BAT15-099R
Nov-05-2001
1
Silicon Crossover Ring Quad Schottky Diode
Low barrier diode for double balance mixers,
phase detectors and modulators
VPS05178
2
1
3
4
EHA07012
2
4
1
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BAT15-099R
S6s
1=C1/A3 2=C2/A4 3=C3/A2 4=C4/A1 SOT143
Maximum Ratings (per Diode)
Parameter
Symbol
Value
Unit
Forward current
I
F
110
mA
Total power dissipation
, T
S
70 C
P
tot
100
mW
Operating temperature range
T
op
-55 ... 150
C
Storage temperature
T
stg
-55 ... 150
C
Thermal Resistance (per Diode)
Junction - soldering point
1)
R
thJS
780
K/W
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
BAT15-099R
Nov-05-2001
2
Electrical Characteristics at T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics (per Diode)
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
V
F
-
-
0.23
0.32
0.32
0.41
V
Forward voltage matching
1)
I
F
= 10 mA
V
F
-
-
20
mV
AC characteristics (per Diode)
Diode capacitance
V
R
= 0 V, f = 1 MHz
C
T
-
0.38
0.5
pF
Forward resistance
IF = 10mA / 50mA
R
F
-
5.5
-
1)
V
F
is the difference between the lowest and the highest
V
F
in the component.
Forward current I
F
= f (V
F
)
T
A
= Parameter
0.0
10
EHD07077
BAT 15-099R
F
F
V
10
10
10
10
A
-40 C
T
A
=
0.5
1.0
V
m
-2
-1
0
1
2
25
85
125
C
C
C
Forward current I
F
= f (T
S
)
0
15
30
45
60
75
90 105 120 C
150
T
S
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
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