ChipFind - документация

Электронный компонент: IDT71024S15Y

Скачать:  PDF   ZIP
FEATURES:
128K x 8 advanced high-speed CMOS static RAM
Commercial (0
to 70
C), Industrial (-40
to 85
C) and
Military (-55
to 125
C) temperature options
Equal access and cycle times
-- Military: 15/17/20/25ns
-- Industrial: 15/20ns
-- Commercial: 12/15/17/20ns
Two Chip Selects plus one Output Enable pin
Bidirectional inputs and outputs directly TTL-compatible
Low power consumption via chip deselect
Available in 300 and 400 mil Plastic SOJ, and LCC pack-
ages
Military product compliant to MIL-STD-883, Class B
Integrated Device Technology, Inc.
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
MAY 1997
1996 Integrated Device Technology, Inc.
DSC-2964/08
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION:
The IDT71024 is a 1,048,576-bit high-speed static RAM
organized as 128K x 8. It is fabricated using IDT's high-
performance, high-reliability CMOS technology. This state-
of-the-art technology, combined with innovative circuit design
techniques, provides a cost-effective solution for high-speed
memory needs.
The IDT71024 has an output enable pin which operates as
fast as 6ns, with address access times as fast as 12ns
available. All bidirectional inputs and outputs of the IDT71024
are TTL-compatible and operation is from a single 5V supply.
Fully static asynchronous circuitry is used; no clocks or
refreshes are required for operation.
The IDT71024 is packaged in 32-pin 300 mil Plastic SOJ,
32-pin 400 mil Plastic SOJ, and 32-pin 400 x 820 mil LCC
packages.
ADDRESS
DECODER
1,048,576-BIT
MEMORY ARRAY
I/O CONTROL


