2001 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA

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March 27, 2000-00

DESCRIPTION

This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.

These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 V

RMS

Isolation Test Voltage. This isolation performance

is accomplished through Infineon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)

on the phototransistor substrate. These isolation pro-

cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.

The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.

.010 (.25)

typ.

.114 (2.90)

.130 (3.0)

.130 (3.30)
.150 (3.81)

.031 (0.80) min.

.300 (7.62)

typ.

.031 (0.80)
.035 (0.90)

.100 (2.54) typ.

.039

(1.00)

Min.

.018 (0.45)
.022 (0.55)

.048 (0.45)
.022 (0.55)

.248 (6.30)
.256 (6.50)

.335 (8.50)
.343 (8.70)

pin one ID

°9°

.300.347

(7.628.81)

typ.

Base

Collector

Emitter

Anode

Cathode

Dimensions in Inches (mm)

DEVICE TYPES

Part No.

CTR % Min.

Part No.

CTR % Min.

4N25

MCT2

4N26

MCT2E

4N27

MCT270

4N28

MCT271

4590

4N35

100

MCT272

75150

4N36

100

MCT273

125250

4N37

100

MCT274

225400

4N38

MCT275

7090

H11A1

MCT276

1560

H11A2

MCT277

100

H11A3

H11A4

H11A5

FEATURES
· Interfaces with Common Logic Families
· Input-output Coupling Capacitance < 0.5 pF
· Industry Standard Dual-in-line 6-pin Package
· Field Effect Stable by TRIOS

· 5300 V

RMS

Isolation Test Voltage

· Underwriters Laboratory File #E52744
·

VDE #0884 Approval Available with Option 1

APPLICATIONS
· AC Mains Detection
· Reed Relay Driving
· Switch Mode Power Supply Feedback
· Telephone Ring Detection
· Logic Ground Isolation
· Logic Coupling with High Frequency Noise

Rejection

Notes:

Designing with data sheet is covered in Application Note 45.

D E

PHOTOTRANSISTOR

Industry Sta ndard

Single Channel

6 Pin DIP Optocoupler

2001 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA

Phototransistor, Industry Standard

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March 27, 2000-00

Maximum Ratings

=25

Emitter

Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t

s)............................................................................... 2.5 A

Power Dissipation................................................................................... 100 mW

Detector

Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW

Package

Isolation Test Voltage.......................................................................... 5300 V

RMS

Creepage ..............................................................................................

7.0 mm

Clearance .............................................................................................

7.0 mm

Isolation Thickness between Emitter and Detector ...............................

0.4 mm

Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance

=500 V,

=25

C...............................................................................10

=500 V,

=100

C............................................................................ 10

Storage Temperature................................................................ 55

C to +150

Operating Temperature ............................................................ 55

C to +100

Junction Temperature................................................................................ 100

Soldering Temperature (max. 10 s, dip soldering:

distance to seating plane

1.5 mm) ...................................................... 260

4N25/26/27/28--Characteristics

=25

* Indicates JEDEC registered values

Emitter

Symbol

Min.

Typ.

Max.

Unit

Condition

Forward Voltage*

1.3

1.5

=50 mA

Reverse Current*

0.1

100

=3.0 V

Capacitance

Detector

Breakdown Voltage*

Collector-Emitter

CEO

=1.0 mA

Emitter-Collector

ECO

7.0

=100

Collector-Base

CBO

=100

CEO

(dark)*

4N25/26/27
4N28

5.0
10

50
100

=10 V, (base open)

CBO

(dark)*

2.0

=10 V, (emitter open)

Capacitance, Collector-Emitter

6.0

Package

DC Current Transfer Ratio*

4N25/26

CTR

=10 V,

=10 mA

4N27/28

Isolation Voltage*

4N25

2500

Peak, 60 Hz

4N26/27

1500

4N28

500

Saturation Voltage, Collector-Emitter

CE(sat)

0.5

=2.0 mA,

=50 mA

Resistance, Input to Output*

100

=500 V

Coupling Capacitance

0.5

f=1.0 MHz

Rise and Fall Times

2.0

=10 mA

=10 V,

=100

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4N35/36/37/38--Characteristics

=25

* Indicates JEDEC registered value

H11A1 through H11A5--Characteristics

=25

Emitter

Symbol

Min.

Typ.

Max.

Unit

Condition

Forward Voltage*

0.9

1.3

1.5
1.7

=10 mA

=10 mA,

=55

Reverse Current*

0.1

=6.0 V

Capacitance

=0, f=1.0 MHz

Detector

Breakdown Voltage, Collector-Emitter*

4N35/36/37

CEO

=1.0 mA

4N38

Breakdown Voltage, Emitter-Collector*

ECO

7.0

=100

Breakdown Voltage, Collector-Base*

4N35/36/37

CBO

=100

A, I

=1.0

4N38

Leakage Current, Collector-Emitter*

4N35/36/37

CEO

5.0

=10 V, I

4N38

=60 V, I

Leakage Current, Collector-Emitter*

4N35/36/37

CEO

500

µA

=30 V, I

=0, T

=100

4N38

6.0

=60 V, I

=0, T

=100

Capacitance, Collector-Emitter

6.0

Package

DC Current Transfer Ratio*

4N35/36/37

CTR

100

=10 V, I

=10 mA,

4N38

=1.0 V, I

=20 mA

DC Current Transfer Ratio*

4N35/36/37

CTR

=10 V,

=10 mA,

=55 to 100

4N38

Resistance, Input to Output*

=500 V

Coupling Capacitance

0.5

f=1.0 MHz

Switching Time*

OFF

µs

=2.0 mA, R

=100

, V

=10 V

Emitter

Symbol

Min.

