MILITARY AND COMMERCIAL TEMPERATURE RANGES
DECEMBER 1995
1996 Integrated Device Technology, Inc.
DSC-2819/4
7.03
1
DESCRIPTION
The IDT7M1014 is a 4K x 36 asynchronous high-speed
BiCMOS Dual-Port static RAM module constructed on a co-
fired ceramic substrate using 4 IDT7014 (4K x 9) asynchro-
nous Dual-Port RAMs. The IDT7M1014 module is designed
to be used as stand-alone 36-bit dual-port RAM.
This module provides two independent ports with separate
control, address, and I/O pins that permit independent and
asynchronous access for reads or writes to any location in
memory.
The IDT7M1014 module is packaged in a 142-lead ceramic
PGA (Pin Grid Array). Maximum access times as fast as 15ns
and 25ns are available over the commercial and military
temperature ranges respectively.
All IDT military modules are constructed with semiconduc-
tor components manufactured in compliance with the latest
revision of MIL-STD-883, Class B making them ideally suited
to applications demanding the highest level of performance
and reliability.
FEATURES
High-density 4K x 36 BiCMOS Dual-Port Static RAM
module
Fast access times
-- Commercial: 15, 20ns
-- Military: 25, 30ns
Fully asynchronous read/write operation from either port
Surface mounted LCC packages allow through-hole
module to fit on a ceramic PGA footprint
Single 5V (
10%) power supply
Multiple GND pins and decoupling capacitors for maxi-
mum noise immunity
Inputs/outputs directly TTL-compatible
IDT7M1014
4K x 36
BiCMOS DUAL-PORT
STATIC RAM MODULE
FUNCTIONAL BLOCK DIAGRAM
IDT7014
4K x 9
IDT7014
4K x 9
IDT7014
4K x 9
IDT7014
4K x 9
R_A
0 11
R_I/O
0 8
R_I/O
9 17
R_I/O
18 26
R_I/O
27 35
L_I/O
0 8
L_I/O
9 17
L_I/O
18 26
L_I/O
27 35
L_A
0 11
2819 drw 01
L_R/
W
0
L_R/
W
1
L_R/
W
2
L_R/
W
3
R_
OE
L
R_R/
W
0
R_R/
W
2
R_R/
W
3
R_R/
W
1
R_
OE
H
L_
OE
L
L_
OE
H
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
Integrated Device Technology, Inc.
7.03
2
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
1
2
3
4
5
6
7
8
9
10
11
12
13
A
GND
L_I/O
3
L_I/O
2
GND
L_I/O
1
L_I/O
0
GND
R_I/O
0
R_I/O
1
GND
R_I/O
2
R_I/O
3
GND
B
L_I/O
4
L_I/O
5
L_I/O
6
L_A
2
L_A
1
L_A
0
N.C.
R_A
0
R_A
1
R_A
2
R_I/O
6
R_I/O
5
R_I/O
4
C
L_I/O
8
V
CC
L_I/O
7
GND
N.C.
N.C.
N.C.
N.C.
N.C.
GND
R_I/O
7
V
CC
R_I/O
8
D
L_I/O
9
L_I/O
10
L_I/O
11
L_A
3
GND
GND
R_A
3
R_A
4
R_I/O
11
R_I/O
10
R_I/O
9
E
L_I/O
12
N.C.
N.C.
L_A
4
R_A
5
N.C.
N.C.
