71
IMP, Inc.
Process C1227
HV BiCMOS 1.2
m
30V Double Metal - Double Poly
Electrical Characteristics
T=25
o
C Unless otherwise noted
ISO 9001 Registered
Symbol
Minimum
Typical
Maximum
Unit
Comments
N-Channel High Voltage Transistor
Threshold Voltage
HVT
N
0.7
0.9
1.1
V
Punch Through Voltage
HVBVDSS
P
36
V
ON Resistance
HVPR
0N
1.4
m
-
@V
GS
= 5V
cm
2
V
DS
= 0.1V
Operating Voltage
V
GS
= 5V
V
V
DS
= 30V
N-Channel Low Voltage Transistor
Threshold Voltage
VT
N
0.4
0.6
0.8
V
100x1.4
m
Body Factor
N
0.50
0.65
0.80
V
1/2
100x1.4
m
Conduction Factor
N
64.0
75.0
86.0
A/V
2
100x100
m
Effective Channel Length
Leff
N
1.20
1.35
1.50
m
100x1.4
m
Width Encroachment
W
N
0.45
m
Per side
Punch Through Voltage
BVDSS
N
8
V
Poly Field Threshold Voltage
VTFP
N
10
18
V
Vertical NPN Transistor
Symbol
Minimum
Typical
Maximum
Unit
Comments
Beta
h
FE
50
140
240
4.5x4.5
m
Early Voltage
V
A
34
V
Cut-Off Frequency
f
1.89
GHz
Capacitance
Symbol
Minimum
Typical
Maximum
Unit
Comments
Gate Oxide
C
OX
1.338
1.439
1.569
fF/
m
2
Metal-1 to Poly1
C
M1P
0.040
0.046
0.052
fF/
m
2
Metal-2 to Metal-1
C
MM
0.043
0.050
0.057
fF/
m
2
Symbol
Minimum
Typical
Maximum
Unit
Comments
P-Channel High Voltage Transistor
Threshold Voltage
HVT
P
0.7
0.9
1.1
V
Punch Through Voltage
HVBVDSS
P
36
V
ON Resistance
HVPR
0N
11.0
m
-
@V
GS
= 5V
cm
2
@V
DS
= 0.1V
P-Channel Low Voltage Transistor
Threshold Voltage
VT
P
0.8
0.6
0.4
V
100x1.4
m
Body Factor
P
0.35
0.50
0.65
V
1/2
100x1.4
m
Conduction Factor
P
20.0
25.0
30.0
A/V
2
100x100
m
Effective Channel Length
Leff
P
1.35
1.50
1.65
m
100x1.4
m
Width Encroachment
W
P
0.40
m
Per side
Punch Through Voltage
BVDSS
P
8
V
Poly Field Threshold Voltage
VTF
P(P)
10
18
V
72
C1227-4-98
Diffusion & Thin Films
Symbol
Minimum
Typical
Maximum
Unit
Comments
Starting Material p<100>
Well(field)Sheet Resistance
N-well(f)
1.5
2.1
2.7
K
/
n-well
N+ Sheet Resistance
N+
20.0
35.0
50.0
/
N+ Junction Depth
x
jN+
0.4
m
P+ Sheet Resistance
P+
50.0
75.0
100.0
/
P+ Junction Depth
x
jP+
0.4
m
Base Resistance
RSHB_RB
1.33
1.66
2.00
K
/sq
High-Voltage Gate Oxide
HT
GOX
22
nm
Gate Oxide Thickness
T
GOX
22
nm
Interpoly Oxide Thickness
IP
OX
33.6
42
50.4
nm
Gate Poly Sheet Resistance
POLY1
15.0
22.0
30.0
/
Poly2 Resistivity
RSH_PL P
1.5
2
2.5
k
/
Metal-1 Sheet Resistance
M1
35.0
45.0
65.0
m
/
Metal-2 Sheet Resistance
M2
19.0
25.0
35.0
m
/
Passivation Thickness
T
PASS
200+900
nm
oxide+nitride
Min Channel Width
4.0
m
Diffusion Overlap of Contact
1.0
m
Min Spacing, Active Region, 5V
2.0
m
Poly Overlap of Contact
1.0
m
Poly1 Width/Space
1.4/2.0
m
Metal-1 Overlap of Contact
1.5
m
Poly2 Width/Space
3.0/2.0
m
Contact to Poly Space
1.5
m
Contact Width/Space
1.4x1.4
m
Minimum Pad Opening
65x65
m
Via Width/Space
1.4/1.6
m
Metal-1 Overlap of Via
1.0
m
Metal-1 Width/Space
2.6/1.6
m
Metal-2 Overlap of Via
1.0
m
Metal-2 Width/Space
2.6/1.6
m
Minimum Pad Opening
65x65
m
Gate Poly Width/Space
1.5/2.0
m
Minimum Pad to Pad Spacing
5.0
m
N+/P+ Width/Space
2.5/2.0
m
Minimum Pad Pitch
80
m
Layout Rules
Physical Characteristics
Process C1227
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