Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
MARCH 1996
1996 Integrated Device Technology, Inc.
5.1
3089/1
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
The IDT logo is aregistered trademark of Integrated Device Technology, Inc.
FEATURES:
High-speed access and chip select times
-- Military: 20/25/35/45/55/70/90/120/150ns (max.)
-- Commercial: 15/20/25/35/45ns (max.)
Low-power consumption
Battery backup operation
-- 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle
soft-error rates
Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Available in ceramic and plastic 24-pin DIP, 24-pin Thin
Dip and 24-pin SOIC and 24-pin SOJ
Military product compliant to MIL-STD-833, Class B
DESCRIPTION:
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-perfor-
mance, high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also
offers a reduced power standby mode. When
CS
goes HIGH,
the circuit will automatically go to, and remain in, a standby
power mode, as long as
CS
remains HIGH. This capability
provides significant system level power and cooling savings.
The low-power (LA) version also offers a battery backup data
retention capability where the circuit typically consumes only
1
W to 4
W operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-
compatible. Fully static asynchronous circuitry is used, requir-
ing no clocks or refreshing for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil
plastic or ceramic DIP and a 24-lead gull-wing SOIC, and a 24
-lead J-bend SOJ providing high board-level packing densi-
ties.
Military grade product is manufactured in compliance to the
latest version of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
CS
A
0
A
10
I/O
0
I/O
7
OE
WE
128 X 128
MEMORY
ARRAY
I/O CONTROL
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
GND
3089 drw 01
V
CC
1
IDT6116SA
IDT6116LA
CMOS STATIC RAM
16K (2K x 8 BIT)
5.1
2
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
Military
Unit
Terminal Voltage
V
TERM
(2)
with Respect to GND 0.5 to + 7.0 0.5 to +7.0
V
Operating
T
A
Temperature
0 to + 70
55 to +125
C
Temperature
T
BIAS
Under Bias
55 to + 125 65 to +135
C
Storage
T
STG
Temperature
55 to + 125 65 to +150
C
Power
P
T
Dissipation
1.0
1.0
W
I
OUT
DC Output Current
50
50
mA
NOTES:
3089 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V
TERM
must not exceed V
CC
+0.5V.
TRUTH TABLE
(1)
Mode
CS
CS
OE
OE
WE
WE
I/O
Standby
H
X
X
High-Z
Read
L
L
H
DATA
OUT
Read
L
H
H
High-Z
Write
L
X
L
DATA
IN
NOTE:
3089 tbl 02
1. H = V
IH
, L = V
IL
, X = Don't Care.
PIN DESCRIPTIONS
A
0
A
13
Address Inputs
I/O
0
I/O
7
Data Input/Output
CS
Chip Select
WE
Write Enable
OE
Output Enable
V
CC
Power
GND
Ground
3089 tbl 01
CAPACITANCE
(T
A
= +25
C, F = 1.0 MH
Z
)
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
I/O
I/O Capacitance
V
OUT
= 0V
8
pF
NOTE:
3089 tbl 03
1. This parameter is determined by device characterization, but is not
production tested.
DIP/SOIC/SOJ
TOP VIEW
3089 drw 02
5
6
7
8
9
10
11
12
GND
1
2
3
4
24
23
22
21
20
19
18
17
P24-2
P24-1
D24-2
D24-1
SO24-2
&
S024-4
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
V
CC
A
9
WE
A
10
I/O
5
I/O
4
OE
16
15
14
13
A
7
A
6
I/O
7
I/O
6
CS
A
8
I/O
2
I/O
3
5.1
3
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6116SA15
(2)
6116SA20
6116SA25
6116SA35
6116LA15
(2)
6116LA20
6116LA25
6116LA35
Symbol
Parameter
Power
Com'l.
Mil. Com'l. Mil. Com'l.
Mil.
Com'l.
Mil.
Unit
I
CC1
Operating Power Supply
SA
105
--
105
130
80
90
80
90
mA
Current,
CS
V
IL
,
Outputs Open,
LA
95
--
95
120
75
85
75
85
V
CC
= Max., f = 0
I
CC2
Dynamic Operating
SA
150
--
130
150
120
135
100
115
mA
Current,
CS
V
IL
,
V
CC
= Max.,
LA
140
--
120
140
110
125
95
105
Outputs Open, f = f
MAX
(4)
I
SB
Standby Power Supply
SA
40
--
40
50
40
45
25
35
mA
Current (TTL Level)
CS
V
IH
, V
CC
= Max.,
LA
35
--
35
45
35
40
25
30
Outputs Open, f = f
MAX
(4)
I
SB1
Full Standby Power
SA
2
--
2
10
2
10
2
10
mA
Supply Current
(CMOS Level),
CS
V
HC
,
LA
0.1
--
0.1
0.9
0.1
0.9
0.1
0.9
V
CC
= Max., V
IN
V
HC
or V
IN
V
LC
, f = 0
NOTES:
3089 tbl 08
1. All values are maximum guaranteed values.
2. 0
C to + 70
C temperature range only.
