IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22
1
Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AUGUST 1995
1995 Integrated Device Technology, Inc.
6.22
DSC-4217/5
FAST CMOS 10-BIT
BUFFERS
DESCRIPTION:
The FCT827T is built using an advanced dual metal CMOS
technology.
The FCT827T/FCT2827T 10-bit bus drivers provide high-
performance bus interface buffering for wide data/address
paths or buses carrying parity. The 10-bit buffers have NAND-
ed output enables for maximum control flexibility.
All of the FCT827T high-performance interface family are
designed for high-capacitance load drive capability, while
providing low-capacitance bus loading at both inputs and
outputs. All inputs have clamp diodes to ground and all outputs
are designed for low-capacitance bus loading in high-imped-
ance state.
The FCT2827T has balanced output drive with current
limiting resistors. This offers low ground bounce, minimal
undershoot and controlled output fall times-reducing the need
for external series terminating resistors. FCT2827T parts are
plug-in replacements for FCT827T parts.
1
IDT54/74FCT827AT/BT/CT/DT
IDT54/74FCT2827AT/BT/CT
FEATURES:
Common features:
Low input and output leakage
1
A (max.)
CMOS power levels
True TTL input and output compatibility
V
OH
= 3.3V (typ.)
V
OL
= 0.3V (typ.)
Meets or exceeds JEDEC standard 18 specifications
Product available in Radiation Tolerant and Radiation
Enhanced versions
Military product compliant to MIL-STD-883, Class B
and DESC listed (dual marked)
Available in DIP, SOIC, SSOP, QSOP, CERPACK
and LCC packages
Features for FCT827T:
A, B, C and D speed grades
High drive outputs (-15mA I
OH
, 48mA I
OL
)
Features for FCT2827T:
A, B and C speed grades
Resistor outputs
(-15mA I
OH
, 12mA I
OL
Com.)
(-12mA I
OH
, 12mA I
OL
Mil.)
Reduced system switching noise
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
2573 drw 01
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
D
8
D
9
OE
1
OE
2
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
FUNCTIONAL BLOCK DIAGRAM
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22
2
PIN CONFIGURATIONS
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
2573 drw 02
2573 drw 03
LCC
TOP VIEW
OE
1
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
Y
0
Y
1
Y
2
Y
3
Y
4
Y
6
Y
5
Y
7
V
CC
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
P24-1
D24-1
SO24-2
SO24-7
SO24-8
&
E24-1
11
12
21
22
23
24
D
8
D
9
Y
8
Y
9
OE
2
GND
INDEX
D
2
Y
2
Y
3
Y
4
NC
Y
5
OE
1
D
1
NC
V
CC
Y
0
D
8
GND
OE
2
Y
9
Y
8
3 2
20
19
1
4
5
6
7
8
18
17
16
15
14
9
10
11
1213
L28-1
D
3
D
4
NC
D
5
D
6
D
7
D
0
Y
1
Y
6
Y
7
21
22
23
24
25
26
27
28
D
9
NC
PIN DESCRIPTION
2573 tbl 01
Names
I/O
Description
OE
I
I
When both are LOW the outputs are
enabled. When either one or both are
HIGH the outputs are High Z.
D
I
I
10-bit data input.
Y
I
O
10-bit data output.
CAPACITANCE
(T
A
= +25
C, f = 1.0MHz)
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
Military
Unit
V
TERM(2)
Terminal Voltage
with Respect to
GND
0.5 to +7.0
0.5 to +7.0
V
V
TERM(3)
Terminal Voltage
with Respect to
GND
0.5 to
V
CC
+0.5
0.5 to
V
CC
+0.5
V
T
A
Operating
Temperature
0 to +70
55 to +125
C
T
BIAS
Temperature
Under Bias
55 to +125
65 to +135
C
T
STG
Storage
Temperature
55 to +125
65 to +150
C
P
T
Power Dissipation
0.5
0.5
W
I
OUT
DC Output
Current
60 to +120 60 to +120 mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
V
CC
by +0.5V unless otherwise noted.
2. Input and V
CC
terminals only.
3. Outputs and I/O terminals only.
2573 lnk 03
Symbol
Parameter
(1)
Conditions
Typ.
Max. Unit
C
IN
Input
Capacitance
V
IN
= 0V
6
10
pF
C
OUT
Output
Capacitance
V
OUT
= 0V
8
12
pF
NOTE:
1. This parameter is measured at characterization but not tested.
2573 lnk 04
Inputs
Output
OE
OE
1
OE
OE
2
D
I
Y
I
Function
L
L
L
L
L
H
L
H
Transparent
H
X
X
H
X
X
Z
Z
Three-State
NOTE:
2573 tbl 02
1. H = HIGH, L = LOW, X = Don't Care, Z = High Impedance
FUNCTION TABLE
(1)
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22
3
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: T
A
= 0
C to +70
C, V
CC
= 5.0V
5%; Military: T
A
= 55
C to +125
C, V
CC
= 5.0V
10%
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
V
IH
Input HIGH Level
Guaranteed Logic HIGH Level
2.0
--
--
V
V
IL
Input LOW Level
Guaranteed Logic LOW Level
--
--
0.8
V
I
I H
Input HIGH Current
(4)
V
CC
= Max.
