Sep-04-2001
1
BAS70...
1
2
3
VPS05161
Silicon Schottky Diodes
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
BAS70-04
BAS70-05
BAS70-06
BAS70
EHA07005
1
3
2
EHA07004
1
3
2
1
3
EHA07002
EHA07006
1
3
2
Type
Marking
Pin Configuration
Package
BAS70
BAS70-04
BAS70-05
BAS70-06
73s
74s
75s
76s
1 = A
1 = A1
1 = A1
1 = C1
2 n.c.
2 = C2
2 = A2
2 = C2
3 = C
3 = C1/A2
3 = C1/C2
3 = A1/A2
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
70
V
Forward current
I
F
70
mA
Surge forward current, t
10ms
I
FSM
100
Total power dissipation
T
S
72C, BAS70
T
S
48C, BAS70-04; BAS70-06
T
S
22C , BAS70-05
P
tot
250
250
250
mW
Junction temperature
T
j
150
C
Operating temperature range
T
op
-55 ... 150
Storage temperature
T
stg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
1)
BAS70
BAS70-04; BAS70-06
BAS70-05
R
thJS
310
410
510
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
Sep-04-2001
2
BAS70...
Electrical Characteristics at T
A
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 A
V
(BR)
70
-
-
V
Reverse current
V
R
= 50 V
I
R
-
-
0.1
A
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
V
F
-
-
-
375
705
880
410
750
1000
mV
AC Characteristics
Diode capacitance-
V
R
= 0 V, f = 1 MHz
C
T
-
1.6
2
pF
Differential forward resistance
I
F
= 10 mA, f = 10 kHz
r
f
-
30
-
Charge carrier life time
I
F
= 25 mA
rr
-
-
100
ps