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Электронный компонент: ICS9112M-43

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Integrated
Circuit
Systems, Inc.
General Description
Features
ICS9112-43/44
Block Diagram
Frequency Generator for Gigabit Ethernet Systems
Applications
9112-43 9112-44 Rev D 3/3/99
The ICS9112-43/44 is a high speed clock generator designed
to support Gigabit Ethernet system requirements. The
ICS9112-43/44 generates 125 MHz from a 20 MHz crystal.
An exact frequency multiplying ratio ensures better than
100 ppm frequency accuracy using a standard AT crystal
with external load capacitors (typically 33pF5% for an
18pF load crystal). Achieving 100 ppm over four years
requires the crystal to have a 20 ppm initial accuracy, 30
ppm temperature and 5 ppm/year aging coefficients.
The ICS9112-43/44 with less than 50ps accumulative jitter
is well suited for Gigabit Ethernet applications.
Generates 125 MHz clocks from a 20 MHz crystal
Less than 45ps one sigma jitter (15ps typ.)
Less than 130ps absolute jitter
Less than 50ps accumulative jitter @ 256 cycles
Rise/fall times less than 1.2ns driving 15pF
On-chip loop filter components
3.0V-5.5V supply range
8-pin, 150-mil SOIC package
Specifically designed to support the high-speed
clocking requirements of Gigabit Ethernet systems.
PRODUCT PREVIEW documents contain information on new
products in the sampling or preproduction phase of development.
Characteristic data and other specifications are subject to change
without notice.
Preliminary Product Preview
2
ICS9112-43/44
Preliminary Product Preview
Pin Descriptions
Pin Configurations
8-Pin SOIC
Functionality
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ICS9112-43/44
Preliminary Product Preview
Note 1:
Parameter is guaranteed by design and characterization. Not 100% tested in production.
Electrical Characteristics at 5.0V
Operating V
DD
= +4.5V to +5.5V; T
A
=0C to 70C unless otherwise stated
Absolute Maximum Ratings
AVDD, VDD referenced to GND . . . . . . . . . . . . . . . 7V
Operating temperature under bias. . . . . . . . . . . . . . . . 0C to +70C
Storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C
Voltage on I/O pins referenced to GND. . . . . . . . . . . GND -0.5V to VDD +0.5V
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 Watts
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect product reliability.
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ICS9112-43/44
Preliminary Product Preview
Electrical Characteristics at 3.3V
Note 1:
Parameter is guaranteed by design and characterization. Not 100% tested in production.
Operating V
DD
= +3.0V to +3.7V; T
A
=0C to 70C unless otherwise stated
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ICS9112-43/44
Preliminary Product Preview
8-Pin Plastic SOIC Package
ICS XXXX M-PPP
Example:
Package Type
M=SOIC, SOP
Device Type (consists of 3 or 4 digit numbers)
ICS=Standard Device
Prefix
Ordering Information
ICS9112M-43/44
Pattern Number(2 or 3 digit number for parts with ROM code patterns)
PRODUCT PREVIEW documents contain information on new
products in the sampling or preproduction phase of development.
Characteristic data and other specifications are subject to change
without notice.