3. 55
C to + 125
C temperature range only.
4. f
MAX
= 1/t
RC
, only address inputs are cycling at f
MAX,
f = 0 means address inputs are not changing.
DC ELECTRICAL CHARACTERISTICS
(1)
V
CC
= 5.0V
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V
DC ELECTRICAL CHARACTERISTICS
V
CC
= 5.0V
10%
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
GND
VCC
Military
55
C to +125
C
0V
5.0V
10%
Commercial
0
C to +70
C
0V
5.0V
10%
3089 tbl 05
IDT6116SA
IDT6116LA
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
MIL.
--
10
--
5
|I
LI
|
Input Leakage Current
V
CC
= Max., V
IN
= GND to V
CC
COM'L.
--
5
--
2
A
V
CC
= Max.
MIL.
--
10
--
5
|I
LO
|
Output Leakage Current
CS
= V
IH
, V
OUT
= GND to V
CC
COM'L.
--
5
--
2
A
V
OL
Output Low Voltage
I
OL
= 8mA, V
CC
= Min.
--
0.4
--
0.4
V
V
OH
Output High Voltage
I
OH
= 4mA, V
CC
= Min.
2.4
--
2.4
--
V
3089 tbl 07
RECOMMENDED DC
OPERATING CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
(2)
V
G
ND
Supply Ground
0
0
0
V
V
IH
Input High Voltage
2.2
3.5
V
CC
+0.5
V
V
IL
Input Low Voltage
0.5
(1)
--
0.8
V
NOTES:
3089 tbl 06
1. V
IL
(min.) = 3.0V for pulse width less than 20ns, once per cycle.
2. V
IN
must not exceed V
CC
+0.5V.
5.1
4
IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
NOTES:
3089 tbl 10
1. T
A
= + 25
C
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
(LA Version Only) V
LC
= 0.2V, V
HC
= V
CC
0.2V
DC ELECTRICAL CHARACTERISTICS
(1)
(Continued)
V
CC
= 5.0V
10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V
NOTES:
3089 tbl 09
1. All values are maximum guaranteed values.
2. 0
C to + 70
C temperature range only.
3. 55
C to + 125
C temperature range only.
4. f
MAX
= 1/t
RC
, only address inouts are toggling at f
MAX
, f = 0 means address inputs are not changing.
V
CC
V
CC
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
Typ.
(1)
Max.
Symbol
Parameter
Test Conditions
Min.
2.0V
3.0V
2.0V
3.0V
Unit
V
DR
V
CC
for Data Retention
--
2.0
--
--
--
--
V
I
CCDR
Data Retention Current
MIL.
--
0.5
1.5
200
300
A
CS
V
HC
COM'L.
--
0.5
1.5
20
30
t
CDR
(3)
Data Deselect to Data
V
IN
V
HC
or
V
LC
--
0
--
--
--
ns
Retention Time
t
R
(3)
Operation Recovery Time
t
RC
(2)
--
--
--
--
ns
|I
LI
|
Input Leakage Current
--
--
--
2
2
A
6116SA45
6116SA55
(3)
6116SA70
(3)
6116SA90
(3)
6116SA120
(3)
6116SA150
(3)
6116LA45
6116LA55
(3)
6116LA70
(3)
6116LA90
(3)
6116LA120
(3)
6116LA150
(3)
Symbol
Parameter
Power
Com'l. Mil.
Com'l.
Mil.
Com'l.
Mil.
Com'l.
Mil.
Com'l.
Mil.
Com'l.
Mil.
Unit
I
CC1
Operating Power Supply
SA
80
90
--
90
--
90
--
90
--
90
--
90
mA
Current,
CS
V
IL
,
Outputs Open,
LA
75
85
--
85
--
85
--
85
--
85
--
85
V
CC
= Max., f = 0
I
CC2
Dynamic Operating
SA
100
100
--
100
--
100
--
100
--
100
--
90
mA
Current,
CS
V
IL
,
V
CC
= Max.,
LA
90
95
--
90
--
90
--
85
--
85
--
85
Outputs Open, f = f
MAX
(4)
I
SB
Standby Power Supply
SA
25
25
--
25
--
25
--
25
--
25
--
25
mA
Current (TTL Level)
CS
V
IH
, V
CC
= Max.,
LA
20
20
--
20
--
20
--
25
--
15
--
15
Outputs Open, f = f
MAX
(4)
I
SB1
Full Standby Power
SA
2
10
--
10
--
10
--
10
--
10
--
10
mA
Supply Current
(CMOS Level),
CS
V
HC
,
LA
0.1
0.9
--
0.9
--
0.9
--
0.9
--
0.9
--
0.9
V
CC
= Max., V
IN
V
HC
or V
IN
V
LC
, f = 0
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