R_I/O
12
F
L_I/O
13
L_
OE
L
L_
OE
H
L_A5
R_A
6
R_
OE
H
R_
OE
L
R_I/O
13
G
GND
L_R/
W
0
L_R/
W
1
GND
GND
R_R/
W
1
R_R/
W
0
GND
H
L_I/O
14
L_R/
W
2
L_R/
W
3
L_A
6
R_A
7
R_R/
W
3
R_R/
W
2
R_I/O
14
J
L_I/O
15
L_I/O
16
L_I/O
17
L_A
7
R_A
8
R_I/O
17
R_I/O
16
R_I/O
15
K
L_I/O
20
L_I/O
19
L_I/O
18
GND
L_A
10
L_A
11
GND
R_A
11
R_A
10
GND
R_I/O
18
R_I/O
19
R_I/O
20
L
L_I/O
21
V
CC
L_I/O
22
L_A
8
L_A
9
L_I/O
31
R_I/O
35
R_I/O
34
R_I/O
30
R_A
9
R_I/O
22
V
CC
R_I/O
21
M
L_I/O
23
L_I/O
24
L_I/O
25
L_I/O
29
L_I/O
30
L_I/O
32
L_I/O
35
R_I/O
33
R_I/O
31
R_I/O
29
R_I/O
25
R_I/O
24
R_I/O
23
N
GND
L_I/O
26
L_I/O
27
L_I/O
28
GND
L_I/O
33
L_I/O
34
R_I/O
32
GND
R_I/O
28
R_I/O
27
R_I/O
26
GND
2809 drw 02
PIN NAMES
Left Port
Right Port
Names
L_R/
W
0-3
R_R/
W
0-3
Byte Read/Write Enables
L_
OE
L, H
R_
OE
L, H
Word Output Enables
L_A
0-11
R_A
0-11
Address Inputs
L_I/O
0-35
R_I/O
0-35
Data Input/Outputs
V
CC
Power
GND
Ground
2819 tbl 01
PIN CONFIGURATION
2819 drw 02
7.03
3
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
Military
Unit
V
TERM
(2)
Terminal Voltage
0.5 to +7.0
0.5 to +7.0
V
with Respect to
GND
V
TERM
(3)
Terminal Voltage
0.5 to +7.0
0.5 to +7.0
V
T
A
Operating
0 to +70
55 to +125
C
Temperature
T
BIAS
Temperature
10 to +85
65 to +135
C
Under Bias
T
STG
Storage
55 to +125
65 to +150
C
Temperature
I
OUT
DC Output
50
50
mA
Current
NOTES:
2819 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. Inputs and V
CC
terminals only.
3. I/O terminals only.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Grade
Temperature
GND
V
CC
Military
55
C to +125
C
0V
5.0V
10%
Commercial
0
C to +70
C
0V
5.0V
10%
2819 tbl 04
RECOMMENDED DC
OPERATING CONDITIONS
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Supply Voltage
0
0
0
V
V
IH
Input HIGH Voltage
2.2
--
6.0
V
V
IL
Input LOW Voltage
0.5
(1)
--
0.8
V
NOTE:
2819 tbl 03
1. V
IL
3.0V for pulse width less than 20ns.
CAPACITANCE TABLE
(T
A
= +25
C, f = 1.0MHz)
Symbol
Parameter
Conditions
Max.
Unit
C_
IN
(1)
Input Capacitance (Address)
V_
IN
= 0V
50
pF
C_
IN
(2)
Input Capacitance (Data, R/
W
)
V_
IN
= 0V
15
pF
C_
IN
(3)
Input Capacitance (
OE
)
V_
IN
= 0V
25
pF
C
OUT
Output Capacitance (Data)
V_
OUT
= 0V
15
pF
NOTE:
2819 tbl 05
1. This parameter is guaranteed by design but not tested.
7.03
4
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
10%, T
A
= 55
C to +125
C or 0
C to +70
C)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
|I
LI
|
Input Leakage
V
CC
= Max.
--
40
A
V
IN
= GND to V
CC
|I
LO
|
Output Leakage
V
CC
= Max.
--
10
A
OE
V
IH
, V
OUT
= GND to V
CC
V
OL
Output LOW Voltage
V
CC
= Min. I
OL
= 4mA
--
0.4
V
V
OH
Output HIGH Voltage
V
CC
= Min. I
OH
= -4mA
2.4
--
V
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
10%, T
A
= 55
C to +125
C or 0
C to +70
C)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
CC
Operating Current
V
CC
= Max.,
--
1040
mA
Outputs Open, f = f
MAX
(1)
NOTE:
1. At f=f
MAX
, address and data inputs (except
OE
) are cycling at the maximum frequency of read cycle of 1/tRC, and using "AC TEST CONDITIONS" of
input levels of GND to 3V.
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
3ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Output Load
See Figures 1-3
2819 tbl 08
2819 ttbl 06
2819 tbl 07
Figure 3. Alternate Lumped Capacitive Load,
Typical Derating
+5 V
5 pF*
DATA
OUT
480
255
2819 drw 03
*Including scope and jig.
