BAL99
Jul-27-2001
1
Silicon Switching Diode
For high-speed switching applications
1
2
3
VPS05161
EHA00002
3
2
Type
Marking
Pin Configuration
Package
BAL99
JFs
1 = n.c.
2 = C
3 = A
SOT23
Maximum Ratings
Parameter
Symbol
Unit
Value
Diode reverse voltage
V
R
V
70
Peak reverse voltage
V
RM
70
250
mA
Forward current
I
F
Surge forward current, t = 1
s
I
FS
A
4.5
Total power dissipation
, T
S
= 54 C
P
tot
mW
370
150
T
j
C
Junction temperature
Storage temperature
T
stg
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
260
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAL99
Jul-27-2001
2
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Breakdown voltage
I
(BR)
= 100 A
V
(BR)
-
-
-
V
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
F
-
-
-
-
-
-
-
-
715
855
1000
1250
mV
Reverse current
V
R
= 70 V
I
R
-
-
2.5
A
Reverse current
V
R
= 25 V, T
A
= 150 C
V
R
= 70 V
I
R
-
-
-
-
30
50
AC characteristics
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
D
-
-
1.5
pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, R
L
= 100
,
measured at I
R
= 1mA
t
rr
-
-
6
ns
Test circuit for reverse recovery time
EHN00014
Oscillograph
F
D.U.T.
Pulse generator: t
p
= 100ns, D = 0.05,
t
r
= 0.6ns, R
i
= 50
Oscillograph: R = 50
, t
r
= 0.35ns,
C
1pF
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