Jan-16-2004
1
BAS40.../BAS140W
Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
BAS140W
BAS40-02L
BAS40-06
BAS40-06W
BAS40
BAS40-05
BAS40-05W
BAS40-04
1
2
3
1
D 2
2
D 1
3
1
D 2
2
D 1
3
1
2
3
1
D 2
2
D 1
BAS40-07
BAS40-07W
1
D 2
2
3
4
D 1
ESD
: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Configuration
L
S
(nH)
Marking
BAS140W
BAS40
BAS40-02L*
BAS40-04
BAS40-05
BAS40-05W
BAS40-06
BAS40-06W
BAS40-07
BAS40-07W
SOD323
SOT23
TSLP-2-1
SOT23
SOT23
SOT323
SOT23
SOT323
SOT143
SOT343
single
single
single, leadless
series
common cathode
common cathode
common anode
common anode
parallel pair
parallel pair
1.8
1.8
0.4
1.8
1.8
1.4
1.8
1.4
2
1.8
white 4
43s
FF
44s
45s
45s
46s
46s
47s
47s
*Preliminary
Jan-16-2004
2
BAS40.../BAS140W
Maximum Ratings at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
40
V
Forward current
I
F
120
mA
Non-repetitive peak surge forward current
t
10ms
I
FSM
200
Total power dissipation
BAS140W, T
S
113C
BAS40, BAS40-07, T
S
81C
BAS40-02L, T
S
127C
BAS40-04, BAS40-06, T
S
56C
BAS40-06W, T
S
106C
BAS40-05, T
S
31C
BAS40-05W, T
S
98C
BAS40-07W, T
S
118C
P
tot
250
250
250
250
250
250
250
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 125
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAS140W
BAS40, BAS40-07
BAS40-02L
BAS40-04, BAS40-06
BAS40-06W
BAS40-05
BAS40-05W
BAS40-07W
R
thJS
150
275
90
375
175
475
205
125
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Jan-16-2004
3
BAS40.../BAS140W
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 A
V
(BR)
40
-
-
V
Reverse current
V
R
= 30 V
I
R
-
-
1
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 40 mA
V
F
250
350
600
310
450
720
380
500
1000
mV
Forward voltage matching
1)
I
F
= 10 mA
V
F
-
-
20
AC Characteristics
Diode capacitance
V
R
= 0 , f = 1 MHz
C
T
-
3
5
pF
Differential forward resistance
I
F
= 10 mA, f = 10 kHz
R
F
-
10
-
Charge carrier life time
I
F
= 25 mA
rr
-
-
100
ps
1
V
F
is the difference between lowest and highest
V
F
in a multiple diode component.
Jan-16-2004
4
BAS40.../BAS140W
Diode capacitance C
T
=
(V
R
)
f = 1MHz
0
0
EHB00040
BAS 40...
C
V
R
T
1
2
3
4
pF
5
10
20
V
30
Forward resistance r
f
=
(I
F
)
f = 10 kHz
0.1
EHB00041
BAS 40...
r
f
1
10
mA
100
F
2
10
1
10
10
3
10
3
Reverse current I
R
=
(V
R
)
T
A
= Parameter
0
EHB00039
BAS 40...
V
R
R
10
0
-2
10
1
10
2
10
3
10
A
10
-1
10
20
30
V
40
T
A
= 150 C
85 C
25 C
Forward current I
F
=
(V
F
)
T
A
= Parameter
0.0
EHB00038
BAS 40...
V
F
F
0.5
1.0
V
1.5
T
A
= -40 C
25 C
85 C
150 C
-2
10
-1
10
mA
0
10
10
1
2
10
Jan-16-2004
5
BAS40.../BAS140W
Forward current I
F
=
(T
S
)
BAS140W
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
100
mA
140
I
F
Forward current I
F
=
(T
S
)
BAS40, BAS40-07
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
100
mA
140
I
F
Forward current I
F
=
(T
S
)
BAS40-02L
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
100
mA
140
I
F
Forward current I
F
=
(T
S
)
BAS40-04, BAS40-06
0
15
30
45
60
75
90 105 120 C
150
T
S
0
20
40
60
80
100
mA
140
I
F
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