2000 Integrated Device Technology, Inc.
FEBRUARY 2001
DSC-3090/05
1
Features
x
x
x
x
x
High-speed (equal access and cycle time)
Military: 25/45ns (max.)
Industrial: 25ns (max.)
Commercial: 15/20/25ns (max.)
x
x
x
x
x
Low power consumption
x
x
x
x
x
Battery backup operation--2V data retention voltage
(IDT6168LA only)
x
x
x
x
x
Available in high-density 20-pin ceramic or plastic DIP and
20-pin leadless chip carrier (LCC)
x
x
x
x
x
Produced with advanced CMOS high-performance
technology
x
x
x
x
x
CMOS process virtually eliminates alpha particle
soft-error rates
x
x
x
x
x
Bidirectional data input and output
x
x
x
x
x
Military product compliant to MIL-STD-883, Class B
Description
The IDT6168 is a 16,384-bit high-speed static RAM organized
as 4K x 4. It is fabricated using lDT's high-performance, high-reliability
Functional Block Diagram
A
0
ADDRESS
DECODER
16,384-BIT
MEMORY ARRAY
I/O CONTROL
3090 drw 01
INPUT
DATA
CONTROL
WE
CS
V
CC
GND
A
11
I/O
0
I/O
1
I/O
2
I/O
3
,
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective approach for
high-speed memory applications.
Access times as fast 15ns are available. The circuit also offers a
reduced power standby mode. When
CS goes HIGH, the circuit will
automatically go to, and remain in, a standby mode as long as
CS remains
HIGH. This capability provides significant system-level power and cooling
savings. The low-power (LA) version also offers a battery backup data
retention capability where the circuit typically consumes only 1W
operating off a 2V battery. All inputs and outputs of the IDT6168 are
TTL-compatible and operate from a single 5V supply.
The IDT6168 is packaged in either a space saving 20-pin, 300-mil
ceramic or plastic DIP or a 20-pin LCC providing high board-level
packing densities.
Military grade product is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level of
performance and reliability.
CMOS Static RAM
16K (4K x 4-Bit)
IDT6168SA
IDT6168LA
2
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges
Pin Configurations
Absolute Maximum Ratings
(1)
Recommended DC Operating
Conditions
Recommended Operating
Temperature and Supply Voltage
Truth Table
(1)
DIP/LCC
Top View
Capacitance
(T
A
= +25C, f = 1.0MHz)
Pin Descriptions
3090 drw 02
5
6
7
8
9
10
A
0
1
2
3
4
20
P20-1
D20-1
L20-1
A
1
A
2
A
3
A
4
A
5
A
6
V
CC
CS
A
11
A
10
WE
GND
A
9
A
8
19
18
17
16
15
14
13
12
11
I/O
3
A
7
I/O
2
I/O
1
I/O
0
,
Name
Description
A
0
- A
11
Address Inputs
CS
Chip Select
WE
Write Enable
I/O
0
- I/O
3
Data Input/Output
V
CC
Power
GND
Ground
3090 tbl 01
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
7
pF
C
I/O
I/O Capacitance
V
OUT
= 0V
7
pF
3090 tbl 02
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't Care
Mode
CS
WE
Output
Power
Standby
H
X
High-Z
Standby
Read
L
H
D
OUT
Active
Write
L
L
D
IN
Active
3090 tbl 03
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Symbol
Rating
Com'l.
Mil.
Unit
V
TERM
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
T
A
Operating
Temperature
0 to +70
-55 to +125
o
C
T
BIAS
Temperature
Under Bias
-55 to +125
-65 to +135
o
C
T
STG
Storage Temperature
-55 to +125
-65 to +150
o
C
P
T
Power Dissipation
1.0
1.0
W
I
OUT
DC Output Current
50
50
mA
3090 tbl 04
NOTE:
1. V
IL
(min.) = 3.0V for pulse width less than 20ns, once per cycle.
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
6.0
V
V
IL
Input Low Voltage
-0.5
(1)
____
0.8
V
3090 tbl 05
Grade
Temperature
GND
Vcc
Military
-55
O
C to +125
O
C
0V
5V 10%
Industrial
-45
O
C to +85
O
C
0V
5V 10%
Commercial
0
O
C to +70
O
C
0V
5V 10%
3090 tbl 06
6.42
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges
3
DC Electrical Characteristics
(1)
(V
CC
= 5.0V 10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
DC Electrical Characteristics
V
CC
= 5.0V 10%
Symbol
Parameter
Power
6168SA15
6168SA20
6168LA20
6168SA25
6168LA25
6168SA45
6168LA45
Unit
Com'l.
Mil.
Com'l.
Mil.
Com'l.
& Ind.
Mil.
Com'l.
Mil.
I
CC1
Operating Power Supply Current
CS < V
IL
, Outputs Open
V
CC
= Max., f
=
0
(2)
SA
110
____
90
____
90
100
____
100
mA
LA
____
____
70
____
70
80
____
80
I
CC2
Dynamic Operating Current
CS < V
IL
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA
145
____
120
____
110
120
____
110
mA
LA
____
____
100
____
90
100
____
80
I
SB
Standby Power Supply Current
(TTL Level)
CS > V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
SA
55
____
45
____
35
45
____
35
mA
LA
____
____
30
____
25
30
____
25
I
SB1
Full Standby Power Supply
Current (CMOS Level)
CS > V
HC
, V
CC
= Max.,
V
IN
< V
LC
or V
IN
> V
HC
, f = 0
(2)
SA
20
____
20
____
3
10
____
10
mA
LA
____
____
0.5
____
0.5
0.3
____
0.3
3090 tbl 07
NOTES:
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
, only address inputs are cycling at f
MAX
. f = 0 means no address inputs are changing.