Typ.

Max.

Unit

Condition

Forward Voltage

H11A1H11A4

1.1

1.5

=10 mA

H11A5

1.1

1.7

Reverse Current

=3.0 V

Capacitance

=0, f=1.0 MHz

Detector

Breakdown Voltage, Collector-Emitter

CEO

=1.0 mA,

=0 mA

Breakdown Voltage, Emitter-Collector

ECO

7.0

=100

=0 mA

Breakdown Voltage, Collector-Base

CBO

=10

=0 mA

Leakage Current, Collector-Emitter

CEO

5.0

=10 V,

=0 mA

Capacitance, Collector-Emitter

6.0

Package

DC Current Transfer Ratio

H11A1

CTR

=10 V,

=10 mA

H11A2/3

H11A4

H11A5

Saturation Voltage, Collector-Emitter

sat

0.4

=0.5 mA,

=10 mA

Capacitance, Input to Output

0.5

Switching Time

OFF

3.0

µs

=2.0 mA, R

=100

, V

=10 V

2001 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA

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March 27, 2000-00

MCT2/MCT2E--Characteristics T

=25

°C

MCT270 through MCT277--Characteristics T

=25

°C

Emitter

Symbol

Min.

Typ.

Max.

Unit

Condition

Forward Voltage

1.1

1.5

=20 mA

Reverse Current

=3.0 V

Capacitance

=0, f=1.0 MHz

Detector

Breakdown Voltage

Collector-Emitter

CEO

=1.0 mA,

=0 mA

Emitter-Collector

ECO

7.0

=100

=0 mA

Collector-Base

CBO

=10

=0 mA

Leakage Current

Collector-Emitter

CBO

5.0

=10 V,

Collector-Base

CBO

Capacitance, Collector-Emitter

Package

DC Current Transfer Ratio

CTR

=10 V,

=10 mA

Capacitance, Input to Output

0.5

Resistance, Input to Output

100

Switching Time

OFF

3.0

µs

=2.0 mA, R

=100

, V

=10 V

Emitter

Symbol

Min.

Typ.

Max.

Unit

Condition

Forward Voltage

1.5

=20 mA

Reverse Current

=3.0 V

Capacitance

=0, f=1.0 MHz

Detector

Breakdown Voltage

Collector-Emitter

CEO

=10

=0 mA

Emitter-Collector

ECO

7.0

=10

=0 mA

Collector-Base

CBO

=10

=0 mA

Leakage Current, Collector-Emitter

CEO

=10 V,

=0 mA

Package

DC Current Transfer Ratio

MCT270

CTR

=10 V, I

=10 mA

MCT271

MCT272

150

MCT273

125

250

MCT274

225

400

MCT275

210

MCT276

MCT277

100

Current Transfer Ratio, CollectorEmitter

MCT271276

CTR

12.5

=0.4 V, I

=16 mA

MCT277

CollectorEmitter Saturation Voltage

sat

0.4

=2.0 mA, I

=16 mA

Capacitance, Input to Output

0.5

Resistance, Input to Output

=500 VDC

Switching Time

MCT270/272

, t

OFF

µs

=2.0 mA,

=100

=5.0 V

MCT271

7.0

MCT273

MCT274

MCT275/277

MCT276

3.5

2001 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA

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March 27, 2000-00

Figure 1. Forward Voltage vs. Forward Current

Figure 2. Normalized Non-saturated and Saturated
CTR, T

=25

°C vs. LED Current

Figure 3. Normalized Non-saturated and Saturated
CTR, T

=50

°C vs. LED Current

100

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

- Forward Current - mA

- Forward Voltage - V

= 55

°C

= 25

°C

= 85

°C

Normalized to:

0.0

0.5

1.0

1.5

1 10 100

- LED Current - mA

NCTR

NCTR(SAT)

NCTR - Normlized CTR

CTRce(sat) Vce=0.4 V

Vce=10 V, I

=10 mA, T

=25

°C

=25

°C

100

0.0

0.5

1.0

1.5

- LED Current - mA

NCTR - Normalized CTR

Normalized to:

CTRce(sat) Vce=0.4 V

Vce=10 V, I

=10 mA, T

=25

°C

NCTR

NCTR(SAT)

=50

°C

Figure 4. Normalized Non-saturated and Saturated
CTR, T

=70

°C vs. LED Current

Figure 5. Normalized Non-saturated and Saturated
CTR, T

=85

°C vs. LED Current

Figure 6. Collector-emitter Current vs. Temperature
and LED Current

100

0.0

0.5

1.0

1.5

- LED Current - mA

NCTR - Normalized CTR

Normalized to:

CTRce(sat) Vce=0.4 V

Vce=10 V, I

=10 mA, T

=25

°C

NCTR

NCTR(SAT)

=70

°C

100

0.0

0.5

1.0

1.5

- LED Current - mA

NCTR - Normalized CTR

Normalized to:

CTRce(sat) Vce = 0.4 V

Vce=10 V, I

=10 mA, T

=25

°C

NCTR

NCTR(SAT)

=85

°C

- LED Current - mA

Ice - Collector Current - mA

°C

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 4N35

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: 4N35