V
I
= 2.7V
--
--
1
A
I
I L
Input LOW Current
(4)
V
I
= 0.5V
--
--
1
I
OZH
High Impedance Output Current
V
CC
= Max.
V
O
= 2.7V
--
--
1
A
I
OZL
(3-State Output pins)
(4)
V
O
= 0.5V
--
--
1
I
I
Input HIGH Current
(4)
V
CC
= Max., V
I
= V
CC
(Max.)
--
--
1
A
V
IK
Clamp Diode Voltage
V
CC
= Min., I
IN
= 18mA
--
0.7
1.2
V
V
H
Input Hysteresis
--
--
200
--
mV
I
CC
Quiescent Power Supply Current
V
CC
= Max., V
IN
= GND or V
CC
--
0.01
1
mA
2573 lnk 05
OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T
2573 lnk 07
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
I
ODL
Output LOW Current
V
CC
= 5V, V
IN
= V
IH
or
V
IL,
V
OUT
= 1.5V
(3)
16
48
--
mA
I
ODH
Output HIGH Current
V
CC
= 5V, V
IN
= V
IH
or V
IL,
V
OUT
= 1.5V
(3)
16
48
--
mA
V
OH
Output HIGH Voltage
V
CC
= Min.
V
IN
= V
IH
or
V
IL
I
OH
= 12mA MIL.
I
OH
= 15mA COM'L.
2.4
3.3
--
V
V
OL
Output LOW Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OL
= 12mA
--
0.3
0.50
V
2573 lnk 06
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OH
= 6mA MIL.
I
OH
= 8mA COM'L.
2.4
3.3
--
V
I
OH
= 12mA MIL.
I
OH
= 15mA COM'L.
2.0
3.0
--
V
V
OL
Output LOW Voltage
V
CC
= Min.
V
IN
= V
IH
or V
IL
I
OL
= 32mA MIL.
I
OL
= 48mA COM'L.
--
0.3
0.5
V
I
OS
Short Circuit Current
V
CC
= Max., V
O
= GND
(3)
60
120
225
mA
OUTPUT DRIVE CHARACTERISTICS FOR FCT827T
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25
C ambient.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. The test limit for this parameter is
5
A at T
A
= 55
C.
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22
4
POWER SUPPLY CHARACTERISTICS
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
CP/
2 + f
i
N
i
)
I
CC
= Quiescent Current
I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
2573 tbl 08
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
I
CC
Quiescent Power Supply Current
TTL Inputs HIGH
V
CC
= Max.
V
IN
= 3.4V
(3)
--
0.5
2.0
mA
I
CCD
Dynamic Power Supply Current
(4)
V
CC
= Max.
Outputs Open
V
IN
= V
CC
V
IN
= GND
FCT827T
--
0.15
0.25
mA/
MHz
OE
1
=
OE
2
= GND
One Input Toggling
50% Duty Cycle
FCT2827T
--
0.06
0.12
I
C
Total Power Supply Current
(6)
V
CC
= Max.
V
IN
= V
CC
FCT827T
--
1.5
3.5
mA
Outputs Open
fi = 10MHz
V
IN
= GND FCT2827T
--
0.6
2.2
50% Duty Cycle
V
IN
= 3.4V
FCT827T
--
1.8
4.5
OE
1
=
OE
2
= GND
One Bit Toggling
V
IN
= GND FCT2827T
--
0.9
3.2
V
CC
= Max.
V
IN
= V
CC
FCT827T
--
3.0
6.0
(5)
Outputs Open
fi = 2.5MHz
V
IN
= GND FCT2827T
--
1.2
3.4
(5)
50% Duty Cycle
V
IN
= 3.4V
FCT827T
--
5.0
14.0
(5)
OE
1
=
OE
2
= GND
Eight Bits Toggling
V
IN
= GND FCT2827T
--
3.2
11.4
(5)
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22
5
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
FCT827AT/FCT2827AT
FCT827BT/FCT2827BT
Com'l.
Mil.
Com'l.
Mil.
Symbol
Parameter
Condition
(1)
Min.
(2)
Max.
Min.
(2)
Max.
Min.
(2)
Max.
Min.
(2)
Max.