Figure 1. Output Load
(For tCHZ, tCLZ, tOHZ, tOLZ, tWHZ, tOW)
1
2
3
4
5
6
7
8
20
40
60
80
100
120 140
160 180
200
TAA
(Typical, ns)
CAPACITANCE (pF)
2819 drw 04b
Figure 2. Alternate Output Load
2819 drw 04a
50
DATA
OUT
1.5V
Zo = 50
7.03
5
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5V
10%, T
A
= 55
C to +125
C or 0
C to +70
C)
7M1014SxxG
7M1014SxxGB
-15
-20
-25
-30
Symbol Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle
t
RC
Read Cycle Time
15
--
20
--
25
--
30
--
ns
t
AA
Address Access Time
--
15
--
20
--
25
--
30
ns
t
OE
Output Enable Access Time
--
8
--
10
--
12
--
15
ns
t
OH
Output Hold from Address Change
3
--
3
--
3
--
3
--
ns
t
OLZ
(1)
Output Enable to Output in Low-Z
0
--
0
--
0
--
0
--
ns
t
OHZ
(1)
Output Disable to Output in Hi-Z
--
7
--
9
--
11
--
13
ns
Write Cycle
t
WC
Write Cycle Time
15
--
20
--
25
--
30
--
ns
t
AW
Address Valid to End of Write
14
--
15
--
20
--
25
--
ns
t
AS
Address Set-Up Time
0
--
0
--
0
--
0
--
ns
t
WP
Write Pulse Width
12
--
15
--
20
--
25
--
ns
t
WR
Write Recovery Time
1
--
2
--
2
--
2
--
ns
t
DW
Data Valid to End of Write
10
--
12
--
15
--
20
--
ns
t
DH
Data Hold Time
0
--
0
--
0
--
0
--
ns
t
WHZ
(1)
Write Enable to Output in Hi-Z
--
7
--
9
--
11
--
13
ns
t
OW
(1)
Output Active from End of Write
0
--
0
--
0
--
0
--
ns
t
WDD
Write Pulse to Data Delay
--
30
--
40
--
45
--
50
ns
t
DDD
(1)
Write Data Valid to Read Data Delay
--
25
--
30
--
35
--
40
ns
NOTES:
2819 tbl 09
1. This parameter is guaranteed by design but not tested.
2. Port-to-Port delay through the RAM cells from the writing port to the reading port.
NOTES:
1. R/
W
is HIGH for Read Cycles.
2.
OE
V
IL.
TIMING WAVEFORM OF READ CYCLE NO. 1 (EITHER SIDE)
(1,2)
2819 drw 05
t
AA
t
OH
t
RC
ADDRESS
DATA
OUT
t
OH
7.03
6
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF READ CYCLE NO. 2 (EITHER SIDE)
(1, 2)
2819 drw 07
R/W
R
VALID
t
WC
MATCH
VALID
MATCH
t
WP
t
DW
t
WDD
t
DDD
ADDR
R
DATA
IN R
DATA
OUT L
ADDR
L
(1)
NOTES:
1. R/
W
is HIGH for Read Cycles.
2. Adress valid prior to
OE
transition LOW.
3. This parameter is guaranteed by design but not tested.
TIMING WAVEFORM OF READ WITH PORT-TO-PORT DELAY
2819 drw 06
OE
DATA VALID
t
OE
t
OLZ
t
OHZ (3)
DATA
OUT
(3)
7.03
7
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF WRITE CYCLE (EITHER SIDE)
(1,2)
NOTES:
1. R/
W
is HIGH during all address transitions.
2. If
OE
is LOW during the write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn
off and data to be placed on the bus for the required t
DW
. If
OE
is HIGH, this requirement does not apply, and the write pulse
can be as short as the specified t
WP
.
3. This parameter is guaranteed by design but not tested.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
2819 drw 08
DATA
OUT
t
AW
t
DW
DATA
IN
R/
W
OE
ADDRESS
t
WC
t
DH
t
OHZ
t
AS
t
WP
t
WR
t
WHZ
t
OW
(4)
(4)
DATA VALID
(3)
7.03
8
IDT7M1014 4K x 36 BiCMOS
DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PACKAGE DIMENSIONS
TOP VIEW
BOTTOM VIEW
1.327
1.353
1.327
1.353
SIDE VIEW
0.045
0.055
0.015
0.021
0.195 MAX
0.125
0.135
0.050 TYP
0.100 TYP
PIN A1
Speed in Nanoseconds
ORDERING INFORMATION
2819 drw 10
2819 drw 10
IDT
XXXX
A
999
A
A
Device
Power
Speed
Package
Process/
Type
Temperature
Range
BLANK
Commercial (0
C to +70
C)
B
Military (55
C to +125
C) Semiconductor
Components compliant to MIL-STD883, Class B
G
Ceramic PGA (Pin Grid Array)
15
(Commercial Only)
20
(Commercial Only)
25
(Military Only)
30
(Military Only)
S
Standard Power
7M1014
4K x 36 BiCMOS Dual-Port static RAM Module
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