Feb-04-2003
1
BAR66...
Silicon PIN Diode Array
Surge protection device
Designed for surge overvoltage clamping
in antiparallel connection
BAR66
3
1
D 2
2
D 1
Type
Package
Configuration
L
S
(nH)
Marking
BAR66
SOT23
series
1.8
PMs
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
150
V
Forward current
I
F
200
mA
Total power dissipation
T
s
25 C
P
tot
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
, BAR66
R
thJS
290
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Feb-04-2003
2
BAR66...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 5 A
V
(BR)
150
-
-
V
Reverse current
V
R
= 100 V
I
R
-
-
20
nA
Forward voltage
I
F
= 50 mA
V
F
-
0.95
1.2
V
AC Characteristics
Diode capacitance
V
R
= 35 V, f = 1 MHz
V
R
= 0 V, f = 100 MHz
C
T
-
-
0.4
0.35
0.6
0.9
pF
Zero bias conductance
V
R
= 0 V, f = 100 MHz
g
P
-
220
-
s
Forward resistance
I
F
= 5 mA, f = 100 MHz
r
f
-
1.5
1.8
Charge carrier life time
I
F
= 10 mA, I
R
= 6 mA, measured at I
R
= 3 mA,
R
L
= 100
rr
-
0.7
-
s
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