Unit
t
PLH
t
PHL
Propagation Delay
D
I
to Y
I
C
L
= 50pF
R
L
= 500
1.5
8.0
1.5
9.0
1.5
5.0
1.5
6.5
ns
C
L
= 300pF
(3)
R
L
= 500
1.5
15.0
1.5
17.0
1.5
13.0
1.5
14.0
t
PZH
t
PZL
Output Enable Time
OE
I
to Y
I
C
L
= 50pF
R
L
= 500
1.5
12.0
1.5
13.0
1.5
8.0
1.5
9.0
ns
C
L
= 300pF
(3)
R
L
= 500
1.5
23.0
1.5
25.0
1.5
15.0
1.5
16.0
t
PHZ
t
PLZ
Output Disable Time
OE
I
to Y
I
C
L
= 5pF
(3)
R
L
= 500
1.5
9.0
1.5
9.0
1.5
6.0
1.5
7.0
ns
C
L
= 50pF
R
L
= 500
1.5
10.0
1.5
10.0
1.5
7.0
1.5
8.0
2573 tbl 09
NOTES:
2573 tbl 10
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These conditions are guaranteed but not tested.
FCT827CT/FCT2827CT
FCT827DT
Com'l.
Mil.
Com'l.
Mil.
Symbol
Parameter
Condition
(1)
Min.
(2)
Max.
Min.
(2)
Max.
Min.
(2)
Max.
Min.
(2)
Max.
Unit
t
PLH
t
PHL
Propagation Delay
D
I
to Y
I
C
L
= 50pF
R
L
= 500
1.5
4.4
1.5
5.0
1.5
3.8
--
--
ns
C
L
= 300pF
(3)
R
L
= 500
1.5
10.0
1.5
11.0
1.5
7.5
--
--
t
PZH
t
PZL
Output Enable Time
OE
I
to Y
I
C
L
= 50pF
R
L
= 500
1.5
7.0
1.5
8.0
1.5
5.0
--
--
ns
C
L
= 300pF
(3)
R
L
= 500
1.5
14.0
1.5
15.0
1.5
9.0
--
--
t
PHZ
t
PLZ
Output Disable Time
OE
I
to Y
I
C
L
= 5pF
(3)
R
L
= 500
1.5
5.7
1.5
6.7
1.5
4.3
--
--
ns
C
L
= 50pF
R
L
= 500
1.5
6.0
1.5
7.0
1.5
4.3
--
--
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22
6
TEST CIRCUITS AND WAVEFORMS
TEST CIRCUITS FOR ALL OUTPUTS
ENABLE AND DISABLE TIMES
PROPAGATION DELAY
SWITCH POSITION
Pulse
Generator
R
T
D.U.T.
V
CC
V
IN
C
L
V
OUT
50pF
500
500
7.0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
DATA
INPUT
TIMING
INPUT
ASYNCHRONOUS CONTROL
PRESET
CLEAR
ETC.
SYNCHRONOUS CONTROL
t
SU
t
H
t
REM
t
SU
t
H
HIGH-LOW-HIGH
PULSE
LOW-HIGH-LOW
PULSE
t
W
1.5V
1.5V
SAME PHASE
INPUT TRANSITION
3V
1.5V
0V
1.5V
V
OH
t
PLH
OUTPUT
OPPOSITE PHASE
INPUT TRANSITION
3V
1.5V
0V
t
PLH
t
PHL
t
PHL
V
OL
CONTROL
INPUT
3V
1.5V
0V
3.5V
0V
OUTPUT
NORMALLY
LOW
OUTPUT
NORMALLY
HIGH
SWITCH
CLOSED
SWITCH
OPEN
V
OL
0.3V
0.3V
t
PLZ
t
PZL
t
PZH
t
PHZ
3.5V
0V
1.5V
1.5V
ENABLE
DISABLE
V
OH
PRESET
CLEAR
CLOCK ENABLE
ETC.
NOTES:
1. Diagram shown for input Control Enable-LOW and input Control Disable-
HIGH
2. Pulse Generator for All Pulses: Rate
1.0MHz; t
F
2.5ns; t
R
2.5ns
Test
Switch
Disable Low
Enable Low
Closed
All Other Tests
Open
Open Drain
2573 lnk 11
DEFINITIONS:
C
L
=
Load capacitance: includes jig and probe capacitance.
R
T
=
Termination resistance: should be equal to Z
OUT
of the Pulse
Generator.
SET-UP, HOLD AND RELEASE TIMES
PULSE WIDTH
2573 drw 04
2573 drw 05
2573 drw 06
2573 drw 07
2573 drw 08
IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.22
7
ORDERING INFORMATION
IDT XX FCT
XX
Device Type
X
Package
X
Process
Blank
B
P
D
E
L
SO
PY
Q
827AT
827BT
827CT
827DT
Commercial
MIL-STD-883, Class B
Plastic DIP
CERDIP
CERPACK
Leadless Chip Carrier
Small Outline IC
Shrink Small Outline Package
Quarter-size Small Outline Package
Non-Inverting 10-Bit Buffer
54
74
55
C to +125
C
0
C to +70
C
Temp. Range
X
Family
Blank
2
High Drive
Balanced Drive
2573 drw 09
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