Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
MAY 1992
1992 Integrated Device Technology, Inc.
7.20
DSC-4612/2
FEATURES:
Faster than AMD's Am29827 series
Equivalent to AMD's Am29827 bipolar buffers in pinout/
function, speed and output drive over full temperature
and voltage supply extremes
IDT54/74FCT827A equivalent to FAST
TM
IDT54/74FCT827B 35% faster than FAST
IDT54/74FCT827C 45% faster than FAST
I
OL
= 48mA (commercial), and 32mA (military)
Clamp diodes on all inputs for ringing suppression
CMOS power levels (1mW typ. static)
TTL input and output level compatible
CMOS output level compatible
Substantially lower input current levels than AMD's
bipolar Am29800 series (5
A max.)
Product available in Radiation Tolerant and Radiation
Enhanced versions
Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT54/74FCT800 series is built using an advanced
dual metal CMOS technology.
The IDT54/74FCT827A/B/C 10-bit bus drivers provide
high-performance bus interface buffering for wide data/ ad-
dress paths or buses carrying parity. The 10-bit buffers have
NAND-ed output enables for maximum control flexibility.
All of the IDT54/74FCT800 high-performance interface
family are designed for high-capacitance load drive capability,
while providing low-capacitance bus loading at both inputs
and outputs. All inputs have clamp diodes and all outputs are
designed for low-capacitance bus loading in high-impedance
state.
IDT54/74FCT827A
IDT54/74FCT827B
IDT54/74FCT827C
D
0
Y
0
D
1
Y
1
D
2
Y
2
D
3
Y
3
D
4
Y
4
D
5
Y
5
D
6
Y
6
D
7
Y
7
D
8
Y
8
D
9
Y
9
OE
1
OE
2
2609 drw 01
HIGH-PERFORMANCE
CMOS BUFFERS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FAST is a trademark of National Semiconductor Co.
FUNCTIONAL BLOCK DIAGRAM
PRODUCT SELECTOR GUIDE
2609 tbl 01
1
10-Bit Buffer
Non-inverting
IDT54/74FCT827A/B/C
7.20
2
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
LOGIC SYMBOL
PIN CONFIGURATIONS
PIN DESCRIPTION
FUNCTION TABLE
(1)
NOTE:
2609 tbl 03
1. H = HIGH, L = LOW, X = Don't Care, Z = High Impedance
2609 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
CAPACITANCE
(T
A
= +25
C, f = 1.0MHz)
NOTES:
2609 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating con-
ditions for extended periods may affect reliability. No terminal voltage may
exceed V
CC
by +0.5V unless otherwise noted.
2. Input and VCC terminals only.
3. Outputs and I/O terminals only.
Symbol
Parameter
(1)
Conditions
Typ.
Max.
Unit
C
IN
Input
Capacitance
V
IN
= 0V
6
10
pF
C
OUT
Output
Capacitance
V
OUT
= 0V
8
12
pF
NOTE:
2609 tbl 05
1. This parameter is measured at characterization but not tested.
DIP/CERPACK/SOIC
TOP VIEW
LCC
TOP VIEW
Symbol
Rating
Commercial
Military
Unit
V
TERM(2)
Terminal Voltage
with Respect to
GND
0.5 to +7.0
0.5 to +7.0
V
V
TERM(3)
Terminal Voltage
with Respect to
GND
0.5 to V
CC
0.5 to V
CC
V
T
A
Operating
Temperature
0 to +70
55 to +125
C
T
BIAS
Temperature
Under Bias
55 to +125
65 to +135
C
T
STG
Storage
Temperature
55 to +125
65 to +150
C
P
T
Power Dissipation
0.5
0.5
W
I
OUT
DC Output
Current
120
120
mA
OE
1
D
0-9
Y
0-9
10
OE
2
OE
1
D
0
D
1
D
2
D
3
D
4
D
5
D
6
D
7
GND
Y
0
Y
1
Y
2
Y
3
Y
4
Y
6
Y
5
Y
7
V
CC
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
P24-1
D24-1
E24-1
&
SO24-2
11
12
21
22
23
24
D
8
D
9
Y
8
Y
9
INDEX
D
2
Y
2
Y
3
Y
4
NC
Y
5
OE
1
D
1
NC
V
CC
Y
0
D
8
GND
OE
2
Y
9
Y
8
3 2
20
19
1
4
5
6
7
8
18
17
16
15
14
9
10
11
1213
L28-1
D
3
D
4
NC
D
5
D
6
D
7
D
0
Y
1
Y
6
Y
7
21
22
23
24
25
26
27
28
D
9
NC
OE
2
10
2609 drw 02
2609 drw 03
2609 drw 04
Name
I/O
Description
OE
I
I
When both are LOW, the outputs are
enabled. When either one or both are
HIGH, the outputs are High Z.