A
0
A
16
2964 drw 01
8
8
I/O
0
I/O
7
8


CONTROL
LOGIC
WE
OE
CS1
CS2
1
CMOS STATIC RAM
1 MEG (128K x 8-BIT)
IDT71024
2
IDT71024
CMOS STATIC RAM 1MEG (128K x 8-BIT)
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
TRUTH TABLE
(1,2)
INPUTS
WE
WE
CS1
CS1
CS2
OE
OE
I/O
FUNCTION
X
H
X
X
High-Z
DeselectedStandby (I
SB
)
X
V
HC
(3)
X
X
High-Z
DeselectedStandby (I
SB1
)
X
X
L
X
High-Z
DeselectedStandby (I
SB
)
X
X
V
LC
(3)
X
High-Z
DeselectedStandby (I
SB1
)
H
L
H
H
High-Z
Outputs Disabled
H
L
H
L
DATA
OUT
Read Data
L
L
H
X
DATA
IN
Write Data
NOTES:
2964 tbl 01
1. H = V
IH
, L = V
IL
, X = Don't care.
2. V
LC
= 0.2V, V
HC
= V
CC
-0.2V.
3. Other inputs
V
HC
or
V
LC.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Com'l, Ind'l
Mil.
Unit
V
TERM
(2)
Terminal Voltage
0.5 to +7.0
0.5 to +7.0
V
Relative to GND
T
BIAS
Temperature
55 to +125
65 to +135
C
Under Bias
T
STG
Storage
55 to +125
65 to +150
C
Temperature
P
T
Power
1.25
1.25
W
Dissipation
I
OUT
DC Output
50
50
mA
Current
NOTES:
2964 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM
must not exceed V
CC
+ 0.5V.
PIN CONFIGURATION
SOJ/LCC
TOP VIEW
5
6
7
8
9
10
11
12
NC
A
16
A
14
1
2
3
4
32
31
30
29
28
27
26
25
24
23
22
21
A
15
A
12
A
7
A
6
A
5
A
4
CS2
A
13
A
8
A
9
A
11
WE
A
10
2964 drw 02
A
3
13
20
OE
14
19
15
18
16
GND
17
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
V
CC
CS1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
SO32-2
SO32-3
L32-2
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Temperature
GND
V
CC
Commercial
0
C to +70
C
0V
5.0V
0.5V
Industrial
-40
C to +85
C
0V
5.0V
0.5V
Military
-55
C to +125
C
0V
5.0V
0.5V
2964 tbl 03
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter Min. Typ. Max.
Unit
V
CC
Supply Voltage 4.5 5.0 5.5
V
GND
Supply Voltage 0 0 0
V
V
IH
Input High Voltage 2.2 -- Vcc+0.5
V
V
IL
Input Low Voltage 0.5
(1)
-- 0.8
V
NOTE:
2964 tbl 04
1. V
IL
(min.) = 1.5V for pulse width less than 10ns, once per cycle.
DC ELECTRICAL CHARACTERISTICS
V
CC
= 5.0V
10%
IDT71024
Symbol
Parameter
Test Condition
Min. Max.
Unit
|I
LI
|
Input Leakage Current
V
CC
= Max., V
IN
= GND to V
CC
-- 5
A
|I
LO
|
Output Leakage Current
V
CC
= Max.,
CS1
= V
IH
, CS2 = V
IL
, V
OUT
= GND to V
CC
-- 5
A
V
OL
Output LOW Voltage
I
OL
= 8mA, V
CC
= Min.
-- 0.4
V
V
OH
Output HIGH Voltage
I
OH
= 4mA, V
CC
= Min.
2.4 --
V
2964 tbl 05
3
IDT71024
CMOS STATIC RAM 1MEG (128K x 8-BIT)
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(1)
(V
CC
= 5.0V
10%, V
LC
= 0.2V, V
HC
= V
CC
0.2V)
71024S15
71024S20
Symbol
Parameter
Industrial
Industrial
Unit
I
CC
Dynamic Operating Current, CS2
V
IH
and
180
160
mA
CS2
V
IH
and
CS1
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX
(2)
I
SB
Standby Power Supply Current (TTL Level)
45
45
mA
CS1
V
IH
or CS2
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX
(2)
I
SB1
Full Standby Power Supply Current
15
15
mA
(CMOS Level)
CS1
V
HC,
or CS2
V
LC
Outputs Open,
V
CC
= Max., f = 0
(2)
, V
IN
V
LC
or V
IN
V
HC
NOTES:
2964 tbl 07
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
)
;
f = 0 means no address input lines are changing.
DC ELECTRICAL CHARACTERISTICS
(1)
(V
CC
= 5.0V
10%, V
LC
= 0.2V, V
HC
= V
CC
0.2V)
71024S12
71024S15
71024S17
71024S20
71024S25
Symbol
Parameter
Com'l. Mil.
Com'l. Mil. Com'l.
Mil.
Com'l. Mil. Com'l. Mil.
Unit
I
CC
Dynamic Operating Current, CS2
V
IH
and
160
--
155
180
150
170
140
160
--
145
mA
CS2
V
IH
and
CS1
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX
(2)
I
SB
Standby Power Supply Current (TTL Level)
35
--
35
40
35
40
35
40
--
35
mA
CS1
V
IH
or CS2
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX
(2)
I
SB1
Full Standby Power Supply Current
10
--
10
15
10
15
10
15
--
15
mA
(CMOS Level)
CS1
V
HC,
or CS2
V
LC
Outputs Open,
V
CC
= Max., f = 0
(2)
, V
IN
V
LC
or V
IN
V
HC
NOTES:
2964 tbl 06
1. All values are maximum guaranteed values.
2. f
MAX
= 1/t
RC
(all address inputs are cycling at f
MAX
)
;
f = 0 means no address input lines are changing.
CAPACITANCE
(T
A
= +25
C, f = 1.0MHz, SOJ package)
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
7
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
8
pF
NOTE:
2964 tbl 08
1. This parameter is guaranteed by device characterization, but is not prod-
uction tested.
4
IDT71024
CMOS STATIC RAM 1MEG (128K x 8-BIT)
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
3ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
AC Test Load
See Figures 1 and 2
2964 tbl 09
2964 drw 03
480
255
30pF
DATA
OUT
5V
Figure 1. AC Test Load
Figure 2. AC Test Load
(for t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
OW,
and t
WHZ
)
2964 drw 04
480
255
5pF*
DATA
OUT
5V
*Including jig and scope capacitance.
5
IDT71024
CMOS STATIC RAM 1MEG (128K x 8-BIT)
MILITARY, INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
10%, All Temperature Ranges)
71024S12
(1)
71024S15
71024S17
(3)
71024S20
71024S25
(2)
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max. Min.
Max. Min.
Max.
Unit
Read Cycle
t
RC
Read Cycle Time
12
--
15
--
17
--
20
--
25
--
ns
t
AA
Address Access Time
--
12
--
15
--
17
--
20
--
25
ns
t
ACS
Chip Select Access Time
--
12
--
15
--
17
--
20
--
25
ns
t
CLZ
(4)
Chip Select to Output in Low-Z
3
--
3
--
3
--
3
--
3
--
ns
t
CHZ
(4)
Chip Deselect to Output in High-Z
0
6
0
7
0
8
0
8
0
10
ns
t
OE
Output Enable to Output Valid
--
6
--
7
--
8
--
8
--
10
ns
t
OLZ
(4)
Output Enable to Output in Low-Z
0
--
0
--
0
--
0
--
0
--
ns
t
OHZ
(4)
Output Disable to Output in High-Z
0
5
0
5
0
6
0
7
0
10
ns
t
OH
Output Hold from Address Change
4
--
4
--
4
--
4
--
4
--
ns
t
PU
(4)
Chip Select to Power-Up Time
0
--
0
--
0
--
0
--
0
--
ns
t
PD
(4)
Chip Deselect to Power-Down Time
--
12
--
15
--
17
--
20
--
25
ns
Write Cycle
t
WC
Write Cycle Time
12
--
15
--
17
--
20
--
25
--
ns
t
AW
Address Valid to End-of-Write
10
--
12
--
13
--
15
--
15
--
ns
t
CW
Chip Select to End-of-Write
10
--
12
--
13
--
15
--
15
--
ns
t
AS
Address Set-up Time
0
--
0
--
0
--
0
--
0
--
ns
t
WP
Write Pulse Width
10
--
12
--
13
--
15
--
15
--
ns
t
WR
Write Recovery Time
0
--
0
--
0
--
0
--
0
--
ns
t
DW
Data Valid to End-of-Write
7
--
8
--
9
--
9
--
10
--
ns
t
DH
Data Hold Time
0
--
0
--
0
--
0
--
0
--
ns
t
OW
(4)
Output Active from End-of-Write
3
--
3
--
3
--
4
--
4
--
ns
t
WHZ
(4)
Write Enable to Output in High-Z
0
5
0
5
0
7
0
8
0
9
ns
NOTES:
2964 tbl 010
1. 0
C to +70
C temperature range only.
2. 55
C to +125
C temperature range only.
3. 0
C to +70
C and 55
C to +125
C temperature ranges only.
4. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.