2002-08-26
Page 1
Preliminary data
BSA 223SP
OptiMOS
-P Small-Signal-Transistor
Product Summary
V
DS
-20
V
R
DS(on)
1.2
I
D
-0.39
A
Feature
P-Channel
Enhancement mode
Super Logic Level (2.5 V rated)
150C operating temperature
Avalanche rated
dv/dt rated
SC-75
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
BPs
Type
Package
Ordering Code
BSA 223SP
SC-75
Q67042-S4176
Maximum Ratings, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25C
T
A
=70C
I
D
-0.39
-0.31
A
Pulsed drain current
T
A
=25C
I
D puls
-1.56
Avalanche energy, single pulse
I
D
=-0.39 A , V
DD
=-10V, R
GS
=25
E
AS
1.4
mJ
Reverse diode dv/dt
I
S
=-0.39A, V
DS
=-16V, di/dt=200A/s, T
jmax
=150C
dv/dt
-6
kV/s
Gate source voltage
V
GS
12
V
Power dissipation
T
A
=25C
P
tot
0.25
W
Operating and storage temperature
T
j ,
T
stg
-55... +150
C
IEC climatic category; DIN IEC 68-1
55/150/56
2002-08-26
Page 2
Preliminary data
BSA 223SP
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - soldering point
R
thJS
-
-
150
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
500
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0, I
D
=-250A
V
(BR)DSS
-20
-
-
V
Gate threshold voltage, V
GS
= V
DS
I
D
=-1.5A
V
GS(th)
-0.6
-0.9
-1.2
Zero gate voltage drain current
V
DS
=-20V, V
GS
=0, T
j
=25C
V
DS
=-20V, V
GS
=0, T
j
=150C
I
DSS
-
-
-0.1
-10
-1
-100
A
Gate-source leakage current
V
GS
=-12V, V
DS
=0
I
GSS
-
-10
-100 nA
Drain-source on-state resistance
V
GS
=-2.5V, I
D
=-0.29A
R
DS(on)
-
1.27
2.1
Drain-source on-state resistance
V
GS
=-4.5, I
D
=-0.39A
R
DS(on)
-
0.7
1.2
2002-08-26
Page 3
Preliminary data
BSA 223SP
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
2*
I
D
*R
DS(on)max
,
I
D
=-0.31A
0.35
0.7
-
S
Input capacitance
C
iss
V
GS
=0, V
DS
=-15V,
f=1MHz
-
45
56
pF
Output capacitance
C
oss
-
21
26
Reverse transfer capacitance
C
rss
-
17
22
Turn-on delay time
t
d(on)
V
DD
=-10V, V
GS
=-4.5V,
I
D
=-0.39A, R
G
=6
-
3.8
5.7
ns
Rise time
t
r
-
5
7.5
Turn-off delay time
t
d(off)
-
5.1
7.6
Fall time
t
f
-
3.2
4.8
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-10V, I
D
=-0.39A
-
-0.04
-0.05 nC
Gate to drain charge
Q
gd
-
-0.4
-0.5
Gate charge total
Q
g
V
DD
=-10V, I
D
=-0.39A,
V
GS
=0 to -4.5V
-
-0.5
-0.62
Gate plateau voltage
V
(plateau) V
DD
=-10V, I
D
=-0.39A
-
-2.2
-2.7
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25C
-
-
-0.39 A
Inv. diode direct current, pulsed I
SM
-
-
-1.56
Inverse diode forward voltage
V
SD
V
GS
=0, I
F
=-0.39
-
-1
-1.33 V
Reverse recovery time
t
rr
V
R
=-10V, |I
F
|
=
|l
D
|,
di
F
/dt=100A/s
-
7.6
9.5
ns
Reverse recovery charge
Q
rr
-
1.1
1.4
nC
2002-08-26
Page 4
Preliminary data
BSA 223SP
1 Power dissipation
P
tot
= f (T
A
)
0
20
40
60
80
100
120
C
160
T
A
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
W
0.55
BSA 223SP
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: |V
GS
|
4.5 V
0
20
40
60
80
100
120
C
160
T
A
0
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
-0.36
A
-0.42
BSA 223SP
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
A
BSA 223SP
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
t
p = 180.0s
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSA 223SP
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2002-08-26
Page 5
Preliminary data
BSA 223SP
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: Tj =25C
0
0.3
0.6
0.9
V
1.5
-V
DS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-
I
D
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
, Tj = 25 C
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-I
D
0
0.5
1
1.5
2
2.5
3
4
R
DS(on)
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|
2 x |I
D
| x R
DS(on)max
parameter: T
j
= 25 C
0
0.5
1
1.5
2
V
3
-V
GS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: Tj = 25 C
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-I
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
S
1.1
g
fs
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