D
I
I
10-bit data input.
Y
I
O
10-bit data output.
Inputs
Output
OE
OE
1
OE
OE
2
D
I
Y
I
Function
L
L
L
L
L
H
L
H
Transparent
H
X
X
H
X
X
Z
Z
Three-State
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7.20
3
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: V
LC
= 0.2V; V
HC
= V
CC
0.2V
Commercial: T
A
= 0
C to +70
C, V
CC
= 5.0V
5%; Military: T
A
= 55
C to +125
C, V
CC
= 5.0V
10%
NOTES:
2609 tbl 06
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
V
IH
Input HIGH Level
Guaranteed Logic HIGH Level
2.0
--
--
V
V
IL
Input LOW Level
Guaranteed Logic LOW Level
--
--
0.8
V
I
I H
Input HIGH Current
V
CC
= Max.
V
I
= V
CC
--
--
5
A
V
I
= 2.7V
--
--
5
(4)
I
I L
Input LOW Current
V
I
= 0.5V
--
--
5
(4)
V
I
= GND
--
--
5
I
OZH
Off State (High Impedance)
V
CC
= Max.
V
O
= V
CC
--
--
10
A
Output Current
V
O
= 2.7V
--
--
10
(4)
I
OZL
V
O
= 0.5V
--
--
10
(4)
V
O
= GND
--
--
10
V
IK
Clamp Diode Voltage
V
CC
= Min., I
N
= 18mA
--
0.7
1.2
V
I
OS
Short Circuit Current
V
CC
= Max.
(3)
, V
O
= GND
75
120
--
mA
V
OH
Output HIGH Voltage
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OH
= 32
A
V
HC
V
CC
--
V
V
CC
= Min.
I
OH
= 300
A
V
HC
V
CC
--
V
IN
= V
IH
or V
IL
I
OH
= 15mA MIL.
2.4
4.3
--
I
OH
= 24mA COM'L.
2.4
4.3
--
V
OL
Output LOW Voltage
V
CC
= 3V, V
IN
= V
LC
or V
HC
, I
OL
= 300
A
--
GND
V
LC
V
V
CC
= Min.
I
OL
= 300
A
--
GND
V
LC(4)
V
IN
= V
IH
or V
IL
I
OL
= 32mA MIL.
--
0.3
0.5
I
OL
= 48mA COM'L.
--
0.3
0.5
7.20
4
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
V
LC
= 0.2V; V
HC
= V
CC
0.2V
NOTES:
2609 tbl 07
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25
C ambient.
3. Per TTL driven input (V
IN
= 3.4V); all other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
I
CC
D
H
N
T
+ I
CCD
(f
CP
/2 + f
i
N
i
)
I
CC
= Quiescent Current
I
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
f
i
= Input Frequency
N
i
= Number of Inputs at f
i
All currents are in milliamps and all frequencies are in megahertz.
Symbol
Parameter
Test Conditions
(1)
Min.
Typ.
(2)
Max.
Unit
I
CC
Quiescent Power Supply Current
V
CC
= Max.
V
IN
V
HC
; V
IN
V
LC
--
0.2
1.5
mA
I
CC
Quiescent Power Supply Current
TTL Inputs HIGH
V
CC
= Max.
V
IN
= 3.4V
(3)
--
0.5
2.0
mA
I
CCD
Dynamic Power Supply Current
(4)
V
CC
= Max.
Outputs Open
OE
1
=
OE
2
= GND
One Input Toggling
50% Duty Cycle
V
IN
V
HC
V
IN
V
LC
--
0.15
0.25
mA/
MHz
I
C
Total Power Supply Current
(6)
V
CC
= Max.
Outputs Open
fi = 10MHz
V
IN
V
HC
V
IN
V
LC
(FCT)
--
1.7
4.0
mA
50% Duty Cycle
OE
1
=
OE
2
= GND
One Bit Toggling
V
IN
= 3.4V
V
IN
= GND
--
2.0
5.0
V
CC
= Max.
Outputs Open
fi = 2.5MHz
V
IN
V
HC
V
IN
V
LC
(FCT)
--
3.2
6.5
(5)
50% Duty Cycle
OE
1
=
OE
2
= GND
Eight Bits Toggling
V
IN
= 3.4V
V
IN
= GND
--
5.2
14.5
(5)
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7.20
5
SWITCHING CHARACTERISTICS OVER OPERATING RANGE
NOTES:
2609 tbl 08
1. See test circuit and waveforms.
2. Minimum limits are guaranteed but not tested on Propagation Delays.
3. These parameters are guaranteed but not tested.
IDT54/74FCT827A
IDT54/74FCT827B
IDT54/74FCT827C
Com'l.