Symbol
Parameter
Test Conditions
IDT6168SA
IDT6168LA
Unit
Min.
Max.
Min.
Max.
|I
LI
|
Input Leakage Current
V
CC
= Max.,
V
IN
=
GND to V
CC
MIL.
COM'L.
____
____
10
2
____
____
5
2
A
|I
LO
|
Output Leakage Current
V
CC
= Max.,
CS = V
IH
,
V
OUT
= GND to V
CC
MIL.
COM'L.
____
____
10
2
____
____
5
2
A
V
OL
Output LOW Voltage
I
OL
= 10mA, V
CC
= Min.
____
0.5
____
0.5
V
I
OL
= 8mA, V
CC
= Min.
____
0.4
____
0.4
V
OH
Output HIGH Voltage
I
OH
= -4mA, V
CC
= Min.
2.4
____
2.4
____
V
3090 tbl 09
4
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges
Low V
CC
Data Retention Waveform
AC Test Conditions
Figure 1. AC Test Load
Figure 2. AC Test Load
(for t
CHZ
, t
CLZ
, t
WHZ
and t
OW
)
*Includes scope and jig capacitances
Data Retention Characteristics
(LA Version Only)
V
LC
= 0.2V, V
HC
= V
CC
0.2V
3090 drw 03
V
CC
CS
DATA
RETENTION
MODE
4.5V
4.5V
V
DR
2V
V
IH
V
IH
t
R
t
CDR
V
DR
,
3090 drw 04
480
30pF*
255
DATA
OUT
5V
3090 drw 05
480
5pF*
255
DATA
OUT
5V
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
3090 tbl 11
NOTES:
1. T
A
= +25C.
2. at V
CC
= 2V
3. at V
CC
= 3V
4. t
RC
= Read Cycle Time.
5. This parameter is guaranteed by device characterization, but is not production tested.
IDT6168LA
Symbol
Parameter
Test Condition
Min.
Typ.
(1)
Max.
Unit
V
DR
V
CC
for Data Retention
2.0
____
____
V
I
CCDR
Data Retention Current
CS > V
HC
V
IN
> V
HC
or < V
LC
MIL.
____
____
0.5
(2)
1.0
(3)
100
(2)
150
(3)
A
COM'L.
____
____
0.5
(2)
1.0
(3)
20
(2)
30
(3)
A
t
CDR
(5)
Chip Deselect to Data
Retention Time
0
____
____
ns
t
R
(5)
Operation Recovery Time
t
RC
(4)
____
____
ns
3090 tbl 10
6.42
IDT6168SA/LA
CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges
5
Timing Waveform of Read Cycle No. 1
(1, 2)
Timing Waveform of Read Cycle No. 2
(1, 3)
NOTES:
1.
WE is HIGH for Read cycle.
2.
CS is LOW for Read cycle.
3. Device is continuously selected,
CS is LOW.
3. Address valid prior to or coincident with
CS transition LOW.
4. Transition is measured 200mV from steady state.
AC Electrical Characteristics
(V
CC
= 5.0V 10%, All Temperature Ranges)
3090 drw 06
ADDRESS
DATA
OUT
t
RC
t
AA
t
OH
PREVIOUS DATA VALID
DATA VALID
,
t
PD
3090 drw 07
DATA
OUT
CS
t
ACS
(4)
t
CLZ
(3)
t
CHZ
t
PU
I
CC
I
SB
SUPPLY
CURRENT
V
CC
t
RC
DATA
OUT
VALID
HIGH IMPEDANCE
HIGH IMPEDANCE
,
NOTES:
1. 0 to +70C temperature range only.
2. 55C to +125C temperature range only.
3. This parameter is guaranteed with AC Test load (Figure 2) by device characterization, but is not production tested.
Symbol
Parameter
6168SA15
(1)
6168SA20
(1)
6168LA20
(1)
6168SA25
6168LA25
6168SA45
(2)
6168LA45
(2)
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Read Cycle
t
RC
Read Cycle Time
15
____
20
____
25
____
45
____
ns
t
AA
Address Access Time
____
15
____
20
____
25
____
45
ns
t
ACS
Chip Select Access Time
____
15
____
20
____
25
____
45
ns
t
CLZ
(3)
Chip Select to Output in Low-Z
3
____
5
____
5
____
5
____
ns
t
CHZ
(3)
Chip Desele ct to Output in High-Z
____
8
____
10
____
10
____
25
ns
t
OH
Output Hold from Address Change
3
____
3
____
3
____
3
____
ns
t
PU
(3)
Chip Sele ct to Power Up Time
0
____
0
____
0
____
0
____
ns
t
PD
(3)
Chip Deselect to Power Down Time
____
35
____
20
____
25
____
40
ns
3090 tbl 12
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