V
REF
+0.4 V / V
REF
-0.4 V
Input Signals Slew Rate
1 V/ns
Input timing measurement reference level
V
REF
Output timing measurement reference level
V
TT
Reference Level of Input Signals
0.5 x V
DDQ
Fiaure A. Test Load
IC43R32400
12
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
Electrical Characteristics and Recommended A.C. Operating Conditions
Symbol Parameter
4.0 5.0 Unit
Min Man Min Max
CL = 3
4 10
5 10
ns
t
CK
Clock cycle time
CL = 4
4 10
5
10
CL = 5
4 5 5
10
t
CH
Clock high level width
0.45 0.55
0.45 0.55
t
CK
t
CL
Clock low level width
0.45
0.55
0.45 0.55
t
CK
t
DQSCK
DQS-out access time from CK,CK#
-0.7 0.7
-0.7 0.7
ns
t
AC
Output access time from CK,CK#
-0.7 0.7
-0.7 0.7
ns
t
DQSQ
DQS-DQ Skew
-
0.4
-
0.45
ns
t
RPRE
Read preamble
0.9
1.1
0.9 1.1
t
CK
t
RPST
Read postamble
0.4
0.6
0.4 0.6
t
CK
t
DQSS
CK to valid DQS-in
0.85
1.15
0.85 1.15
t
CK
t
WPRES
DQS-in setup time
0
-
0
-
ns
t
WPREH
DQS-in hold time
0.35
- 0.35 -
ns
t
WPST
DQS write postamble
0.4
0.6
0.4 0.6
t
CK
t
DQSH
DQS in high level pulse width
0.4
0.6
0.4 0.6
t
CK
t
DQSL
DQS in low level pulse width
0.4
0.6
0.4 0.6
t
CK
t
IS
Address and Control input setup time
0.9
-
1.0 -
ns
t
DS
DQ & DM setup time to DQS
0.45
-
0.5 -
ns
t
DH
DQ & DM hold time to DQS
0.45
-
0.5 -
ns
tCLMIN
tCLMIN
t
HP
Clock half period
or
-
or
-
ns
tCHMIN
tCHMIN
t
QH
Output DQS valid window
tHP- - tHP - -
0.45 0.5
ns
t
RC
Row cycle time
15
-
12 -
t
CK
t
RFC
Refresh row cycle time
17
-
14 -
t
CK
t
RAS
Row active time
10
100K
8
100K
t
CK
t
RCDRD
RAS# to CAS# Delay in Read
5
-
4
-
t
CK
t
RCDWR
RAS# to CAS# Delay in Write
3
-
2
-
t
CK
t
RP
Row precharge time
3
-
3
-
t
CK
t
RRD
Row active to Row active delay
3
-
2
-
t
CK
tw
R
Write recovery time
3
-
2
-
t
CK
t
CDLR
Last data in to Read command 2 -
2
-
t
CK
t
CCD
Col. Address to Col. Address delay
1
-
1
-
t
CK
t
MRD
Mode register set cycle time
2
-
2
-
t
CK
t
DAL
Auto precharge write recovery + Precharge
8
-
7
-
t
CK
t
XSA
Self refresh exit to read command delay
200
-
200
-
t
CK
t
PDEX
Power down exit time
tIS + 2tCK
-
tIS + 2tCK
-
ns
t
REF
Refresh interval time -
7.8
7.8
us
(VDD = 2.5V +/- 5%, Ta = 0~70
C)
IC43R32400
Integrated Circuit Solution Inc.
13
DDR003-0B 11/10/2004
Timing Waveforms
Figure 1. AC Parameters for Read Timing ( Burst Length =4)
Figure 2. AC Parameters for Write Timing (Burst Length=4 )
CMD
CK#
CK
A0-11,
DQS
DM
DQ
IC43R32400
14
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
IC43R32400
Integrated Circuit Solution Inc. 15
DDR003-0B 11/10/2004
Figure 6. Write with Auto Precharge (Burst Length = 4)
Figure 7. Read Burst Interrupt by Read (CAS Letancy =5, Burst Length = 4 )
Figure 8. Write Interrupted by Write (Burst Length =4)
Figure 9. Auto Refresh Timing
IC43R32400
16
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
Figure 11. Precharge Command
t
MRD
IC43R32400
Integrated Circuit Solution Inc.
17
DDR003-0B 11/10/2004
IC43R32400
18
Integrated Circuit Solution Inc.
DDR003-0B 11/10/2004
Integrated Circuit Solution Inc.
HEADQUARTER:
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,
HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
Fax: 886-3-5783000
BRANCH OFFICE:
7F, NO. 106, SEC. 1, HSIN-TAI 5
TH
ROAD,
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.
TEL: 886-2-26962140
FAX: 886-2-26962252
http://www.icsi.com.tw
ORDERING INFORMATION (Pb-free Package)
Commercial Range: 0




C to 70




C
Data rate
Speed (ns)
Order Part No.
Package
500MHz
4
IC43R32400-4B 144Ball FBGA
500MHz 4 IC43R32400-4BG 144Ball FBGA (pb-free )
400MHz
5
IC43R32400-5B 144Ball FBGA
400MHz 5 IC43R32400-5BG 144Ball FBGA (pb-free )