Mil.
Com'l.
Mil.
Com'l.
Mil.
Parameter
Description
Conditions
(1)
Min.
(2)
Max. Min.
(2)
Max. Min.
(2)
Max. Min.
(2)
Max. Min.
(2)
Max. Min.
(2)
Max.
Unit
t
PLH
t
PHL
Propagation Delay
D
I
to Y
I
C
L
= 50pF
R
L
= 500
1.5
8.0
1.5
9.0
1.5
5.0
1.5
6.5
1.5
4.4
1.5
5.0
ns
C
L
= 300pF
(3)
R
L
= 500
1.5
15.0
1.5
17.0
1.5
13.0
1.5
14.0
1.5 10.0
1.5
11.0
t
PZH
t
PZL
Output Enable Time
OE
I
to Y
I
C
L
= 50pF
R
L
= 500
1.5
12.0
1.5
13.0
1.5
8.0
1.5
9.0
1.5
7.0
1.5
8.0
ns
C
L
= 300pF
(3)
R
L
= 500
1.5
23.0
1.5
25.0
1.5
15.0
1.5
16.0
1.5 14.0
1.5
15.0
t
PHZ
t
PLZ
Output Disable Time
OE
I
to Y
I
C
L
= 5pF
(3)
R
L
= 500
1.5
9.0
1.5
9.0
1.5
6.0
1.5
7.0
1.5
5.7
1.5
6.7
ns
C
L
= 50pF
R
L
= 500
1.5
10.0
1.5
10.0
1.5
7.0
1.5
8.0
1.5
6.0
1.5
7.0
7.20
6
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TEST CIRCUITS AND WAVEFORMS
TEST CIRCUITS FOR ALL OUTPUTS
ENABLE AND DISABLE TIMES
PROPAGATION DELAY
SET-UP, HOLD AND RELEASE TIMES
PULSE WIDTH
Pulse
Generator
DATA
INPUT
TIMING
INPUT
ASYNCHRONOUS CONTROL
PRESET
CLEAR
ETC.
SYNCHRONOUS CONTROL
PRESET
CLEAR
CLOCK ENABLE
ETC.
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
3V
1.5V
0V
t
SU
t
H
t
REM
H
t
SU
R
T
D.U.T.
V
CC
V
IN
C
L
V
OUT
50pF
500
500
7.0V
SAME PHASE
INPUT TRANSITION
3V
1.5V
0V
1.5V
V
OH
V
OL
t
PLH
t
PHL
OUTPUT
OPPOSITE PHASE
INPUT TRANSITION
CONTROL
INPUT
3V
1.5V
0V
3.5V
0V
OUTPUT
NORMALLY
LOW
OUTPUT
NORMALLY
HIGH
SWITCH
CLOSED
SWITCH
OPEN
V
OL
V
OH
3V
1.5V
0V
t
PLH
t
PHL
0.3V
0.3V
t
PLZ
t
PZL
t
PZH
t
PHZ
3.5V
0V
1.5V
1.5V
ENABLE
DISABLE
HIGH-LOW-HIGH
PULSE
LOW-HIGH-LOW
PULSE
t
W
1.5V
1.5V
t
NOTES
2609 drw 11
1. Diagram shown for input Control Enable-LOW and input Control
Disable-HIGH.
2. Pulse Generator for All Pulses: Rate
1.0 MHz; Z
O
50
; t
F
2.5ns;
t
R
2.5ns.
SWITCH POSITION
Test
Switch
Open Drain
Disable Low
Closed
Enable Low
All Other Tests
Open
DEFINITIONS:
2609 tbl 09
C
L
= Load capacitance: includes jig and probe capacitance.
R
T
= Termination resistance: should be equal to Z
OUT
of the Pulse
Generator.
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7.20
7
ORDERING INFORMATION
2609 cnv* 10
IDTXXFCT
XX
Device Type
X
Package
X
Process
Blank
B
P
D
E
L
SO
827A
827B
827C
Commercial
MIL-STD-883, Class B
Plastic DIP
CERDIP
CERPACK
Leadless Chip Carrier
Small Outline IC
Non-Inverting 10-Bit Buffer
Fast Non-Inverting 10-Bit Buffer
Super Fast Non-Inverting 10-Bit Buffer
54
74
55
C to +125
C
0
C to +70
C
PDF 
ZIP